Abstract: The present disclosure provides a blending method of high-quality and dual-purpose flour for bread and noodles, belonging to the technical field of flour processing. The method includes: selecting flour of a high-quality and dual-purpose wheat variety for bread and noodles as a high-quality basic flour for blending; according to a large gradient experimental design, selecting a gradient range ratio with a sedimentation value ?46.0 mL and a dough development time ?9.6 min, followed by subdividing for small gradient experiments; selecting a ratio with flour sedimentation value and dough development time that reach an ideal value to blend a large amount of flour; and making bread and noodles for scoring, followed by determining a blending ratio if a scoring result reaches an ideal value.

Abstract: A distributed centralized automatic driving method comprises a sensor processing module, a perception positioning module, a perception target detection module, a decision-making module, a planning module, and a vehicle control module. By clearly defining data domains and a control process, a modular design is performed to implement each functional method, and each module can be deployed to a control unit of the corresponding data domain according to the load of a computing platform. The distributed centralized automatic driving method has different computing requirements for different scenarios. By means of a distributed design, centralized computing is distributed to different computing unit modules, so as to greatly improve the stability, efficiency and parallelism of the method, thereby improving the overall performance of the method.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: The present disclosure provides a method for generating a backbone network, an apparatus for generating a backbone network, a device, and a storage medium. The method includes: acquiring a set of a training image, a set of an inference image, and a set of an initial backbone network; training and inferring, for each initial backbone network in the set of the initial backbone network, the initial backbone network by using the set of the training image and the set of the inference image, to obtain an inference time and an inference accuracy of a trained backbone network in an inference process; determining a basic backbone network based on the inference time and the inference accuracy of the trained backbone network in the inference process; and obtaining a target backbone network based on the basic backbone network and a preset target network.

Abstract: Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. According to embodiments of the present disclosure, a height of the work function layer, especially a height of the second portion of the work function layer, is significantly increased, and a height of the first gate material layer is significantly reduced, so that the height ratio of the second portion of the work function layer to the first gate material layer to the second gate material layer is maintained at 3 to 8:1 to 1.5:1; therefore, it can be ensured that the work function of the WL groove filling material layer of the recessed gate structure with a small WL width will be significantly increased, thereby greatly weakening the row hammer effect at the bottom of the WL groove and obviously reducing the GIDL effect at the upper part of the WL groove.

Abstract: A visual inspection method of a curved object executed by a visual inspection system. The visual inspection system includes a robotic arm, a camera mounted at a tail end of the robotic arm, a fixing unit mounted under the camera, and a control unit electrically connected to the robotic arm and the camera. Specific steps of the visual inspection method of the curved object are described hereinafter. Fix a curved object which is to be inspected by the fixing unit. Capture the object which is to be inspected with a plurality of groups of preset parameters by the camera. Use the control unit to calculate a better shooting parameter. Use the better shooting parameter by the camera to proceed with visual inspections of the curved objects which are to be inspected in batches.

Abstract: The presently disclosed subject matter provides antibodies that bind to GPRC5D and methods of using the same.

Abstract: A surgical robot including at least one contact module, a control connection module, at least one first robotic arm, and at least one grip control device. A first transmission member of the control connection module drives the control module through a first transmission connecting member. A first shaft member of the first robotic arm is connected with the first transmission member while the grip control device is connected with the first robotic arm by a transmission interface. A force sensing member of the first robotic arm detects a first reaction force from the contact module so that the first robotic arm sends a feedback control signal to the grip control device to control a grip driving member to generate a force feedback for allowing a grip portion to move. Thereby, users can feel movement of the grip portion caused by the force feedback to avoid accidental iatrogenic injuries.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: An exemplary two-step method for power system inertia online estimation is described. The first step is to accurately estimate the POI-level aggregated inertia. The second step is to calculate the system-level inertia constant by weighting all the POI-level aggregated inertia and to monitor the inertia spatial distribution. In one example embodiment, the PMU is installed at POI, the frequency spatial difference is considered, and the mechanical power is carefully treated.

Abstract: A powder-based three-dimensional printing (3DP) method, device and system, and a computer-readable storage medium. The method includes: analyzing printing images of layers corresponding to a part to be printed to determine a target print image and adding a preset mark to the target print image which includes a print image of a target layer that causes a previous powder layer of the target layer to displace during printing; acquiring an image to be printed of a current layer to be printed; identifying the image to be printed to determine whether the preset mark exists on the image to be printed; and if yes, processing the current layer to be printed and/or a previous powder layer of the current layer to be printed such that the previous powder layer of the current layer does not move with powder spreading of the current layer.

Abstract: A chip packaging structure and a method for fabricating the same are provided. The chip package structure includes a conductive substrate, a dam and a metal shielding layer. The conductive substrate includes a substrate, vias and electrodes. The substrate has first and second board surfaces opposite to each other. The vias penetrate through the first board surface and the second board surface, and a part of the vias is disposed in a first die-bonding region on which a chip is to be arranged. The electrodes extend from the first board surface to the second board surface through the vias. The dam is formed on the first board surface to surround the first die-bonding region, and the dam has a height higher than that of the chip. The metal shielding layer covers the dam and a part of the first board surface that do not overlap with the electrodes.

Abstract: A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.

Abstract: An electronic device includes a back board, a circuit board, a first attaching member and a second attaching member. The circuit board is arranged on the back board. The first attaching member is arranged between the back board and the circuit board. The second attaching member is arranged between the back board and the circuit board. The circuit board is fixed on the back board through the first attaching member and the second attaching member, and a material of the first attaching member is different from that of the second attaching member.

Abstract: A substrate processing apparatus, comprising: a processing chamber having a plasma intake wall configured to receive plasma from a remote plasma source (RPS) and a surrounding wall having an inner surface defining an interior volume for receiving a substrate; and a substrate support having a substrate supporting surface facing the plasma intake wall and elevatably arranged in the interior volume of the processing chamber. The surrounding wall, in a cross-section of the processing chamber, includes: a first segment having a first width associated with a processing region for the substrate support; a second segment having a width greater than the first width that is further away from the plasma intake wall than the first segment.

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Abstract: The present application provides a displaying base plate and a displaying device, which relates to the technical field of displaying. The displaying device can ameliorate the problem of screen greening caused by electrostatic charges, thereby improving the effect of displaying. The displaying base plate includes an active area and a non-active area connected to the active area, the non-active area includes an edge region and a first-dam region, and the first-dam region is located between the active area and the edge region; the displaying base plate further includes: a substrate; an anti-static layer disposed on the substrate, wherein the anti-static layer is located at least within the edge region; and a driving unit and a touch unit that are disposed on the substrate, wherein the driving unit is located within the active area.