Patents by Inventor Chang Youn Kim
Chang Youn Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110316026Abstract: An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.Type: ApplicationFiled: May 2, 2011Publication date: December 29, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM, Hwa Mok KIM
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Publication number: 20110297972Abstract: A light emitting device having a plurality of light emitting cells is disclosed.Type: ApplicationFiled: March 24, 2010Publication date: December 8, 2011Applicant: SEOUL SEMICONDUCTOR CO., LTD.Inventors: Won Cheol Seo, Dae Sung Kal, Joon Hee Lee, Chang Youn Kim
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Publication number: 20110241045Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: ApplicationFiled: February 1, 2011Publication date: October 6, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Kyung Hee YE, Chang Youn KIM, Jin Cheol SHIN, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM
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Publication number: 20110241050Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: ApplicationFiled: March 31, 2011Publication date: October 6, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Kyung Hee YE, Chang Youn KIM, Jin Cheol SHIN, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM
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Patent number: 8026119Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: August 26, 2010Date of Patent: September 27, 2011Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Publication number: 20110227114Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.Type: ApplicationFiled: March 31, 2011Publication date: September 22, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM
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Publication number: 20110227109Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.Type: ApplicationFiled: January 7, 2011Publication date: September 22, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hong Chol LIM
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Publication number: 20110175131Abstract: There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.Type: ApplicationFiled: March 30, 2011Publication date: July 21, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Won Cheol SEO, Yun Goo KIM, Chang Youn KIM
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Patent number: 7982234Abstract: There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.Type: GrantFiled: July 6, 2009Date of Patent: July 19, 2011Assignee: Seoul Opto Device Co., Ltd.Inventors: Won Cheol Seo, Yun Goo Kim, Chang Youn Kim
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Publication number: 20110169040Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: ApplicationFiled: March 28, 2011Publication date: July 14, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Won Cheol SEO, Joon Hee LEE, Jong Kyun YOU, Chang Youn KIM, Jin Cheul SHIN, Hwa Mok KIM, Jang Woo LEE, Yeo Jin YOON, Jong Kyu KIM
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Publication number: 20110053303Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: ApplicationFiled: August 26, 2010Publication date: March 3, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Publication number: 20110053302Abstract: Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.Type: ApplicationFiled: January 26, 2010Publication date: March 3, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hwa Mok Kim
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Publication number: 20100289040Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.Type: ApplicationFiled: December 24, 2008Publication date: November 18, 2010Applicant: Seoul Opto Device Co., Ltd.Inventors: Won Cheol Seo, Chang Youn Kim, Yeo Jin Yoon
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Publication number: 20100078656Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: ApplicationFiled: September 30, 2009Publication date: April 1, 2010Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Won Cheol SEO, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheul Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
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Publication number: 20100006881Abstract: There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.Type: ApplicationFiled: July 6, 2009Publication date: January 14, 2010Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Won Cheol SEO, Yun Goo KIM, Chang Youn KIM