Abstract: A dual-mode signal amplifying circuit includes: a first and a second input terminals for receiving differential input signals; two output terminals for providing differential output signals; a first through a third current sources; a first switch positioned between the first current source and a first node, and controlled by the first input terminal; a second switch positioned between the first current source and a second node, and controlled by the second input terminal; a third switch positioned between the first node and a fixed-voltage terminal, and controlled by a third node; a fourth switch positioned between the second node and a fixed-voltage terminal and controlled by the third node; a fifth switch positioned between the second current source and a fixed-voltage terminal, and controlled by the first node; and a sixth switch positioned between the third current source and a fixed-voltage terminal, and controlled by the second node.

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device.

Abstract: Provided is a dental dual-structured membrane. The dental dual-structured membrane according to an embodiment of the present inventive concept includes a shielding portion for shielding a bone grafting material and an alveolar bone from the outside to prevent infiltration of other tissue cells, and an insertion and fixing portion connected to the shielding portion and inserted between a gum and the alveolar bone to fix the shielding portion, in which the insertion and fixing portion has a higher tensile strength than the shielding portion.

Abstract: A method for manufacturing a power semiconductor device includes forming a drift region in a substrate, forming a trench in the drift region, forming a gate insulating layer in the trench, depositing a conductive material on the substrate, forming a gate electrode in the trench, forming a body region in the substrate, forming a highly doped source region in the body region, forming an insulating layer that covers the gate electrode, etching the insulating layer to open the body region, implanting a dopant into a portion of the body region to form a highly doped body contact region, so that the highly doped source region and the highly doped body contact region are alternately formed in the body region; and forming a source electrode on the highly doped body contact region and the highly doped source region.

Abstract: Provided is an alloy steel manufacturing method, the method including: preparing a manganese-containing first molten ferroalloy; preparing a chromium-containing second molten alloy; preparing molten steel; mixing the first molten ferroalloy and the second molten ferroalloy to manufacture third molten ferroalloy; and mix pouring the third molten ferroalloy and the molten steel to manufacture an alloy steel, wherein the phosphorous concentration in the molten steel may efficiently be controlled by reducing the converter end point temperature of the molten steel to improve a phosphorous control capacity during converter refining.

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device.

Abstract: Provided is a method for manufacturing a ring-shaped bone grafting substitute. The method for manufacturing a ring-shaped bone grafting substitute includes a biodegradable polymer providing step of providing a biodegradable polymer, a molding material providing step of providing a molding material in which the biodegradable polymer and a bone material are mixed; a molding material injection step of injecting the molding material into a ring-shaped mold such that a hole is formed in the center thereof; and ring-shaped bone grafting substitute molding step of freeze-drying the molding material having been injected into the ring-shaped mold at a temperature lower than a predetermined reference temperature, thereby molding the resultant into a ring-shaped bone grafting substitute.

Abstract: A method for manufacturing a power semiconductor device includes forming a drift region in a substrate, forming a trench in the drift region, forming a gate insulating layer in the trench, depositing a conductive material on the substrate, forming a gate electrode in the trench, forming a body region in the substrate, forming a highly doped source region in the body region, forming an insulating layer that covers the gate electrode, etching the insulating layer to open the body region, implanting a dopant into a portion of the body region to form a highly doped body contact region, so that the highly doped source region and the highly doped body contact region are alternately formed in the body region; and forming a source electrode on the highly doped body contact region and the highly doped source region.

Abstract: A method and a device for determining transmission power in a multi-antenna communication system are provided. The method for determining transmission power includes calculating the power consumption of a transmission device, calculating the capacity of the transmission device, and determining transmission power for maximizing the energy efficiency of the transmission device by using the power consumption and the capacity thereof.

Abstract: A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body region, implanting a second conductivity type impurity onto a surface of the semiconductor substrate to form a second conductivity type source region, forming an interlayer insulation film in the trench, implanting the first conductivity type impurity onto the surface of the semiconductor substrate to form a first conductivity type highly doped body contact region, exposing a portion of a side surface of the trench, and forming a source metal to be in contact with the exposed side surface of the trench.

Abstract: A receiving device comprises a first receiving circuit, for receiving a plurality of signals and comparing a plurality of signal powers of the plurality of signals with a first threshold, to generate a first plurality of comparison results; a second receiving circuit, for receiving the plurality of signals and comparing the plurality of signal powers of the plurality of signals with a second threshold, to generate a second plurality of comparison results, wherein the first threshold is smaller than the second threshold; and a control circuit, coupled to the first receiving circuit and the second receiving circuit, for determining whether an average signal power of the plurality of signals is greater than a reference power according to the first plurality of comparison results and the second plurality of comparison results, to generate a determination result.

Abstract: A suspension arm includes a ball stud including a spherical ball; a bearing in which the ball is accommodated; a housing having an inner peripheral portion, an outer peripheral portion, and a lower end portion that connects a lower end of the inner peripheral portion and a lower end of the outer peripheral portion, and configured to accommodate the ball and the bearing in a state in which the ball and the bearing are spaced apart from the inner peripheral portion; an arm body coupled to a portion of the outer peripheral portion of the housing; and an insert molding part formed on an outer peripheral portion of the bearing, the inner peripheral portion of the housing, and the lower end portion of the housing to couple the bearing with the housing. A convex-concave portion is formed on the inner peripheral portion of the housing along a circumferential direction.

Abstract: A suspension arm includes a ball stud including a spherical ball; a bearing in which the spherical ball is accommodated; a housing having an inner peripheral portion and an outer peripheral portion; an arm body coupled to the outer peripheral portion of the housing; and an insert molding part which is injected to a lower portion of the bearing and the outer peripheral portion of the housing to be coupled to the bearing, the housing, and the arm body. The housing includes a matching portion having a matching surface formed to protrude in a radially outward direction from an upper portion of the outer peripheral portion and to be brought into contact with a mold. By forming the matching portion, it is possible to reduce the volume of the housing and to reduce the weight of the suspension arm while providing the matching surface with the mold.

Abstract: A capacitor structure includes a first metal structure, a second metal structure, and a dielectric material. The second metal structure is disposed below the first metal structure. Each of the first metal structure and the second metal structure includes at least three conductive components. The conductive components have a fish-bone shape. The dielectric material is disposed in a plurality of isolators of the first metal structure, in a plurality of isolators of the second metal structure, and between the first metal structure and the second metal structure.

Abstract: The present disclosure relates to: an extended guide RNA and a composition for base editing, comprising the same; and a method for base editing and a method for producing genetically modified animals or plants, both methods using the composition for base editing.

Abstract: Provided is a method for producing steel including: preparing a first molten steel and a manganese-containing melt; supplying a nitrogen gas into a storage to blow nitrogen into the melt received in the storage and thereby adjusting a nitrogen content (wt %) in the melt to a required nitrogen content (wt %); and mixing the melt and the first molten steel to produce a second molten steel containing manganese and nitrogen. Since nitrogen is not blown while melting large amounts of solid materials, the oxidation of manganese due to a high temperature may be minimized or prevented. In addition, a large amount of solid material is not added, and a small amount of manganese-containing nonferrous metal or a FeMn ferroalloy is added, if necessary, into a produced melt in a molten state, and thus, a problem of temperature drop due to the input of the solid material may be minimized or prevented.

Abstract: A dual-mode signal amplifying circuit includes: a first and a second input terminals for receiving differential input signals; two output terminals for providing differential output signals; a first through a third current sources; a first switch positioned between the first current source and a first node, and controlled by the first input terminal; a second switch positioned between the first current source and a second node, and controlled by the second input terminal; a third switch positioned between the first node and a fixed-voltage terminal, and controlled by a third node; a fourth switch positioned between the second node and a fixed-voltage terminal and controlled by the third node; a fifth switch positioned between the second current source and a fixed-voltage terminal, and controlled by the first node; and a sixth switch positioned between the third current source and a fixed-voltage terminal, and controlled by the second node.

Abstract: When storing a molten ferroalloy or molten nonferrous metal, the molten ferroalloy or molten nonferrous metal is denitrified or prevented from absorbing nitrogen, and thus post processing such as a denitrification process may not be performed. For this, there is provided a method of producing molten manganese-containing steel, the method including: preparing a molten ferroalloy or a molten nonferrous metal; maintaining the molten ferroalloy or the molten nonferrous metal at a temperature equal to or higher than a melting point thereof; and pouring the molten ferroalloy or the molten nonferrous metal into prepared molten steel, wherein in the maintaining of the molten ferroalloy or the molten nonferrous metal, the molten ferroalloy or the molten nonferrous metal is subjected to a nitrogen-absorption prevention process or a denitrification process.

Abstract: A semiconductor device includes a substrate and a source metal formed on the substrate. A gate pad is formed on the substrate adjacent to the source metal. A gate metal is formed on the substrate and surrounds the gate pad and the source metal. A first diode is formed between the gate metal and the source metal.

Abstract: A dual-mode signal amplifying circuit includes: a first and a second input terminals for receiving differential input signals; two output terminals for providing differential output signals; a first through a third current sources; a first switch positioned between the first current source and a first node, and controlled by the first input terminal; a second switch positioned between the first current source and a second node, and controlled by the second input terminal; a third switch positioned between the first node and a fixed-voltage terminal, and controlled by a third node; a fourth switch positioned between the second node and a fixed-voltage terminal, and controlled by the third node; a fifth switch positioned between the second current source and a fixed-voltage terminal, and controlled by the first node; and a sixth switch positioned between the third current source and a fixed-voltage terminal, and controlled by the second node.