Abstract: A method of removing particles from a surface of a reticle is disclosed. The reticle is placed in a carrier, a source gas is flowed into the carrier, and a plasma is generated within the carrier. Particles are then removed from a surface of the reticle using the generated plasma. A system of removing particles from a surface includes a carrier configured to house a reticle, a reticle stocker including the carrier, a power supply configured to apply a potential between an inner cover and an inner baseplate of the carrier, and a gas source configured to flow a gas into the carrier. A plasma may be generated within the carrier, and particles can be removed from a surface of the reticle using the generated plasma. An acoustic energy source configured to agitate at least one of the source gas and the generated plasma may be provided to facilitate particle removal using an agitated plasma.

Abstract: An image synthesis method of a virtual object and the apparatus thereof are provided. The image synthesis method of the virtual object comprises providing a first depth image of a scene and a first two-dimensional image of the scene; providing a second depth image of the virtual object; adjusting a second depth value of the virtual object in the first depth image according to an objective location in the first depth image and a reference point of the second depth image; rendering a second two-dimensional image of the virtual object; and synthesizing the first two-dimensional image and the second two-dimensional image according to a lighting direction of the first two-dimensional image, an adjusted second depth value and the objective location in the first depth image.

Abstract: In an embodiment of the disclosure, a handheld 3D scanning device is provided. The handheld 3D scanning device comprises at least one first 3D sensing module, at least one second 3D sensing module, and a fixing unit. Each of the at least one first 3D sensing module and the at least one second 3D sensing module comprises at least one projecting unit and at least one image sensing unit for performing a 3D scanning to an object to be measured. The fixing unit is provided to fix the at least one first 3D sensing module and the at least one second 3D sensing module at specific locations, respectively.

Abstract: The present disclosure provides a method in accordance with some embodiments. The method includes loading a mask to a lithography system, wherein the mask includes an one-dimensional integrated circuit (1D IC) pattern; utilizing a pupil phase modulator in the lithography system to modulate phase of light diffracted from the mask; and performing a lithography exposing process to a target in the lithography system with the mask and the pupil phase modulator.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system. The EUV lithography system includes a collector having a coating surface designed to collect and reflect EUV radiation; a gas supply module; and a gas pipeline integrated with the collector and connected to the gas supply module. The gas pipeline includes inward and outward entrances into the collector. The inward and outward entrances are configured and operable to form a gas curtain on the coating surface of the collector.

Abstract: Systems and methods for monitoring the focus of an EUV lithography system are disclosed. Another aspect includes a method having operations of measuring a first shift value for a first patterned set of sub-structures of a focus test structure on a wafer and measuring a second shift value for a second patterned set of sub-structures of the test structure on the wafer. The test structure may be formed on the wafer using asymmetric illumination, with the first patterned set of sub-structures having a first pitch and the second patterned set of sub-structures having a second pitch that is different from the first pitch. The method may further include determining a focus shift compensation for an illumination system based on a difference between the first shift value and the second shift value.

Abstract: An oven controlled crystal oscillator consisting of heater-embedded ceramic package includes a substrate, a crystal package, a crystal blank, a metal lid, a first IC chip, and a cover lid. The crystal package is mounted on the substrate, and a central bottom of the crystal package is provided with the first IC chip. The crystal blank is mounted in the crystal package and sealed by the metal lid. The crystal package has an embedded heater layer establishing a symmetric thermal field with respect to the first IC chip and the crystal blank. Alternatively, a heater-embedded ceramic carrier substrate is arranged between the first IC chip and the crystal blank to establish a symmetric thermal field with respect to the first IC chip and the crystal blank. The cover lid is combined with the substrate to cover the crystal package and the metal lid.

Abstract: A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: An object scanning method comprising following steps is provided. An object is scanned and a depth information of the object is captured by a depth sensor. A motor is moved and another depth information of the object after the movement of the motor is captured at least once. Under the circumstance that the axis coordinate of the motor are not calibrated, a movement amount of the motor is captured. A comparison of at least one feature point is made between two depth information of the object according to the movement amount of the motor, and an iterative algorithm is used to obtain corresponding coordinate of each feature point until the comparison of each feature point is completed. A 3D model of the object is created according to the corresponding coordinate of each feature point.

Abstract: The present disclosure relates to a deformable reticle chuck. In some embodiments, an extreme ultraviolet (EUV) deformable reticle chuck has a substrate of insulating material with a plurality of protrusions extending outward from a first side of the substrate. A resistive material is arranged along a second side of the substrate below the plurality of protrusions. The resistive material is configured to expand in response to an applied current or voltage to adjust a shape of a reticle.

Abstract: A reflective mask includes a substrate; a reflective multilayer formed on the substrate; an absorber layer formed on the reflective multilayer, wherein the absorber layer is patterned to have openings according to an integrated circuit layout; and a protection layer formed over the reflective multilayer within the openings.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: A filter for a hemodialysis apparatus is provided, which includes: a first cover member, a second cover member coupled to the first cover member, and a membrane disposed in a chamber of the first cover member. The membrane has a first membrane layer and two second membrane layers respectively bonded to two opposite sides of the first membrane layer. A plurality of first ridges and second ridges are formed on a side surface of the second cover member, spaced apart from one another and having different widths so as to increase the friction force. The non-directional three-layer structure of the membrane has a high water pressure resistance, greatly reduces the chance of fluid leakage, and avoids erroneous disposition.

Abstract: Some embodiments of the present disclosure related to a method to form and operate the reflective surface to compensate for aberration effects on pattern uniformity. In some embodiments, the reflective surface comprises a mirror of within reduction optics of an EUV illumination tool. In some embodiments, the reflective surface comprises a reflective reticle. An EUV reflective surface topography comprising a reflective surface is disposed on a surface of a substrate, and is manipulated by mechanical force or thermal deformation. The substrate includes a plurality of cavities, where each cavity is coupled to a deformation element configured to expand a volume of the cavity and consequently deform a portion of the reflective surface above each cavity, for local control of the reflective surface through thermal deformation of a resistive material subject to an electric current, or mechanical deformation due to pressurized gas within the cavity or a piezoelectric effect.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system. The EUV lithography system includes a collector having a coating surface designed to collect and reflect EUV radiation; a gas supply module; and a gas pipeline integrated with the collector and connected to the gas supply module. The gas pipeline includes inward and outward entrances into the collector. The inward and outward entrances are configured and operable to form a gas curtain on the coating surface of the collector.

Abstract: The present disclosure relates to a deformable reticle chuck. In some embodiments, an extreme ultraviolet (EUV) deformable reticle chuck has a substrate of insulating material with a plurality of protrusions extending outward from a first side of the substrate. A resistive material is arranged along a second side of the substrate below the plurality of protrusions. The resistive material is configured to expand in response to an applied current or voltage to adjust a shape of a reticle.

Abstract: Systems and methods for monitoring the focus of an EUV lithography system are disclosed. Another aspect includes a method having operations of measuring a first shift value for a first patterned set of sub-structures of a focus test structure on a wafer and measuring a second shift value for a second patterned set of sub-structures of the test structure on the wafer. The test structure may be formed on the wafer using asymmetric illumination, with the first patterned set of sub-structures having a first pitch and the second patterned set of sub-structures having a second pitch that is different from the first pitch. The method may further include determining a focus shift compensation for an illumination system based on a difference between the first shift value and the second shift value.