Abstract: For example, an Access Point (AP) may be configured to identify a Trigger-Based (TB) sensing measurement exchange of a Wireless Local Area Network (WLAN) sensing procedure to be initiated by the AP. For example, the AP may be configured to determine that a non-AP Multi-Link Device (MLD) at an Enhanced Multi-Link Single Radio (EMLSR) operation mode is to participate as a sensing responder of the TB sensing measurement exchange. For example, the AP may be configured to transmit an Initial Control Frame (ICF) addressed to the non-AP MLD prior to initiating the TB sensing measurement exchange, for example, based on the determination that the non-AP MLD at the EMLSR operation mode is to participate as a sensing responder of the TB sensing measurement exchange.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The method includes forming a first dielectric feature between first and the second fin structures, wherein each first and second fin structure includes first semiconductor layers and second semiconductor layers alternatingly stacked and in contact with the first dielectric layer. The method also includes removing the second semiconductor layers so that the first semiconductor layers of the first and second fin structures extend laterally from a first side and a second side of the first dielectric feature, respectively, trimming the first dielectric feature so that the first dielectric feature has a reduced thickness on both first and the second sides, and forming a gate electrode layer to surround each of the first semiconductor layers of the first and second fin structures.

Abstract: A multiple die container load port may include a housing with an opening, and an elevator to accommodate a plurality of different sized die containers. The multiple die container load port may include a stage supported by the housing and moveable within the opening of the housing by the elevator. The stage may include one or more positioning mechanisms to facilitate positioning of the plurality of different sized die containers on the stage, and may include different portions movable by the elevator to accommodate the plurality of different sized die containers. The multiple die container load port may include a position sensor to identify one of the plurality of different sized die containers positioned on the stage.

Abstract: A backsheet of a solar cell module including a substrate, a first protection layer, and a second protection layer is provided. The substrate includes a first surface and a second surface opposite to each other. The first protection layer is disposed on the first surface of the substrate. The second protection layer is disposed on the second surface of the substrate, wherein the first protection layer and the second protection layer include a silicone layer. At least one of the first protection layer and the second protection layer includes diffusion particles, wherein the diffusion particles include zinc oxide, titanium dioxide modified with silicon dioxide, or a combination thereof. A thickness of the first protection layer and a thickness of the second protection layer are respectively 10 ?m to 30 ?m. A solar cell module including the backsheet is also provided.

Abstract: The present disclosure provides an example semiconductor devices and fabrication methods thereof, and memory systems. In one example, the semiconductor device includes: a first chip including a first type of transistor that is planar transistor and a second chip bound on the first chip in the first direction. The second chip includes a second type of transistor that is fin transistor. The semiconductor device and the fabrication method thereof, and the memory system provided in the present disclosure can mitigate the bulk effect between transistors in adjacent two chips. Other examples are disclosed.

Abstract: An artificial tanzanite comprises aluminosilicate and vanadium, wherein the content of the aluminosilicate is in a range from 1 mass % to 30 mass % and the content of the vanadium is in a range from 1000 ppm to 40000 ppm. The artificial tanzanite is prepared by a method comprising: providing a synthetic raw material, wherein the synthetic raw material comprises the aluminosilicate, silicon-containing oxide, vanadium-containing oxide, and calcium-containing salt; and heating the synthetic raw material to a synthetic temperature, and keeping the synthetic raw material under a synthetic pressure to carry out synthetic reaction to form the artificial tanzanite after a period of synthetic time.

Abstract: A method for enhancing kernel reparameterization of a non-linear machine learning model includes providing a predefined machine learning model, expanding a kernel of the predefined machine learning model with a non-linear network for convolution operation of the predefined machine learning model to generate the non-linear machine learning model, training the non-linear machine learning model, reparameterizing the non-linear network back to a kernel for convolution operation of the non-linear machine learning model to generate a reparameterized machine learning model, and deploying the reparameterized machine learning model to an edge device.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A reparameterization method for initializing a machine learning model includes initializing a prefix layer of a first low dimensional layer in the machine learning model and a postfix layer of the first low dimensional layer, inverting the prefix layer to generate an inverse prefix layer of the first low dimensional layer, inverting the postfix layer to generate an inverse postfix layer of the first low dimensional layer, combining the inverse prefix layer, the first low dimensional layer and the inverse postfix layer to form a high dimensional layer, generating parallel operation layers from the high dimensional layer, and assigning initial weights to the parallel operation layers.

Abstract: In aspects of the disclosure, a method, a system, and a computer-readable medium are provided. The method of building a kernel reparameterization for replacing a convolution-wise operation kernel in training of a neural network comprises selecting one or more blocks from tensor blocks and operations; and connecting the selected one or more blocks with the selected operations to build the kernel reparameterization. The kernel reparameterization has a dimension same as that of the convolution-wise operation kernel.

Abstract: The present invention belongs to animal experiments field, disclosed a single factor modeling-constraint method and device for mice chronic fatigue syndrome, the modeling-constraint method is specifically using mineral water bottle to restraint mice; the mineral water bottle is divided into upper, middle and lower parts; the body of mineral water bottle is uniformly drilled for mice to breathe; the inner of the mineral water bottle is blocked by a cardboard to reduce the move space of mice; cover the mice through the divided bottle; one end of the opening is tightly attach to the wall, the other end is tightly attach to the mice feeding box, and keeping 30 minutes to restraint. The present invention utilizes mineral water bottle to make three simple restraint tube, not only saves the costs of experiment, but also turns waste into treasure, which is a simple operation, and increases the possibility of the experiment.

Abstract: A smart wearable device has a signal calibration function executed by a signal calibration method and applied to a finger, a limb and/or a neck of a user. The smart wearable device includes at least one physiological signal detector, at least one pressure detector and an operation processor. The at least one physiological signal detector is adapted to abut against a detection area of the user for detecting a physiological signal. The at least one pressure detector is disposed around the at least one physiological signal detector and adapted to detect a pressure value of the detection area. The operation processor is electrically connected with the at least one physiological signal detector and the at least one pressure detector. The operation processor is adapted to optimize the physiological signal when the pressure value exceeds a predefined pressure threshold.

Abstract: A humanoid finger mechanism includes: a finger seat; at least one proximal knuckle, located at an outer side of the finger seat; at least one middle knuckle, located at an outer side of the at least one proximal knuckle; a distal knuckle, located at an outer side of the at least one middle knuckle; a driver, located at an inner side of the finger seat; a driving cable, wherein a first end of the driving cable is connected with the driver, while a second end of the driving cable is connected with the distal knuckle after sequentially penetrating through the finger seat, the at least one proximal knuckle and the at least one middle knuckle; and a tension band, a first end of the tension band is connected with the finger seat, while a second end of the tension band is connected with the distal knuckle.

Abstract: The application discloses an optical cable assembly and an optical cable testing method. The optical cable assembly comprises: an optical cable wire with a test end; a spool for winding the optical cable; a connection assembly has an optical cable connection port and a test port, the connection assembly is configured to connect objects at both ends of the connection assembly, and the test end of the optical cable is connected to the connection assembly as an object at one end of the optical cable connection port, the test port is located at an operable area of the spool, configured to connect the test equipment to form an optical path between the test equipment and the optical cable wire when the optical cable is tested.

Abstract: A water environment temperature measurement tool includes measurement boxes and a counterweight box; a plurality of groups of the measurement boxes are provided; the counterweight box is movably connected with a group of measurement boxes; and each measurement box is provided with a temperature measurement instrument inside. The water environment temperature measurement tool further comprises: control mechanisms, each comprising a water inlet pipe, a water retaining member, an elastic member, a control assembly, a rotating seat, a rotating shaft, a second screw rod, a control seat and a rotary assembly. In the water environment temperature measurement tool of the present invention, the control mechanisms can achieve extraction and temperature measurement of water at different water body depths by cooperating with the measurement boxes and the temperature measurement instruments.

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

Abstract: A method of operating an integrated circuit includes using a first switching device to couple a bio-sensing device to a first signal path, generating, using the bio-sensing device, a bio-sensing signal on the first signal path in response to an electrical characteristic of a sensing film, using a second switching device to couple a temperature-sensing device to a second signal path, and generating, using the temperature-sensing device, a temperature-sensing signal on the second signal path in response to a temperature of the sensing film. The first and second switching devices, the bio-sensing device, the temperature-sensing device, and the sensing film are components of a sensing pixel of a plurality of sensing pixels of the integrated circuit.

Abstract: A semiconductor device includes a semiconductor substrate, a first epitaxial feature having a first semiconductor material over the semiconductor substrate, and a second epitaxial feature having a second semiconductor material over the semiconductor substrate. The second semiconductor material being different from the first semiconductor material. The semiconductor device further includes a first silicide layer on the first epitaxial feature, a second silicide layer on the second epitaxial feature, a metal layer on the first silicide layer, a first contact feature over the metal layer, and a second contact feature over the second silicide layer. A first number of layers between the first contact feature and the first epitaxial feature is greater than a second number of layers between the second contact feature and the second epitaxial feature.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: A printing head and a method for applying a correction for mounting deviation of light-emitting chips are provided. The printing head includes a plurality of light-emitting chips. Each light-emitting chip includes a plurality of primary light-emitting elements that are continuously arranged. At least one of two adjacent light-emitting chips further includes at least one spare light-emitting element continuously and linearly arranged after the primary light-emitting elements. If the two adjacent light-emitting chips are both at a target mounting position, first N light-emitting units of one of the two light-emitting chips respectively face to first N light-emitting units of the other one of the two light-emitting chips, where N?1. Each two of the light-emitting units facing to each other form a group. One of the two light-emitting units in each of the groups is set to a light emission disabled state.