Abstract: A dual-mode signal amplifying circuit includes: a first and a second input terminals for receiving differential input signals; two output terminals for providing differential output signals; a first through a third current sources; a first switch positioned between the first current source and a first node, and controlled by the first input terminal; a second switch positioned between the first current source and a second node, and controlled by the second input terminal; a third switch positioned between the first node and a fixed-voltage terminal, and controlled by a third node; a fourth switch positioned between the second node and a fixed-voltage terminal and controlled by the third node; a fifth switch positioned between the second current source and a fixed-voltage terminal, and controlled by the first node; and a sixth switch positioned between the third current source and a fixed-voltage terminal, and controlled by the second node.

Abstract: When storing a molten ferroalloy or molten nonferrous metal, the molten ferroalloy or molten nonferrous metal is denitrified or prevented from absorbing nitrogen, and thus post processing such as a denitrification process may not be performed. For this, there is provided a method of producing molten manganese-containing steel, the method including: preparing a molten ferroalloy or a molten nonferrous metal; maintaining the molten ferroalloy or the molten nonferrous metal at a temperature equal to or higher than a melting point thereof; and pouring the molten ferroalloy or the molten nonferrous metal into prepared molten steel, wherein in the maintaining of the molten ferroalloy or the molten nonferrous metal, the molten ferroalloy or the molten nonferrous metal is subjected to a nitrogen-absorption prevention process or a denitrification process.

Abstract: A semiconductor device includes a substrate and a source metal formed on the substrate. A gate pad is formed on the substrate adjacent to the source metal. A gate metal is formed on the substrate and surrounds the gate pad and the source metal. A first diode is formed between the gate metal and the source metal.

Abstract: A dual-mode signal amplifying circuit includes: a first and a second input terminals for receiving differential input signals; two output terminals for providing differential output signals; a first through a third current sources; a first switch positioned between the first current source and a first node, and controlled by the first input terminal; a second switch positioned between the first current source and a second node, and controlled by the second input terminal; a third switch positioned between the first node and a fixed-voltage terminal, and controlled by a third node; a fourth switch positioned between the second node and a fixed-voltage terminal, and controlled by the third node; a fifth switch positioned between the second current source and a fixed-voltage terminal, and controlled by the first node; and a sixth switch positioned between the third current source and a fixed-voltage terminal, and controlled by the second node.

Abstract: A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body region, implanting a second conductivity type impurity onto a surface of the semiconductor substrate to form a second conductivity type source region, forming an interlayer insulation film in the trench, implanting the first conductivity type impurity onto the surface of the semiconductor substrate to form a first conductivity type highly doped body contact region, exposing a portion of a side surface of the trench, and forming a source metal to be in contact with the exposed side surface of the trench.

Abstract: A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body region, implanting a second conductivity type impurity onto a surface of the semiconductor substrate to form a second conductivity type source region, forming an interlayer insulation film in the trench, implanting the first conductivity type impurity onto the surface of the semiconductor substrate to form a first conductivity type highly doped body contact region, exposing a portion of a side surface of the trench, and forming a source metal to be in contact with the exposed side surface of the trench.

Abstract: The objective of one aspect of the present invention is to provide: a thick steel plate having high strength and high toughness without carrying out accelerated cooling using water cooling, in the manufacturing, by means of a thermomechanical control process (TMCP), of a thick steel having a thickness of 15 mmt and over; and a method for manufacturing the same.

Abstract: Disclosed herein are a video interpretation apparatus and method. The video interpretation apparatus includes an object information generation unit for generating object information based on objects in an input video, a relation generation unit for generating a dynamic spatial relation between the objects based on the object information, a general event information generation unit for generating general event information based on the dynamic spatial relation, a video information generation unit for generating video information including any one of a sentence and an event description based on the object information and the general event information, and a video descriptor storage unit for storing the object information, the general event information, and the video information.

Abstract: The purpose of one aspect of the present invention is to provide: a thick steel plate capable of removing a conventional normalizing treatment required for ensuring toughness low temperature and cryogenic environments, and having properties equal to or better than those of a conventional steel subjected to the normalizing treatment; and a method for manufacturing the method.

Abstract: Provided is a dephosphorizing flux configured to adjust a phosphorous component contained in molten steel, the dephosphorizing flux includes a main material including BaCO3 and a supplementary material, wherein the supplementary material includes a first material containing either of NaHCO3 or Na2CO3 and a second material containing CaF2. Thus, in accordance with a dephosphorizing flux and a method for preparing the same of the present disclosure, the plugging of a lower blowing nozzle that blows a carrier gas during dephosphorization may be prevented while improving a dephosphorization ratio. In addition, since environment polluting substances are not used as in conventional arts, environment pollution risk may be reduced, and the cost burden due to the facility for pollution prevention and harmful substance management may be alleviated.

Abstract: A hydraulic disc brake device includes a cover, a hydraulic unit, an oil tube and a disc brake unit. The cover includes at least one accommodating space, at least one oil route, a proximal end and a distal end. The distal end towards a moving direction of the bicycle. The hydraulic unit includes a hydraulic cylinder and a piston. The hydraulic cylinder is assembled in the accommodating space. The piston is assembled in the hydraulic cylinder for controlling a pressure of the oil route. The disc brake unit is connected with the oil tube and controlled by a pressure of the oil tube.

Abstract: A method for manufacturing a power semiconductor device includes forming a trench in a semiconductor substrate, forming a gate insulation film and a gate electrode in the trench, implanting a first conductivity type impurity into the semiconductor substrate to form a first conductivity type body region, implanting a second conductivity type impurity onto a surface of the semiconductor substrate to form a second conductivity type source region, forming an interlayer insulation film in the trench, implanting the first conductivity type impurity onto the surface of the semiconductor substrate to form a first conductivity type highly doped body contact region, exposing a portion of a side surface of the trench, and forming a source metal to be in contact with the exposed side surface of the trench.

Abstract: Provided is a method for producing alloy steel, the method comprising producing first alloy steel in a temperature holding furnace; maintaining the first alloy steel at a temperature of no lower than a melting point in the temperature holding furnace; and producing second alloy steel having an alloy content lower than the alloy content in the first alloy steel by melt mixing of the first alloy steel and molten steel. In the producing of the alloy steel, melting and storing of the ferroalloy are continuously performed, and thus, the temperature drop of the ferroalloy may be suppressed or prevented.

Abstract: Disclosed is a spheroid forming culture container using a temperature-sensitive glycol chitosan derivative and a spheroid forming method using the same. In the disclosed spheroid forming culture container, a surface of a culturing space is coated with a glycol chitosan derivative having reversible sol-gel transition characteristic depending on temperature.

Abstract: A receiving device comprises a first receiving circuit, for receiving a plurality of signals and comparing a plurality of signal powers of the plurality of signals with a first threshold, to generate a first plurality of comparison results; a second receiving circuit, for receiving the plurality of signals and comparing the plurality of signal powers of the plurality of signals with a second threshold, to generate a second plurality of comparison results, wherein the first threshold is smaller than the second threshold; and a control circuit, coupled to the first receiving circuit and the second receiving circuit, for determining whether an average signal power of the plurality of signals is greater than a reference power according to the first plurality of comparison results and the second plurality of comparison results, to generate a determination result.

Abstract: The present invention relates to an anti-coking catalyst having a physical property of reducing coke formation, which comprises a solid acid catalyst containing gadolinium (Gd) on the surface, a preparation method thereof, and a use thereof. The preparation method includes a first step of determining the amount of gadolinium (Gd) or a Gd-providing precursor to be used relative to the total weight of the solid acid catalyst, which reducing the coking of a specific solid acid catalyst below a specific level under a specific reaction condition; and a second step of preparing a Gd-containing solid acid catalyst using the amount determined in the first step. The catalyst according to the present invention is a catalyst in which an appropriate weight ratio of gadolinium is supported on the surface of a pure solid acid substance or solid acid substance on which a specific metal is supported.

Abstract: A dual-mode signal amplifying circuit includes: a first and a second input terminals for receiving differential input signals; two output terminals for providing differential output signals; a first through a third current sources; a first switch positioned between the first current source and a first node, and controlled by the first input terminal; a second switch positioned between the first current source and a second node, and controlled by the second input terminal; a third switch positioned between the first node and a fixed-voltage terminal, and controlled by a third node; a fourth switch positioned between the second node and a fixed-voltage terminal, and controlled by the third node; a fifth switch positioned between the second current source and a fixed-voltage terminal, and controlled by the first node; and a sixth switch positioned between the third current source and a fixed-voltage terminal, and controlled by the second node.

Abstract: Disclosed herein are a query input apparatus and method. The query input apparatus includes: an input unit providing a graphic user interface (GUI) to receive a schematized composite activity that a user wants to search from the user; and a processing unit generating a query using an activity descriptor corresponding to the schematized composite activity depending on a query request from an activity searching system and transferring the generated query to the activity searching system.

Abstract: Disclosed is a method for directly synthesizing monocyclic aromatic compounds and long-chain olefin compounds from a carbon dioxide-rich synthetic gas and, specifically, a method for directly synthesizing monocyclic aromatic compounds and long-chain olefin compounds from a carbon dioxide-rich synthetic gas, the method comprising a step of preparing a C1-C15 short-chain hydrocarbon by Fischer-Tropsch (FT) synthesis and a step of preparing monocyclic aromatic compounds and long-chain olefin compounds by dehydrogenating the short-chain hydrocarbon products, and maximizing the yield of the short-chain hydrocarbon by using, as a synthetic gas to be used in FT synthesis, a carbon dioxide-rich synthetic gas in which the molar ratio of hydrogen, carbon monoxide and carbon dioxide is delimited to a specific range, and maximizing the yield of the monocyclic aromatic compounds or the long-chain olefin compounds by specifying the composition of a catalyst to be used in the dehydrogenation and the temperature and pressure