Patents by Inventor Chao-Hsun Lin

Chao-Hsun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060290252
    Abstract: The present invention provides an electron amplification plate placed between a first substrate and a second substrate of a field emission display device. The electron amplification plate comprises at least two insulating layers for electrical insulation; and at least one conductive electrode layer having plural apertures, wherein the conductive electrode layer is sandwiched between the insulating layers. The surface of the inner wall of the apertures is coated with an electron-amplifying material for multiplying the quantity of electrons as the surface is impacted. The inner wall of each aperture comprises an upper concave wall and a lower concave wall, and the lower concave wall is used for collecting electrons, and the upper concave wall is used for focusing electrons. Thereby, the electron beam emitted from the emitters can be effectively amplified, and color purity of the field emission display device is high.
    Type: Application
    Filed: June 20, 2006
    Publication date: December 28, 2006
    Applicants: Tatung Company, Industrial Technology Research Institute
    Inventors: Chi-Tsung Lo, Tzung-Han Yang, Jeng-Maw Chiou, Shy-Wen Lai, Cheng-Feng Lin, Chao-Hsun Lin
  • Publication number: 20040142560
    Abstract: A method of selective growth of carbon nano-structures on silicon substrates, comprising definition of the predetermined area on Si substrates to be grown carbon nano-structures, formation of metal-silicides on the predetermined area on the said Si substrates to be grown carbon nano-structures, and growth of carbon nano-structures on the said metal-silicides by chemical vapor deposition method. Locations of the said metal-silicides on the said Si substrates are growth area of the nano-structures, whereby function of selective growth of carbon nano-structures on Si substrates can be achieved. Besides, the said metal-silicides area is manufactured by semiconductor processes, and is directly compatible with IC processes.
    Type: Application
    Filed: January 17, 2003
    Publication date: July 22, 2004
    Inventors: Cheng-Tzu Kuo, Hui-Lin Chang, Chao-Hsun Lin, Chih-Ming Hsu
  • Publication number: 20040131795
    Abstract: The present invention provides a method to control the magnetic alloy-encapsulated carbon-base nanostructures apply an appropriate amount of magnetic field during magnetic alloy-encapsulated nanostructure deposition and post treatment for improved magnetic anisotropy by electron cyclotron resonance chemical vapor deposition (ECR-CVD), the catalyst and additive on surface of substrate use DC bias and heating treatment and then etching the substrate during plasma pretreatment. The present invention is to provide control of the size and shape of the nanostructures, capability to be effectively manipulated the magnetic anisotropy and coercive force of the encapsulated magnetic nanoparticles, capability to store the magnetic signals with nano-resolution.
    Type: Application
    Filed: November 25, 2003
    Publication date: July 8, 2004
    Applicant: National Chiao Tung University
    Inventors: Cheng-Tzu Kuo, Chao-Hsun Lin, An-Ya Lo, Po-Yuan Lo