Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Abstract: A power converter having a slew rate controlling mechanism is provided. A first terminal of a high-side switch is coupled to an input voltage. A first terminal of a low-side switch is connected to a second terminal of the high-side switch. A second terminal of a first capacitor is connected to a node between the second terminal of the high-side switch and the first terminal of the low-side switch. A first terminal of an inductor is connected to the second terminal of the first capacitor and to the node. A first terminal of a second capacitor is connected to a second terminal of the inductor. A second terminal of the second capacitor is grounded. An input terminal of a current controlling device is connected to a power output terminal of a high-side buffer. An output terminal of the current controlling device is connected to the node.

Abstract: A system includes multiple microphone arrays positioned at different locations on a roof of an autonomous vehicle. Each microphone array includes two or more microphones. Internal clocks of each microphone array are synchronized by a processor and used to generate timestamps indicating when microphones capture a sound. Based on the timestamps, the processor is configured to localize a source of the sound.

Abstract: A power converter including switch components having different safe operating areas is provided. A first terminal of a first high-side switch is coupled to a common voltage. A first terminal of a first low-side switch is connected to a second terminal of the first high-side switch. A second terminal of the first low-side switch is grounded. A first terminal of a second low-side switch is connected to a node between the second terminal of the first high-side switch and the first terminal of the first low-side switch. A second terminal of the second low-side switch is grounded. A safe operating area of the second low-side switch is larger than a safe operating area of the first low-side switch. After the first low-side switch is turned off, the second low-side switch is turned off Before the first low-side switch is turned on, the second low-side switch is turned on.

Abstract: A method includes forming a semiconductor fin over a substrate; forming first, second, and third gate structures crossing the semiconductor fin; forming first source/drain epitaxy structures over the semiconductor fin and on opposite sides of the first gate structure and forming second source/drain epitaxy structures over the semiconductor fin and on opposite sides of the second gate structure, wherein bottom of the first source/drain epitaxy structures and bottom of the second source/drain epitaxy structures are lower than a top surface of the semiconductor fin; removing the third gate structure to expose the top surface of the semiconductor fin; forming an isolation structure in the semiconductor fin, wherein a bottom of the isolation structure is lower than the bottom of the first source/drain epitaxy structures and the bottom the second source/drain epitaxy structures.

Abstract: A system includes a microphone unit coupled to a roof of an autonomous vehicle. The microphone unit includes a microphone board having a first opening. The microphone unit also includes a first microphone positioned over the first opening and coupled to the microphone board. The microphone unit further includes an accelerometer. The system also includes a processor coupled to the microphone unit.

Abstract: A power converter including switch components having different safe operating areas is provided. A first terminal of a first high-side switch is coupled to a common voltage. A first terminal of a first low-side switch is connected to a second terminal of the first high-side switch. A second terminal of the first low-side switch is grounded. A first terminal of a second low-side switch is connected to a node between the second terminal of the first high-side switch and the first terminal of the first low-side switch. A second terminal of the second low-side switch is grounded. A safe operating area of the second low-side switch is larger than a safe operating area of the first low-side switch. After the first low-side switch is turned off, the second low-side switch is turned off Before the first low-side switch is turned on, the second low-side switch is turned on.

Abstract: Example embodiments described herein involve a system for testing a light-emitting module. The light-emitting module may include a mounting platform configured to hold a light-emitting module for a camera. The mounting platform may also be configured to rotate. The system may further include a housing holding a plurality of photodiodes arranged in an array over at least a 90 degree arc of a hemisphere. The system may also include a controller configured to control the photodiodes and the rotation of the mounting platform.

Abstract: A semiconductor device includes a substrate; a first gate stack disposed on the substrate; a second gate stack disposed on the substrate, wherein a metal component of the first gate stack is different from a metal component of the second gate stack; and a dielectric structure disposed over the substrate and between the first gate stack and the second gate stack, in which the dielectric structure is separated from the first gate stack and the second gate stack, and a distance between the dielectric structure and the first gate stack is substantially equal to a distance between the dielectric structure and the second gate stack.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate. The photoresist layer includes at least an acid labile group (ALG) and a thermo-base generator (TBG). The method further includes exposing a portion of the photoresist layer to a radiation and performing a baking process after the exposing of the portion of the photoresist layer. The TBG releases a base during the performing of the baking process, resulting in a chemical reaction between the ALG and the base. The method further includes removing an unexposed portion of the photoresist layer, resulting in a patterned photoresist layer.

Abstract: A system includes a microphone unit coupled to a roof of an autonomous vehicle. The microphone unit includes a microphone board having a first opening. The microphone unit also includes a first microphone positioned over the first opening and coupled to the microphone board. The microphone unit further includes an accelerometer. The system also includes a processor coupled to the microphone unit.

Abstract: A sensor module comprising a housing defining an internal cavity, the housing including an aperture, at least one microphone positioned in the internal cavity spaced from the aperture, a first barrier proximate the aperture, and a second barrier positioned between the at least one microphone and the first barrier.

Abstract: Example embodiments described herein involve a system for testing a light-emitting module. The light-emitting module may include a mounting platform configured to hold a light-emitting module for a camera. The mounting platform may also be configured to rotate. The system may further include a housing holding a plurality of photodiodes arranged in an array over at least a 90 degree arc of a hemisphere. The system may also include a controller configured to control the photodiodes and the rotation of the mounting platform.

Abstract: Example embodiments described herein involve a system for testing a light-emitting module. The light-emitting module may include a mounting platform configured to hold a light-emitting module for a camera. The mounting platform may also be configured to rotate. The system may further include a housing holding a plurality of photodiodes arranged in an array over at least a 90 degree arc of a hemisphere. The system may also include a controller configured to control the photodiodes and the rotation of the mounting platform.

Abstract: A camera module includes a housing with an opening and a portion that surrounds the opening, wherein the portion of the housing is transparent to near infrared (NIR) light. A fisheye lens is disposed within the opening such that a portion of the fisheye lens protrudes through the opening. An image sensor is disposed within the housing and optically coupled to the fisheye lens. The image sensor is sensitive to visible light and NIR light. A plurality of NIR light emitters is disposed within the housing. The NIR light emitters are configured to emit NIR light through the NIR-transparent portion of the housing. The NIR-transparent portion of the housing may include a light-diffusing structure, such as a pattern of microlenses formed on an inner surface of the NIR-transparent portion of the housing, to spread out the NIR light emitted by the NIR light emitters.

Abstract: A sensor module comprising a housing defining an internal cavity, the housing including an aperture, at least one microphone positioned in the internal cavity spaced from the aperture, a first barrier proximate the aperture, and a second barrier positioned between the at least one microphone and the first barrier.

Abstract: The technology provides a camera module cover that prevents infrared light from leaking into the lens of an adjacent camera. The camera module cover can be used with in-vehicle environments, such as the passenger area and truck, as well as other indoor locations and places where infrared illumination is co-located with an optical camera system. An infrared illuminator unit is positioned adjacent to the camera, for instance in such a way that infrared light is evenly distributed or diffused around the camera lens. The camera module cover has a surface that includes an infrared-transparent material to promote even distribution of the infrared light. To avoid leakage into the camera lens, an infrared-opaque or otherwise blocking material is disposed within the cover so as to be between the infrared illuminator unit and the camera lens. The infrared-transparent and infrared-blocking materials may be formed as a single part via double injection molding.

Abstract: A sensor module comprising a housing defining an internal cavity, the housing including an aperture, at least one microphone positioned in the internal cavity spaced from the aperture, a first barrier proximate the aperture, and a second barrier positioned between the at least one microphone and the first barrier.

Abstract: An IC structure includes a semiconductor fin, first and second gate structures, and an isolation structure. The semiconductor fin extends from a substrate. The first gate structure extends above a top surface of the semiconductor fin by a first gate height. The second gate structure is over the semiconductor fin. The isolation structure is between the first and second gate structures, and has a lower dielectric portion embedded in the semiconductor fin and an upper dielectric portion extending above the top surface of the semiconductor fin by a height that is the same as the first gate height. When viewed in a cross section taken along a longitudinal direction of the semiconductor fin, the upper dielectric portion of the isolation structure has a rectangular profile with a width greater than a bottom width of the lower dielectric portion of the isolation structure.

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.