Patents by Inventor Chao-Yang Chen
Chao-Yang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240153824Abstract: A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate under the recess is covered at least by a bottommost sacrificial layer of the stack. The method also includes forming inner spacers on terminal ends of the sacrificial layers that are above the bottommost sacrificial layer, depositing an undoped layer in the recess, and forming a doped epitaxial feature over the undoped layer. The undoped layer covers terminal ends of a bottommost channel layer of the stack. The doped epitaxial feature covers terminal ends of the channel layers that are above the bottommost channel layer.Type: ApplicationFiled: March 22, 2023Publication date: May 9, 2024Inventors: Ting-Yeh CHEN, Wei-Yang LEE, Po-Cheng WANG, De-Fang CHEN, Chao-Cheng CHEN
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Patent number: 11942510Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emittinType: GrantFiled: July 27, 2022Date of Patent: March 26, 2024Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Chi-Shiang Hsu, Yong-Yang Chen
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Publication number: 20230255124Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip. The method includes forming a reactivity reducing coating over one or more lower interconnect layers disposed over a substrate. A bottom electrode layer is formed on and in contact with the reactivity reducing coating. The bottom electrode layer has a first electronegativity that is less than or equal to a second electronegativity of the reactivity reducing coating. A data storage element is formed over the bottom electrode layer and a top electrode layer is formed over the data storage element. The top electrode layer, the data storage element, the reactivity reducing coating, and the bottom electrode layer are patterned to define a memory device.Type: ApplicationFiled: April 14, 2023Publication date: August 10, 2023Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu
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Patent number: 11696521Abstract: Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and/or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset/failure bit is reduced.Type: GrantFiled: July 27, 2020Date of Patent: July 4, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Cheng-Jun Wu
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Publication number: 20230197847Abstract: The present disclosure relates to a method for forming a ferroelectric memory device. The method includes forming a dielectric layer over a semiconductor substrate and forming a first conductive layer over the dielectric layer. The first conductive layer has a first overall electronegativity. A ferroelectric layer is formed on the first conductive layer. The ferroelectric layer has a second overall electronegativity less than or equal to the first overall electronegativity. A second conductive layer is formed on the ferroelectric layer. The second conductive layer has a third overall electronegativity greater than or equal to the second overall electronegativity. The second conductive layer, the ferroelectric layer, and the first conductive layer are etched to form a polarization switching structure. An ILD layer is formed over the polarization switching structure, and a planarization process is performed on the ILD layer. A first conductive via is formed over the polarization switching structure.Type: ApplicationFiled: February 23, 2023Publication date: June 22, 2023Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen
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Publication number: 20230187426Abstract: An integrated circuit layout and an integrated circuit layout method for a filter are provided. The method includes: determining a structure of a target filter circuit that includes a capacitor and a first optional component; reserving a first circuit region; disposing the first optional component in the first circuit region, and electrically connecting the first optional component, through a plurality of first wires located in a first metal layer, to a plurality of first external nodes that are outside the first circuit region; electrically connecting the plurality of first external nodes to a plurality of second wires located in a second metal layer, respectively, in which the second wires are disposed around the first circuit region; and disposing the capacitor in the first circuit region and above the first optional component.Type: ApplicationFiled: December 6, 2022Publication date: June 15, 2023Inventors: CHIA-WEI YU, YUNG-TAI CHEN, CHAO-YANG CHEN, SHENG-YANG HO
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Publication number: 20230148003Abstract: A memory device and a method of manufacturing the same are provided. The memory device includes a substrate, a memory cell array, and a memory cell interconnection structure. The memory cell array is disposed on the substrate and includes a plurality of memory cells. Each of the plurality of memory cells includes a transistor unit and a memory unit that are electrically connected to each other. The memory cell interconnection structure is disposed on the substrate, and is configured to establish an electrical connection between the plurality of memory cells. A plurality of source lines are embedded in a dielectric layer that directly covers the substrate. Each of the plurality of source lines is disposed on the substrate, and comes in direct contact with a source region of a corresponding one of the transistor units.Type: ApplicationFiled: November 2, 2022Publication date: May 11, 2023Inventors: CHAO-YANG CHEN, CHIH-JEN HUANG
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Publication number: 20230143211Abstract: A memory device and a method of manufacturing the same are provided. The memory device includes a substrate, a memory cell array, and a memory cell interconnection structure. The memory cell array is disposed on the substrate. Each memory cell in the memory cell array includes a transistor unit and a memory unit that are electrically connected to each other. The memory cell interconnection structure is configured to establish an electrical connection between the memory cells, and includes a dielectric layer and a plurality of drain conductive structures. At least one drain conductive pillar includes a first contact portion and a second contact portion that are connected to each other and embedded in the dielectric layer. One side surface of the first contact portion is recessed along a first direction with respect to one side surface of the second contact portion, so as to form a stepped structure.Type: ApplicationFiled: October 28, 2022Publication date: May 11, 2023Inventors: CHAO-YANG CHEN, CHIH-JEN HUANG
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Patent number: 11631810Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnects arranged within a dielectric structure over a substrate. A bottom electrode is disposed over one of the one or more lower interconnects. The bottom electrode includes a first material having a first electronegativity. A data storage layer separates the bottom electrode from a top electrode. The bottom electrode is between the data storage layer and the substrate. A reactivity reducing layer includes a second material and has a second electronegativity that is greater than or equal to the first electronegativity. The second material contacts a lower surface of the bottom electrode that faces the substrate.Type: GrantFiled: April 19, 2021Date of Patent: April 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu
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Patent number: 11594632Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.Type: GrantFiled: December 10, 2020Date of Patent: February 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen
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Patent number: 11574684Abstract: The present invention relates to a dynamic random access memory and a programming method therefor with two stages. In a first stage, a capacitor of a memory cell of the dynamic random access memory is broken down, so that the dynamic random access memory becomes a one-time programmable memory. In a second stage, a resistance of the capacitor that is broken down is reduced, so that state data of the memory cell can be more easily interpreted.Type: GrantFiled: April 26, 2021Date of Patent: February 7, 2023Assignee: NS Poles Technology Corp.Inventors: Chao Yang Chen, Ming Sheng Tung
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Publication number: 20220384724Abstract: Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and/or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset/failure bit is reduced.Type: ApplicationFiled: August 4, 2022Publication date: December 1, 2022Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Cheng-Jun Wu
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Publication number: 20220215884Abstract: The present invention relates to a dynamic random access memory and a programming method therefor with two stages. In a first stage, a capacitor of a memory cell of the dynamic random access memory is broken down, so that the dynamic random access memory becomes a one-time programmable memory. In a second stage, a resistance of the capacitor that is broken down is reduced, so that state data of the memory cell can be more easily interpreted.Type: ApplicationFiled: April 26, 2021Publication date: July 7, 2022Inventors: CHAO YANG CHEN, MING SHENG TUNG
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Patent number: 11107528Abstract: In some embodiments, the present disclosure relates to a method, comprising the performing of a reset operation to a resistive random access memory (RRAM) cell. A first voltage bias having a first polarity is applied to the RRAM cell. An absolute value of the first voltage bias is greater than an absolute value of a first reset voltage. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance greater than the low resistance. A second voltage bias having a second polarity oppose to the first polarity is then applied to the RRAM cell. An absolute value of the second reset voltage is less than an absolute value of the second voltage bias and less than the absolute value of the first reset voltage. The application of the second voltage bias induces the RRAM cell to have a high resistance.Type: GrantFiled: October 28, 2020Date of Patent: August 31, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Yang Chen, Cheng-Jun Wu, Chun-Yang Tsai, Kuo-Ching Huang
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Publication number: 20210242400Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnects arranged within a dielectric structure over a substrate. A bottom electrode is disposed over one of the one or more lower interconnects. The bottom electrode includes a first material having a first electronegativity. A data storage layer separates the bottom electrode from a top electrode. The bottom electrode is between the data storage layer and the substrate. A reactivity reducing layer includes a second material and has a second electronegativity that is greater than or equal to the first electronegativity. The second material contacts a lower surface of the bottom electrode that faces the substrate.Type: ApplicationFiled: April 19, 2021Publication date: August 5, 2021Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu
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Publication number: 20210135105Abstract: Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and/or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset/failure bit is reduced.Type: ApplicationFiled: July 27, 2020Publication date: May 6, 2021Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Cheng-Jun Wu
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Patent number: 10985316Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnect layers arranged within a dielectric structure over a substrate. A bottom electrode is disposed over one of the one or more lower interconnect layers. A lower surface of the bottom electrode includes a material having a first electronegativity. A data storage layer separates the bottom electrode from a top electrode. A reactivity reducing layer contacts the lower surface of the bottom electrode. The reactivity reducing layer has a second electronegativity that is greater than or equal to the first electronegativity.Type: GrantFiled: March 20, 2019Date of Patent: April 20, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chao-Yang Chen, Chun-Yang Tsai, Kuo-Ching Huang, Wen-Ting Chu, Pili Huang, Cheng-Jun Wu
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Publication number: 20210098630Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.Type: ApplicationFiled: December 10, 2020Publication date: April 1, 2021Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen
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Publication number: 20210043257Abstract: In some embodiments, the present disclosure relates to a method, comprising the performing of a reset operation to a resistive random access memory (RRAM) cell. A first voltage bias having a first polarity is applied to the RRAM cell. An absolute value of the first voltage bias is greater than an absolute value of a first reset voltage. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance greater than the low resistance. A second voltage bias having a second polarity oppose to the first polarity is then applied to the RRAM cell. An absolute value of the second reset voltage is less than an absolute value of the second voltage bias and less than the absolute value of the first reset voltage. The application of the second voltage bias induces the RRAM cell to have a high resistance.Type: ApplicationFiled: October 28, 2020Publication date: February 11, 2021Inventors: Chao-Yang Chen, Cheng-Jun Wu, Chun-Yang Tsai, Kuo-Ching Huang
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Patent number: 10879391Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.Type: GrantFiled: May 7, 2019Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen