Abstract: A method for preparing a COF-protected electrode and an electrode are provided. The method includes mixing an organic framework, a small molecular organic acid and a solvent, adding a polar aqueous solution containing a substrate thereto, mixing the above uniformly and heating the system at a low temperature under an inert atmosphere, filtering the solution to obtain precipitates, washing and drying the precipitates to obtain a COF film grown on a surface of the substrate; coating a protective layer on the COF film to obtain a substrate/COF/protective layer film; etching off the substrate to obtain a COF/protective layer film; and transferring the COF/protective layer film to a surface of the electrode, and removing the protective layer.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: The present utility model relates to a device for improving gas detection in a photoionization detector. A gas detector is provided. The device reduces interference of photoelectric noise on the reading of the gas detector for target gases such as volatile organic compounds.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: Systems and methods for frequency management, including: an online media service configured to: receive a request for a media item, the request including a recipient identifier; identify a set of candidate media items ranked by a set of matching criteria; a frequency management service configured to: perform a query against a lookup service, where the query includes (i) an entity identifier of at least one candidate media item of the set of candidate media items, and (ii) the recipient identifier; receive a response from the lookup service including a quantity of impressions associated with the entity identifier and the recipient identifier; identify a predefined frequency threshold; determine that the frequency threshold is exceeded and exclude the at least one candidate media item from a result set based on the determination; and provide the result set including an identifier of at least one other candidate media item.

Abstract: An electrical connector includes at least one electrical module. The electrical module includes: an insulating body, where multiple first accommodating slots are concavely provided on a first side toward a second side of the insulating body; multiple first terminal assemblies, respectively accommodated in the corresponding first accommodating slots; and a first grounding member, having multiple first spokes and multiple second spokes. Each first terminal assembly includes a first insulating block, a pair of first signal terminals, and a first shielding shell. Each first shielding shell has a first shielding side surface exposed to the first side. Each first spoke is in mechanical contact with the first shielding shells of a same electrical module, and each second spoke is in contact with the first shielding side surface of the corresponding first shielding shell, thus achieving conduction between the first shielding shells and the first grounding member.

Abstract: Provided is a node diaphragm scraping and sorting device for a bamboo split, which is configured to scrape node diaphragms of the bamboo splits and to sequentially sort the bamboo inner layers and bamboo outer layers of the bamboo splits towards the same direction. The device includes a scraping device, a sorting device and a clamping and conveying device which are arranged from front to back along an axis. The scraping device includes a conical cylinder, two pressing semi-rings, and a scraping ring. The sorting device includes an e-shaped sleeve composed of an inner cylinder and an outer cylinder, and two shifting forks located at both ends of the sleeve. The clamping and conveying device includes an inner ring moving on the axis, two clamping semi-rings and a conveying power device. The structure, function and technical parameters of each branch device are also introduced in detail.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.

Abstract: An embodiment of this application provides a method and apparatus for testing control software, and a computer-readable storage medium to reduce the time consumed in the simulation-based debugging and enhance efficiency. The method may include obtaining test information of a plurality of fault signals; and injecting, based on the test information of the plurality of fault signals, the plurality of fault signals into a simulation environment in sequence to obtain test results of the plurality of fault signals handled by the control software, where the simulation environment may be a simulation environment of a control object of the control software.

Abstract: The present disclosure discloses an atmospheric-pressure plasma equipment for fabric functional finishing and its application, and belongs to the field of textile printing and dyeing engineering. The atmospheric-pressure plasma equipment, including a discharging system, a grafting instrument and a cloth guider, can conduct continuous plasma treatment on fabrics under an atmospheric pressure, including plasma etching and plasma grafting, which breaks through the disadvantage of batch processing of vacuum plasma equipment. The equipment and method of the present disclosure realize functional finishing of the fabrics in the absence of water, and this finishing process is cost efficient, environmentally friendly, uniform, shorter treatment time and higher reactivity, and applicable to many materials and can keep the bulk properties of the treated substances.

Abstract: Examples of an integrated circuit with FinFET devices and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate, a fin extending from the substrate, a gate disposed on a first side of the fin, and a gate spacer disposed alongside the gate. The gate spacer has a first portion extending along the gate that has a first width and a second portion extending above the first gate that has a second width that is greater than the first width. In some such examples, the second portion of the gate spacer includes a gate spacer layer disposed on the gate.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: Disclosed are compounds of Formula I, methods of using the compounds for inhibiting KRAS activity and pharmaceutical compositions comprising such compounds. The compounds are useful in treating, preventing or ameliorating diseases or disorders associated with KRAS activity such as cancer.

Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).

Abstract: A voltage tracking circuit is provided. The voltage tracking circuit includes first and second P-type transistors and a control circuit. The drain of the first P-type transistor is coupled to a first voltage terminal. The gate and the drain of the second P-type transistor are respectively coupled to the first voltage terminal and a second voltage terminal. The control circuit is coupled to the first and second voltage terminals and generates a control voltage according to the first voltage and the second voltage. The sources of the first and second P-type transistors are coupled to an output terminal of the voltage tracking circuit, and the output voltage is generated at the output terminal. In response to the second voltage being higher than the first voltage, the control circuit generates the control signal to turn off the first P-type transistor.

Abstract: An integrated circuit (IC) device includes a substrate and a circuit region over the substrate. The circuit region includes at least one active region extending along a first direction, at least one gate region extending across the at least one active region and along a second direction transverse to the first direction, and at least one first input/output (IO) pattern configured to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first IO pattern extends along a third direction oblique to both the first direction and the second direction.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: An axial flux motor includes a rotor assembly and a stator assembly. The rotor assembly has magnets. The stator assembly has a circuit substrate, segmented iron cores, and a coil. The circuit substrate extends radially. The segmented iron cores are supported on the circuit substrate to be opposite to the magnet in the axial direction. Segmented iron cores arranged in the circumferential direction. A coil is sleeved on a segmented iron core. Holding seats of an insulating material correspond respectively to the segmented iron cores. A holding seat abuts with and covers a segmented iron core from both axial sides and the circumferential direction, and is used for winding the coil. The circuit substrate has slot holes. A slot hole is used for embedding and positioning a portion of a holding seat that protrudes more towards one axial side than the coil.