Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

Abstract: An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.

Abstract: An oven controlled crystal oscillator consisting of heater-embedded ceramic package includes a substrate, a crystal package, a crystal blank, a metal lid, a first IC chip, and a cover lid. The crystal package is mounted on the substrate, and a central bottom of the crystal package is provided with the first IC chip. The crystal blank is mounted in the crystal package and sealed by the metal lid. The crystal package has an embedded heater layer establishing a symmetric thermal field with respect to the first IC chip and the crystal blank. Alternatively, a heater-embedded ceramic carrier substrate is arranged between the first IC chip and the crystal blank to establish a symmetric thermal field with respect to the first IC chip and the crystal blank. The cover lid is combined with the substrate to cover the crystal package and the metal lid.

Abstract: A 3D model construction device includes a camera and a wearable display coupled to the camera. The camera obtains multiple first frames, a second frame and depth information. The wearable display includes a display unit, a processing unit, a storage unit and a projection unit. The storage unit stores a first module and a second module. When the first module is performed by the processing unit, the processing unit calculates a first pose of the wearable display. When the second module is performed by the processing unit, the processing unit calculates a 3D model according to the first frames, the depth information, the first pose and calibration parameters, and updates the 3D model according to the second frame. The projection unit projects the 3D model and the second frame onto the display unit according to the first pose for being displayed with a real image on the display unit.

Abstract: The present disclosure provides a lithography system. The lithography system includes an exposing module configured to perform a lithography exposing process using a mask secured on a mask stage; and a cleaning module integrated in the exposing module and designed to clean at least one of the mask and the mask stage using an attraction mechanism.

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

Abstract: Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.

Abstract: An oven controlled crystal oscillator consisting of heater-embedded ceramic package includes a substrate, a crystal package, a crystal blank, a metal lid, a first IC chip, and a cover lid. The crystal package is mounted on the substrate, and a central bottom of the crystal package is provided with the first IC chip. The crystal blank is mounted in the crystal package and sealed by the metal lid. The crystal package has an embedded heater layer establishing a symmetric thermal field with respect to the first IC chip and the crystal blank. Alternatively, a heater-embedded ceramic carrier substrate is arranged between the first IC chip and the crystal blank to establish a symmetric thermal field with respect to the first IC chip and the crystal blank. The cover lid is combined with the substrate to cover the crystal package and the metal lid.

Abstract: An image synthesis method of a virtual object and the apparatus thereof are provided. The image synthesis method of the virtual object comprises providing a first depth image of a scene and a first two-dimensional image of the scene; providing a second depth image of the virtual object; adjusting a second depth value of the virtual object in the first depth image according to an objective location in the first depth image and a reference point of the second depth image; rendering a second two-dimensional image of the virtual object; and synthesizing the first two-dimensional image and the second two-dimensional image according to a lighting direction of the first two-dimensional image, an adjusted second depth value and the objective location in the first depth image.

Abstract: An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.

Abstract: An oven controlled crystal oscillator consisting of heater-embedded ceramic package includes a substrate, a crystal package, a crystal blank, a metal lid, a first IC chip, and a cover lid. The crystal package is mounted on the substrate, and a central bottom of the crystal package is provided with the first IC chip. The crystal blank is mounted in the crystal package and sealed by the metal lid. The crystal package has an embedded heater layer establishing a symmetric thermal field with respect to the first IC chip and the crystal blank. Alternatively, a heater-embedded ceramic carrier substrate is arranged between the first IC chip and the crystal blank to establish a symmetric thermal field with respect to the first IC chip and the crystal blank. The cover lid is combined with the substrate to cover the crystal package and the metal lid.

Abstract: Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.

Abstract: A fan module includes a housing, a bearing, a rotating shaft, and a fan wheel. The housing includes a bottom covering plate, a top covering plate, and a side wall connected between the bottom covering plate and the top covering plate and surrounding to form a housing space. The bearing is disposed on the bottom covering plate and includes a supporting pillar. The supporting pillar extends from the bottom covering plate toward the top covering plate. The rotating shaft has a first through hole therein. The rotating shaft is rotatably sleeved onto the supporting pillar by the first through hole. The fan wheel is connected to an outer edge of the rotating shaft.

Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

Abstract: The present disclosure provides an air exhaust valve, including a first valve body, a second valve body and a gasket. The first valve body and the second valve body are engaged with each other. The second valve body includes a first opening, a second opening, a first spacer and a second spacer. The first opening is provided within a bottom portion of the second valve body. The second opening is adjacent to and in communication with the first opening, and is provided within the bottom portion of the second valve body. The first spacer is provided within the first opening to form at least one first channel, and the second spacer is provided within the second opening to form at least one second channel. The first channel and the second channel are staggered with respect to each other.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.

Abstract: Positioning devices and positioning methods are provided. The positioning device includes a laser source and an optical assembly. The optical assembly is configured to direct a laser beam projected from the laser source toward a floor and a ceiling of a semiconductor fabrication facility to generate a first laser line on the floor and a second laser line on the ceiling. The first laser line and the second laser line are parallel to and aligned with each other when viewed in a direction perpendicular to the floor and the ceiling. Accordingly, the first laser line and the second laser line can be used to align a semiconductor tool and an overhead hoist transport system in the semiconductor fabrication facility.

Abstract: Various methods are disclosed herein for reducing (or eliminating) printability of mask defects during lithography processes. An exemplary method includes performing a first lithography exposing process and a second lithography exposing process using a mask to respectively image a first set of polygons oriented substantially along a first direction and a second set of polygons oriented substantially along a second direction on a target. During the first lithography exposing process, a phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the first direction and a third direction that is different than the first direction. During the second lithography exposing process, the phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the second direction and a fourth direction that is different than the third direction.