Abstract: A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a second conductive line disposed adjacent to the first conductive line, surrounded by the dielectric layer and extended parallel to the first conductive line; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via substantially parallel to the first surface of the substrate, wherein the cross section of the conductive via is at least partially protruded from the first conductive line towards the second conductive line. Further, a method of manufacturing the semiconductor structure is also disclosed.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the following operations. A first layout including a plurality of first features is provided. A modified second layout is determined. The modified second layout includes a plurality of modified features separated from each other, and each of the plurality of modified features respectively overlaps each of the plurality of first features. The modified second layout is outputted to a photomask.

Abstract: A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a second conductive line disposed adjacent to the first conductive line, surrounded by the dielectric layer and extended parallel to the first conductive line; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via substantially parallel to the first surface of the substrate, wherein the cross section of the conductive via is at least partially protruded from the first conductive line towards the second conductive line. Further, a method of manufacturing the semiconductor structure is also disclosed.

Abstract: A semiconductor device manufacturing method including: simultaneously forming a plurality of conductive bumps respectively on a plurality of formation sites by adjusting a forming factor in accordance with an environmental density associated with each formation site; wherein the plurality of conductive bumps including an inter-bump height uniformity smaller than a value, and the environmental density is determined by a number of neighboring formation sites around each formation site in a predetermined range.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes providing a first layout including a plurality of first features and a second layout including a plurality of second features; shifting the second layout to generate a plurality of virtual layouts; comparing a score of each of the plurality of virtual layouts and determining a modified second layout having a target score out of the plurality of virtual layouts; and outputting the modified second layout to a photomask.

Abstract: A method includes: receiving a design layout comprising a feature extending in a peripheral region and a central region of the design layout; determining compensation values associated with a pellicle assembly and the peripheral region according to an exposure distribution in an exposure field of a workpiece; and adjusting the design layout according to the compensation values. The modifying of the shape of the feature according to the compensation values includes: partitioning the peripheral region into compensation zones, wherein the feature includes first portions disposed within the respective compensation zones and a second portion disposed within the central region; and reducing line widths of the first portions of the feature according to the compensation values associated with the respective compensation zones while keep the second portion of the feature uncompensated.

Abstract: A claw machine includes a compartment for containing multiple prizes, a crane module movable in the compartment, a chute, a claw module, a turntable, a coin module, a control system, and an operation module including at least one joy stick and at least one button. In operation, the control system actuates the turntable module. A player is allowed to operate the joy stick and the button to move the crane module, to lift and lower the claw module relative to the crane module, to open and close the claw module to fetch a desired one of prizes, and to open the claw module to drop the desired prize onto the turntable module. The turntable module casts the desired prize toward the chute in a centrifugal manner.

Abstract: The present disclosure provides a method and a system for generating photomask patterns. The system obtains a design layout image, and generates a hotspot image corresponding to the design layout image based on a hotspot detection model. The system generates two photomask patterns based on the hotspot image. The at least two photomask patterns are transferred onto a semiconductor substrate.

Abstract: A method, a non-transitory computer-readable storage medium and a system for adjusting a design layout are provided. The method includes: receiving a design layout including a feature in a peripheral region of the design layout; determining a first compensation value associated with the peripheral region according to an exposure distribution in an exposure field of a workpiece; and adjusting the design layout by modifying a shape of the feature according to the compensation value.

Abstract: Present disclosure provides a mask and a method for fabricating a semiconductor device, the mask includes a target pattern having consecutive edges, a first scattering bar and a second scattering bar extending along a primary direction and adjacent to consecutive edges of the target pattern, wherein the first scattering bar and the second scattering bar partially overlaps in the primary direction, and a connecting segment connecting between a first end of the first scattering bar and a first end of the second scattering bar, wherein the first scattering bar is not parallel to the connecting segment.

Abstract: A claw machine includes a compartment for containing multiple prizes, a crane module movable in the compartment, a chute, a claw module, a turntable, a coin module, a control system, and an operation module including at least one joy stick and at least one button. In operation, the control system actuates the turntable module. A player is allowed to operate the joy stick and the button to move the crane module, to lift and lower the claw module relative to the crane module, to open and close the claw module to fetch a desired one of prizes, and to open the claw module to drop the desired prize onto the turntable module. The turntable module casts the desired prize toward the chute in a centrifugal manner.

Abstract: Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-lavers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N stack, where 0<x1?1 and 0?y1<1. An LED device including the multi-quantum well structure is also disclosed.

Abstract: A contactless game controller includes a direction panel, at least one direction module, a button-simulating panel and at least one button-simulating panel. The direction panel is supported on the game machine and includes at least one direction-indicating window. The direction module is located under the direction panel corresponding to the direction-indicating window and electrically connected to the control box. The button-simulating panel is supported on the game machine and includes at least one button-simulating window. The button-simulating module is located under the button-simulating panel corresponding to the button-simulating window and electrically connected to the control box.

Abstract: Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.

Abstract: A contactless game controller includes a direction panel, at least one direction module, a button-simulating panel and at least one button-simulating panel. The direction panel is supported on the game machine and includes at least one direction-indicating window. The direction module is located under the direction panel corresponding to the direction-indicating window and electrically connected to the control box. The button-simulating panel is supported on the game machine and includes at least one button-simulating window. The button-simulating module is located under the button-simulating panel corresponding to the button-simulating window and electrically connected to the control box.

Abstract: Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N/GaN stack, where 0<x1?1 and 0?y1<1, and for the remainder of the potential barrier sub-layers, each of the potential barrier sub-layers is a GaN layer. An LED device including the multi-quantum well structure is also disclosed.

Abstract: A claw machine includes a chute and a sensor for detecting a won prize dropped to the chute. The sensor includes infrared units, a comparator, a calculating and judging unit, an actuating unit, an indicator, a controller, an integrated circuit board and a casing. Each of the infrared units includes an infrared transmitter for emitting an incident infrared beam with a carrier wave at a predetermined frequency and an infrared receiver for receiving a reflected infrared beam at the predetermined frequency. The controller instructs, controls, commands and manages the infrared units, the comparator, the calculating and judging unit, the actuating unit and the indicator. The infrared units, the comparator, the calculating and judging unit, the actuating unit and the indicator are supported on the integrated circuit board. The casing contains the integrated circuit board. The casing, which contains the integrated circuit board, is supported on a wall of the chute.

Abstract: A method includes providing a first design layout including cells; updating a first cell in the plurality of cells using optical proximity correction to provide a first updated cell and a data set; training a model based on a layout-dependent parameter of a second design layout; and updating a second cell based on the data set and the model to provide a second updated cell. The model includes an input layer, a hidden layer and an output layer. Training the model includes obtaining converged values of nodes of the hidden layer. Obtaining converged values of nodes of the hidden layer includes providing information on edge segments before and after lithography enhancement to the input layer and the output layer, respectively, until values of nodes of the hidden layer attains convergence in terms of a cost function.

Abstract: A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.

Abstract: The disclosure illustrates a composite substrate and a method for manufacturing the same, the method including: disposing a mask layer on an upper surface of a substrate; forming a plurality of mask patterns spaced apart from each other to form a plurality of intervals thereamong; filling a dummy metallic material into the intervals; removing the mask patterns to form a mesh-like dummy metallic layer; and removing the dummy metallic layer while depositing a nitride layer so as to form a mesh-like structure confined by the nitride layer and the substrate. The disclosure also illustrates a method for manufacturing a light-emitting device using the composite substrate.