Patents by Inventor Chang Youn Kim
Chang Youn Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8624287Abstract: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.Type: GrantFiled: January 30, 2013Date of Patent: January 7, 2014Assignee: Seoul Opto Device Co., Ltd.Inventors: Sum Geun Lee, Jong Kyu Kim, Chang Youn Kim, Jin Cheol Shin
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Patent number: 8624159Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.Type: GrantFiled: March 2, 2012Date of Patent: January 7, 2014Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hwa Mok Kim
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Patent number: 8618565Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.Type: GrantFiled: January 7, 2011Date of Patent: December 31, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
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Patent number: 8609449Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: October 25, 2012Date of Patent: December 17, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Publication number: 20130292645Abstract: Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.Type: ApplicationFiled: December 6, 2011Publication date: November 7, 2013Applicant: Seoul Opto Device Co., Ltd.Inventors: Jun Ho Yun, Ki Bum Nam, Joon Hee Lee, Chang Youn Kim, Hong Jae Yoo, Sung Hoon Hong
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Patent number: 8481636Abstract: Provided is a polyolefin resin composition including: an ultra-high crystalline polypropylene resin, e.g. about 40-80 wt %, having an isotactic index of about 99.5 or higher; a branched polypropylene, e.g., about 10-20 wt %, having a branching index of about 7 or higher; a thermoplastic elastomer, e.g., about 1-20 wt %; an inorganic filler, e.g., about 1-30 wt %; and a fluoroacrylic copolymer-based amide polymer compound, e.g., about 2-6 wt %.Type: GrantFiled: March 4, 2011Date of Patent: July 9, 2013Assignees: Hyundai Motor Company, Honam Petrochemical CorporationInventors: Dae Sik Kim, Seok Hwan Kim, Jung Gyun Noh, Sung Min Cho, Seung Wook Park, Tae Sik Moon, Chang Youn Kim
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Patent number: 8410506Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.Type: GrantFiled: March 31, 2011Date of Patent: April 2, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
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Patent number: 8395166Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.Type: GrantFiled: December 24, 2008Date of Patent: March 12, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Won Cheol Seo, Chang Youn Kim, Yeo Jin Yoon
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Patent number: 8383433Abstract: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.Type: GrantFiled: April 5, 2011Date of Patent: February 26, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Sum Geun Lee, Jin Cheol Shin, Jong Kyu Kim, Chang Youn Kim
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Patent number: 8329488Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: April 10, 2012Date of Patent: December 11, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Patent number: 8288781Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: GrantFiled: September 30, 2009Date of Patent: October 16, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheul Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
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Patent number: 8242530Abstract: There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.Type: GrantFiled: March 30, 2011Date of Patent: August 14, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Won Cheol Seo, Yun Goo Kim, Chang Youn Kim
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Publication number: 20120202306Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: ApplicationFiled: April 10, 2012Publication date: August 9, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Shiro SAKAI, Hwa Mok KIM, Joon Hee LEE, Soo Young MOON, Kyoung Wan KIM
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Publication number: 20120160817Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.Type: ApplicationFiled: March 2, 2012Publication date: June 28, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hwa Mok KIM
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Publication number: 20120136104Abstract: Provided is a polyolefin resin composition including: an ultra-high crystalline polypropylene resin, e.g. about 40-80 wt %, having an isotactic index of about 99.5 or higher; a branched polypropylene, e.g., about 10-20 wt %, having a branching index of about 7 or higher; a thermoplastic elastomer, e.g., about 1-20 wt %; an inorganic filler, e.g., about 1-30 wt %; and a fluoroacrylic copolymer-based amide polymer compound, e.g., about 2-6 wt %.Type: ApplicationFiled: March 4, 2011Publication date: May 31, 2012Applicants: HONAM PETROCHEMICAL CORPORATION, HYUNDAI MOTOR COMPANYInventors: Dae Sik Kim, Seok Hwan Kim, Jung Gyun Noh, Sung Min Cho, Seung Wook Park, Tae Sik Moon, Chang Youn Kim
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Publication number: 20120135551Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.Type: ApplicationFiled: February 7, 2012Publication date: May 31, 2012Applicant: Seoul Opto Device Co., Ltd.Inventors: Won Cheol SEO, Chang Youn KIM, Yeo Jin YOON
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Patent number: 8183075Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: July 21, 2011Date of Patent: May 22, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Patent number: 8153509Abstract: Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.Type: GrantFiled: January 26, 2010Date of Patent: April 10, 2012Assignee: Seoul Opto Device Co., ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hwa Mok Kim
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Publication number: 20120080695Abstract: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.Type: ApplicationFiled: April 5, 2011Publication date: April 5, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Sum Geun Lee, Jin Cheol Shin, Jong Kyu Kim, Chang Youn Kim
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Publication number: 20120021546Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: ApplicationFiled: July 21, 2011Publication date: January 26, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim