Abstract: A photomask includes a translucent substrate and at least one main feature. The translucent substrate has a recessed region recessed from a first surface of the translucent substrate. The at least one main feature is disposed on the translucent substrate, and protrudes from the first surface of the translucent substrate.

Abstract: A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.

Abstract: Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Abstract: Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

Abstract: A substrate table is provided. The substrate table includes a main body configured to support a substrate thereon. The substrate table further includes a number of vacuum channels provided in the main body and respectively formed with a vacuum opening on a surface of the main body. The vacuum channels are configured to apply a vacuum to the substrate. The vacuum channels are distributed throughout the main body and arranged in a grid pattern.

Abstract: A temperature controlling apparatus includes a platen, a fluid source that supplies a fluid, a first conduit, a second conduit, and a plurality of outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater configured to heat the fluid to a first heating temperature. The fluid having the first heating temperature is dispensed on the platen through the first outlet. The second conduit includes a second inlet, a second outlet and a second heater configured to heat the fluid to a second heating temperature different from the first heating temperature. The fluid having the second heating temperature is dispensed on the platen through the second outlet. The outlet thermal sensors are disposed at the first outlet and the second outlet to sense temperature of the fluid dispensed from the first outlet and the second outlet respectively.

Abstract: A method includes transferring a wafer to a position over a wafer chuck; ejecting a first gas from a purging device above the wafer to clean a top surface of the wafer; after ejecting the first gas, lifting a lifting pin through the wafer chuck to receive the wafer; and after the wafer is received by the lifting pin, ejecting a second gas from first openings in a sidewall of the lifting pin to a region between a bottom surface of the wafer and a top surface of the wafer chuck.

Abstract: A reticle cleaning system includes a casing, a reticle holder, and a static charge reducing device. The reticle holder is in the casing and configured to hold a reticle. The static charge reducing device is above the reticle holder and includes a fluid generator, an ionizer, and a static charge sensor. The fluid generator is configured to control a humidity condition in the casing. The ionizer is configured to provide ionized air molecules to the reticle. The static charge sensor is configured to detect a static charge value on the reticle, wherein the ionizer is between the fluid generator and the static charge sensor.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.

Abstract: A method includes transmitting a radiation toward an electrostatic chuck, receiving a reflection of the radiation, analyzing the reflection of the radiation, determining whether a particle is present on the electrostatic chuck based on the analyzing the reflection of the radiation, and moving a cleaning tool to a location of the particle on the electrostatic chuck when the determination determines that the particle is present.

Abstract: A method of dispensing a fluid in a semiconductor manufacturing process includes providing a substrate, positioning a nozzle above the substrate, and determining a cross-sectional shape of the nozzle. The method also includes configuring the nozzle to have the determined cross-sectional shape and applying the fluid to the substrate through the nozzle with the determined cross-sectional shape.

Abstract: A drainage device includes a tank, a pipe and an air duct. The tank has a base plate and at least one first wall. The first wall is disposed on the base plate. The base plate and the first wall define a space. The pipe defines a channel. The pipe connects with the base plate. The channel communicates with the space. The air duct is disposed partially in the space and partially in the channel. There exists at least one gap between an outer surface of the air duct and an inner surface of the pipe.

Abstract: A vortex generator including an annular bearing for mounting on an interior surface of an exhaust line. The vortex generator further includes an annular blade assembly mounted on the annular bearing. The annular blade assembly includes a leading face with an upstream opening having a first radius. The annular blade assembly further includes a trailing face with a downstream opening having a second radius, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line, and the second radius is different from the first radius. The annular blade assembly further includes a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and each opening of the plurality of openings extends beyond the annular bearing in a direction parallel to the longitudinal axis.

Abstract: A method includes generating extreme ultraviolet (EUV) light. The EUV light is gathered onto a first region of a first optical reflector by using a collector. A second region of the first optical reflector is free from incidence of the EUV light when the EUV light is reflected onto the first region. The EUV light is reflected to a reticle by using the first optical reflector, so as to impart the EUV light with a pattern. The first optical reflector is rotated such that the EUV light is reflected onto the second region in a first time period and the EUV light is reflected onto the first region in a second period. The first region is free from incidence of the EUV light in the first time period, and the second region is free from incidence of the EUV light in the second time period.

Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.

Abstract: Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.

Abstract: A method includes transferring a wafer to a position over a wafer chuck; lifting a lifting pin through the wafer chuck to the wafer; introducing a gas to a region between the wafer and the wafer chuck through a plurality of first openings on a sidewall of the lifting pin; and lowering the lifting pin until the wafer reaches the wafer chuck.

Abstract: A method of performing a substrate detection process is provided. The method includes emitting a signal to a surface of a substrate from an emitter disposed in a substrate storage container. The method also includes collecting the signal reflected from the surface of the substrate by a receiver disposed in the substrate storage container. The method further includes transmitting data corresponding to the collected signal to a signal processor. In addition, the method includes analyzing the data, and determining whether an action is to be performed on the substrate based on the analyzing.

Abstract: A method for cleaning a reticle includes rotating the reticle, providing a cleaning liquid to clean the reticle, detecting a static charge value on the reticle during rotating the reticle, and reducing static charges on the reticle in response to the detected static charge value. Hence, the electrostatic discharge (ESD) occurred to the reticle can be prevented.