Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.

Abstract: Disclosed herein are related to an integrated circuit to regulate a supply voltage. In one aspect, the integrated circuit includes a metal rail including a first point, at which a first functional circuit is connected, and a second point, at which a second functional circuit is connected. In one aspect, the integrate circuit includes a voltage regulator coupled between the first point of the metal rail and the second point of the metal rail. In one aspect, the voltage regulator senses a voltage at the second point of the metal rail and adjusts a supply voltage at the first point of the metal rail, according to the sensed voltage at the second point of the metal rail.

Abstract: A grid structure in a pixel array may be at least partially angled or tapered toward a top surface of the grid structure such that the width of the grid structure approaches a near-zero width near the top surface of the grid structure. This permits the spacing between color filter regions in between the grid structure to approach a near-zero spacing near the top surfaces of the color filter regions. The tight spacing of color filter regions provided by the angled or tapered grid structure provides a greater surface area and volume for incident light collection in the color filter regions. Moreover, the width of the grid structure may increase at least partially toward a bottom surface of the grid structure such that the wider dimension of the grid structure near the bottom surface of the grid structure provides optical crosstalk protection for the pixel sensors in the pixel array.

Abstract: The present disclosure provides an information transmission method and device, a node, a server and a computer-readable storage medium. The method includes: determining, by a transmitting node, a reference signal for positioning and transmitting configuration information of the reference signal for positioning to a positioning server, with the reference signal for positioning at least including a Positioning Reference Signal (PRS); and transmitting, by the transmitting node, the reference signal according to the configuration information.

Abstract: In one embodiment, an integrated circuit cell includes a first circuit component and a second circuit component. The first circuit component includes fin field-effect transistors (finFETs) formed in a high fin portion of the integrated circuit cell, the high fin portion of the integrated circuit including a plurality of fin structures arranged in rows. The second circuit component that includes finFETs formed in a less fin portion of the integrated circuit cell, the less fin portion of the integrated circuit including a lesser number of fin structures than the high fin portion of the integrated circuit cell.

Abstract: A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

Abstract: A method for determining golf shot characteristics includes detecting, in imaging data captured by an imager, a signature of a golf shot launched from a first launch area, a field of view of the imager including one of the first launch area and an area adjacent to the first launch area, and determining, from the imaging data, first golf shot characteristics, the first shot characteristics including a first launch location and a first launch time in combination with determining whether the first launch location and the first launch time correspond to a second launch location and a second launch time for second golf shot characteristics determined from sensor data captured by a further sensor arrangement and when no correspondence is found between the first and second launch locations and the first and second launch times, transmitting the first shot characteristics to a display at the first launch location.

Abstract: Gate cutting techniques disclosed herein form gate isolation fins to isolate metal gates of multigate devices from one another before forming the multigate devices, and in particular, before forming the metal gates of the multigate devices. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A gate isolation fin, which separates the first metal gate and the second metal gate, includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is less than the first dielectric constant. A gate isolation end cap may be disposed on the gate isolation fin to provide additional isolation.

Abstract: For example, an Access Point (AP) may be configured to identify a Trigger-Based (TB) sensing measurement exchange of a Wireless Local Area Network (WLAN) sensing procedure to be initiated by the AP. For example, the AP may be configured to determine that a non-AP Multi-Link Device (MLD) at an Enhanced Multi-Link Single Radio (EMLSR) operation mode is to participate as a sensing responder of the TB sensing measurement exchange. For example, the AP may be configured to transmit an Initial Control Frame (ICF) addressed to the non-AP MLD prior to initiating the TB sensing measurement exchange, for example, based on the determination that the non-AP MLD at the EMLSR operation mode is to participate as a sensing responder of the TB sensing measurement exchange.

Abstract: The application discloses an optical cable assembly and an optical cable testing method. The optical cable assembly comprises: an optical cable wire with a test end; a spool for winding the optical cable; a connection assembly has an optical cable connection port and a test port, the connection assembly is configured to connect objects at both ends of the connection assembly, and the test end of the optical cable is connected to the connection assembly as an object at one end of the optical cable connection port, the test port is located at an operable area of the spool, configured to connect the test equipment to form an optical path between the test equipment and the optical cable wire when the optical cable is tested.

Abstract: A humanoid finger mechanism includes: a finger seat; at least one proximal knuckle, located at an outer side of the finger seat; at least one middle knuckle, located at an outer side of the at least one proximal knuckle; a distal knuckle, located at an outer side of the at least one middle knuckle; a driver, located at an inner side of the finger seat; a driving cable, wherein a first end of the driving cable is connected with the driver, while a second end of the driving cable is connected with the distal knuckle after sequentially penetrating through the finger seat, the at least one proximal knuckle and the at least one middle knuckle; and a tension band, a first end of the tension band is connected with the finger seat, while a second end of the tension band is connected with the distal knuckle.

Abstract: The present disclosure provides an example semiconductor devices and fabrication methods thereof, and memory systems. In one example, the semiconductor device includes: a first chip including a first type of transistor that is planar transistor and a second chip bound on the first chip in the first direction. The second chip includes a second type of transistor that is fin transistor. The semiconductor device and the fabrication method thereof, and the memory system provided in the present disclosure can mitigate the bulk effect between transistors in adjacent two chips. Other examples are disclosed.

Abstract: A method for enhancing kernel reparameterization of a non-linear machine learning model includes providing a predefined machine learning model, expanding a kernel of the predefined machine learning model with a non-linear network for convolution operation of the predefined machine learning model to generate the non-linear machine learning model, training the non-linear machine learning model, reparameterizing the non-linear network back to a kernel for convolution operation of the non-linear machine learning model to generate a reparameterized machine learning model, and deploying the reparameterized machine learning model to an edge device.

Abstract: A reparameterization method for initializing a machine learning model includes initializing a prefix layer of a first low dimensional layer in the machine learning model and a postfix layer of the first low dimensional layer, inverting the prefix layer to generate an inverse prefix layer of the first low dimensional layer, inverting the postfix layer to generate an inverse postfix layer of the first low dimensional layer, combining the inverse prefix layer, the first low dimensional layer and the inverse postfix layer to form a high dimensional layer, generating parallel operation layers from the high dimensional layer, and assigning initial weights to the parallel operation layers.

Abstract: An artificial tanzanite comprises aluminosilicate and vanadium, wherein the content of the aluminosilicate is in a range from 1 mass % to 30 mass % and the content of the vanadium is in a range from 1000 ppm to 40000 ppm. The artificial tanzanite is prepared by a method comprising: providing a synthetic raw material, wherein the synthetic raw material comprises the aluminosilicate, silicon-containing oxide, vanadium-containing oxide, and calcium-containing salt; and heating the synthetic raw material to a synthetic temperature, and keeping the synthetic raw material under a synthetic pressure to carry out synthetic reaction to form the artificial tanzanite after a period of synthetic time.

Abstract: The present invention belongs to animal experiments field, disclosed a single factor modeling-constraint method and device for mice chronic fatigue syndrome, the modeling-constraint method is specifically using mineral water bottle to restraint mice; the mineral water bottle is divided into upper, middle and lower parts; the body of mineral water bottle is uniformly drilled for mice to breathe; the inner of the mineral water bottle is blocked by a cardboard to reduce the move space of mice; cover the mice through the divided bottle; one end of the opening is tightly attach to the wall, the other end is tightly attach to the mice feeding box, and keeping 30 minutes to restraint. The present invention utilizes mineral water bottle to make three simple restraint tube, not only saves the costs of experiment, but also turns waste into treasure, which is a simple operation, and increases the possibility of the experiment.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A multiple die container load port may include a housing with an opening, and an elevator to accommodate a plurality of different sized die containers. The multiple die container load port may include a stage supported by the housing and moveable within the opening of the housing by the elevator. The stage may include one or more positioning mechanisms to facilitate positioning of the plurality of different sized die containers on the stage, and may include different portions movable by the elevator to accommodate the plurality of different sized die containers. The multiple die container load port may include a position sensor to identify one of the plurality of different sized die containers positioned on the stage.

Abstract: In aspects of the disclosure, a method, a system, and a computer-readable medium are provided. The method of building a kernel reparameterization for replacing a convolution-wise operation kernel in training of a neural network comprises selecting one or more blocks from tensor blocks and operations; and connecting the selected one or more blocks with the selected operations to build the kernel reparameterization. The kernel reparameterization has a dimension same as that of the convolution-wise operation kernel.