Patents by Inventor Chia-Liang Hsu

Chia-Liang Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting element having a reflective structure with high efficiency
    Patent number: 9331247
    Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: May 3, 2016
    Assignee: Epistar Corporation
    Inventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Chen, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
  • Method and apparatus for testing light-emitting device
    Patent number: 9316687
    Abstract: Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with a current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes; wherein the magnitude of the current is determined such that the current density driving each of the light-emitting diodes is smaller than or equal to 300 mA/mm2.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: April 19, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chia-Liang Hsu, Chih-Chiang Lu
  • Light-emitting device
    Patent number: 9312463
    Abstract: A light-emitting device comprises: a supporting member having a top surface with a first surface area and a bottom surface with a second surface area; a first conductive via having a top surface with a third surface area; a second conductive via separated from the first conductive via and having a top surface with a fourth surface area, wherein the supporting member surrounds the first conductive via and the second conductive via; and a semiconductor structure comprising an active layer on the supporting member; wherein the sum of the third surface area and the fourth surface area is greater than 40% of the first surface area and smaller than the first surface area.
    Type: Grant
    Filed: April 10, 2015
    Date of Patent: April 12, 2016
    Assignee: EPISTAR CORPORATION
    Inventor: Chia-Liang Hsu
  • Light-emitting diode device
    Patent number: 9305904
    Abstract: A light-emitting diode device includes a transparent substrate having an edge side, a peripheral region and a central region surrounded by the peripheral region; and a plurality of light-emitting diode units disposed along the peripheral region and having a first light-emitting diode unit with an edge parallel to the edge side. The central region is devoid of any light-emitting diode unit.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: April 5, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Jhih-Sian Wang, Chia-Liang Hsu, Yi-Ming Chen, Yi-Tang Lai
  • APPARATUS FOR FLIPPING SEMICONDUCTOR DEVICE
    Publication number: 20160086836
    Abstract: A method for automatically transferring multiple semiconductor devices from a first substrate to a second substrate comprises steps of providing a first substrate on which the semiconductor device is formed, providing a second substrate directly under the first substrate, automatically moving the first substrate toward the second substrate such that the semiconductor devices are close to the second substrate; connecting the semiconductor devices to the second substrate by exerting force to the second substrate, and taking out the semiconductor devices simultaneously from the first substrate.
    Type: Application
    Filed: December 7, 2015
    Publication date: March 24, 2016
    Inventors: Chih-Wei WEI, Chia-Liang HSU
  • LIGHT-EMITTING DEVICE
    Publication number: 20160079475
    Abstract: A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface higher than the non-planar roughened surface of the first type semiconductor layer.
    Type: Application
    Filed: November 30, 2015
    Publication date: March 17, 2016
    Inventors: Ching-Huai NI, Chia-Liang HSU, Yi-Ming CHEN
  • Light-emitting device
    Patent number: 9276176
    Abstract: A light-emitting device comprises: a light-emitting stack having an active layer; a transparent insulating layer on the light-emitting stack; and an electrode structure having a first electrode on the transparent insulating layer; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the refractive index of the transparent insulating layer is between 1 and 3.4 both inclusive, and the transmittance of the transparent insulating layer is greater than 80%.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: March 1, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Wen-Luh Liao, Hung-Ta Cheng, Yao-Ru Chang, Shih-I Chen, Chia-Liang Hsu
  • Method for forming light-emitting device
    Patent number: 9276166
    Abstract: A method for forming a light-emitting device of the present application comprises providing a wafer; forming a first plurality of light-emitting elements on the wafer; providing a first connection structure to connect each of the first plurality of light-emitting elements; and applying a current flow to one of the first plurality of light-emitting elements for testing at least one electrical property of the light-emitting element while no current flow is applied to the remaining of the first plurality of light-emitting elements.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: March 1, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chia-Liang Hsu, Chih-Chiang Lu
  • Lighting emitting device with aligned-bonding having alignment patterns
    Patent number: 9269859
    Abstract: A light-emitting device comprises a semiconductor light-emitting stacked layer having a first connecting surface, wherein the semiconductor light-emitting stacked layer comprises a first alignment pattern on the first connecting surface, and a substrate under the semiconductor light-emitting stacked layer, wherein the substrate has a second connecting surface being operable for connecting with the first connecting surface, wherein the substrate comprises a second alignment pattern on the second connecting surface, and the second alignment pattern is corresponding to the first alignment pattern.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: February 23, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chia-Liang Hsu, Yi-Ming Chen, Hsin-Chih Chiu
  • Light-emitting device with intermediate layer
    Patent number: 9269870
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: February 23, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Fu Huang, Shiuan-Leh Lin, Chih-Chiang Lu, Chia-Liang Hsu
  • OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    Publication number: 20150380604
    Abstract: An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm?3.
    Type: Application
    Filed: September 11, 2015
    Publication date: December 31, 2015
    Inventors: Shih-I CHEN, Chia-Liang HSU, Chien-Fu HUANG, Tzu-Chieh HSU
  • Apparatus for flipping semiconductor device
    Patent number: 9209058
    Abstract: An apparatus for flipping a semiconductor device comprises a platform comprising a carrier and a roller system, a positioning unit above the platform and comprising a circular opening, and an elevating unit connecting the platform and the positioning unit.
    Type: Grant
    Filed: January 8, 2014
    Date of Patent: December 8, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Wei Wei, Chia-Liang Hsu
  • HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF
    Publication number: 20150349210
    Abstract: A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.
    Type: Application
    Filed: August 13, 2015
    Publication date: December 3, 2015
    Inventors: Chen Ou, Chun-Hsiang Tu, De-Shan Kuo, Chun-Teng Ko, Po-Shun Chiu, Chia-Liang Hsu
  • Light-emitting device
    Patent number: 9202983
    Abstract: A light-emitting device comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer; a bonding layer formed between the substrate and the semiconductor stack; and a plurality of buried electrodes physically buried in the first type semiconductor layer.
    Type: Grant
    Filed: March 16, 2012
    Date of Patent: December 1, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Ching-Huai Ni, Chia-Liang Hsu, Yi-Ming Chen
  • Light-emitting device having a reflective structure and a metal mesa and the manufacturing method thereof
    Patent number: 9159871
    Abstract: A manufacturing method of a light-emitting device is disclosed. The method provides for patterning a semiconductor stack on a first substrate in order to form multiple light-emitting mesas. A second substrate is then bonded to the multiple light-emitting mesas and a reflective structure is formed on the first substrate. A metal layer is then applied on the reflective structure and the metal layer is patterned to form multiple metal mesas corresponding to the multiple light-emitting mesas, with a portion of the reflective structure being exposed.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: October 13, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Kuang-Ping Chao, Wen-Luh Liao, Fu-Chun Tsai, Shih-I Chen, Chia-Liang Hsu
  • Light-emitting element
    Patent number: 9153747
    Abstract: A light-emitting element includes a light-emitting stack which has an active layer, and a non-oxide insulative layer below the light-emitting stack, wherein a refractive index of the non-oxide insulative layer is less than 1.4.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: October 6, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Wen-Luh Liao, Chien-Chung Hsu, Yao-Ru Chang, Shih-I Chen, Chia-Liang Hsu
  • LED DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150279822
    Abstract: An LED display comprises a first end providing a current, a second end receiving the current, a first LED chip, electrically connected between the first end and the second end, emitting a first light, and a second LED chip, emitting a second light, electrically connected to the first end and is insulated from the second end. The current flows from the first end and through the first LED chip to the second end.
    Type: Application
    Filed: March 27, 2015
    Publication date: October 1, 2015
    Inventor: Chia-Liang HSU
  • LIGHT-EMITTING DIODE DEVICE
    Publication number: 20150262980
    Abstract: A light-emitting diode device includes a transparent substrate having an edge side, a peripheral region and a central region surrounded by the peripheral region; and a plurality of light-emitting diode units disposed along the peripheral region and having a first light-emitting diode unit with an edge parallel to the edge side. The central region is devoid of any light-emitting diode unit.
    Type: Application
    Filed: June 1, 2015
    Publication date: September 17, 2015
    Inventors: Jhih-Sian WANG, Chia-Liang HSU, Yi-Ming CHEN, Yi-Tang LAI
  • LIGHT-EMITTING ARRAY
    Publication number: 20150263256
    Abstract: The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connected to the first light-emitting chip and the second light-emitting chip, wherein the conductive line includes a first segment and a second segment having a radius curvature different from that of the first segment.
    Type: Application
    Filed: March 13, 2015
    Publication date: September 17, 2015
    Inventors: Min-Hsun Hsieh, Guan-Ru He, Chao-Hsing Chen, Jui-Hung Yeh, Chia-Liang Hsu
  • Light-emitting diode
    Patent number: D743919
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: November 24, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Fu-Chun Tsai, Yi-Wen Huang, Shih-I Chen, Chia-Liang Hsu