Abstract: A method for thermal management of reticles for conducting an exposure process includes operations. A default state of a reticle is selected based on given data, where the given data includes overlay values of a plurality of processed semiconductor workpieces and temperature profiles of the reticle correlated to the processed semiconductor workpieces. The reticle is regulated to reach the default state before using the reticle to perform the exposure process.

Abstract: Embodiments of the present disclosure provide a system and method for stabilizing optical lens temperatures, including detecting infrared radiation emitted from one or more optical lens, generating an infrared sensor signal based upon the detected infrared radiation, directing emission of light from one or more infrared light sources to the one or more optical lenses, and regulating the emission of the light from the one or more infrared light sources based on the infrared sensor signal for adjusting the temperature of the one or more optical lens.

Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating multiple groups of small drops of a target material through a number of nozzles in such a way that small drops in each of the groups are aggregated to an elongated droplet of the target material. The method also includes generating a laser pulse from a laser generator to convert the elongated droplets to plasma which generates an EUV radiation. The method further includes exposing a semiconductor wafer to the EUV radiation.

Abstract: A method of operating a semiconductor apparatus includes generating, by a droplet generator, a target material droplet; receiving, by a catcher, the target material droplet, wherein the catcher has a first section and a second section, wherein the first section of the catcher is closer to the droplet generator than the second section of the catcher; and heating the second section of the catcher, wherein the first section of the catcher is longer than the second section of the catcher and is free of a heater, and heating the second section of the catcher is performed such that a temperature of the second section of the catcher is higher than a temperature of the first section of the catcher.

Abstract: Embodiments described herein relate to a dynamically controlled lens used in lithography tools. Multiple regions of the dynamic lens can be used to transmit a radiation beam for lithography process. By allowing multiple regions to transmit the radiation beam, the dynamically controlled lens can have an extended life cycle compared to conventional fixed lens. The dynamically controlled lens can be replaced or exchanged at a lower frequency, thus, improving efficiency of the lithography tools and reducing production cost.

Abstract: A method for semiconductor fabrication includes mounting a wafer onto a first wafer table. The first wafer table includes a first set of pins that support the wafer, the first set of pins having a first pitch between adjacent pins. The method further includes forming a first set of overlay marks on the wafer; and transferring the wafer onto a second wafer table. The second wafer table includes a second set of pins having a second pitch between adjacent pins. The second set of pins are individually and vertically movable, and the second pitch is smaller than the first pitch. The method further includes moving a portion of the second set of pins such that a remaining portion of the second set of pins supports the wafer and the remaining portion has the first pitch between adjacent pins.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system reduces splashback of the tin droplets onto the receiver by generating a net electric charge within the droplets using a charge electrode and decelerating the droplets by applying an electric field with a counter electrode.

Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating multiple groups of small drops of a target material through a number of nozzles in such a way that small drops in each of the groups are aggregated to an elongated droplet of the target material. The method also includes generating a laser pulse from a laser generator to convert the elongated droplets to plasma which generates an EUV radiation. The method further includes exposing a semiconductor wafer to the EUV radiation.

Abstract: A method includes forming a photoresist layer over a wafer. The photoresist layer is exposed to a pattern of radiation using a photomask. The photoresist layer is developed after the photoresist layer is exposed to the pattern of radiation. The photomask includes a substrate and at least one opaque main feature. The substrate has a recessed region recessed from a first surface of the substrate and has a first width. The at least one opaque main feature protrudes from the first surface of the substrate and has a second width greater than the first width of the recessed region of the substrate. A height of the at least one opaque main feature is greater than a depth of the recess region of the substrate.

Abstract: A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.

Abstract: A method for adhering a reticle onto a top surface of a chuck is provided in accordance with some embodiments of the present disclosure. The method includes sliding a reticle relative to a chuck along a first direction, such that a plurality of fibers over a top surface of the chuck are inclined away from an imaginary line normal to the top surface of the chuck by sliding the reticle relative to the chuck along the first direction; performing a photolithography process using the reticle; and after performing the photolithography process, sliding the reticle relative to the chuck along a second direction opposite to the first direction, such that the fibers are moved back toward the imaginary line by sliding the reticle relative to the chuck along the second direction.

Abstract: Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Abstract: Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Abstract: A substrate table is provided. The substrate table includes a main body having a surface and a plurality of burls extending from the surface. The burls are configured to support a substrate on the main body. The substrate table further includes a number of vacuum channels provided in the burls to apply a vacuum to the substrate. The vacuum channels are distributed throughout the main body and arranged in a grid pattern.

Abstract: A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

Abstract: A temperature controlling apparatus includes a platen, a first and a second conduits, and a first and a second outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater. A first fluid enters the first inlet and exits the first outlet, the first heater heats the first fluid to a first heating temperature, and the first fluid is dispensed on the platen. The second conduit includes a second inlet, a second outlet, and a second heater. A second fluid enters the second inlet and exits the second outlet, the second heater heats the second fluid to a second heating temperature, and the second fluid is dispensed on the platen. The first and the second outlet thermal sensors are respectively disposed at the first and the second outlets to sense temperatures of the first and the second fluid.

Abstract: A method includes transmitting a radiation toward an electrostatic chuck, receiving a reflection of the radiation, analyzing the reflection of the radiation, determining whether a particle is present on the electrostatic chuck based on the analyzing the reflection of the radiation, and moving a cleaning tool to a location of the particle on the electrostatic chuck when the determination determines that the particle is present.

Abstract: A method includes clamping a mask on a mask stage, in which the mask includes a multilayered magnetic film; performing a first lithography process by using the mask; moving the mask away from the mask stage; and determining whether a surface condition of a surface layer of the multilayered thin film is acceptable; and peeling the surface layer of the multilayered magnetic film from the multilayered magnetic film when the surface condition of the surface layer is determined as unacceptable.

Abstract: A method includes mixing a first deionized water (DI) water from a first pipe and a second DI water from a second pipe in a merging pipe that is in fluid communication with the first pipe and the second pipe. An electrical resistivity of the first DI water is different from an electrical resistivity of the second DI water. A mixture of the first DI water and the second DI water is applied from the merging pipe onto a wafer.

Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.