Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: A system including a processor configured to perform generating a plurality of different layout blocks; selecting, among the plurality of layout blocks, layout blocks corresponding to a plurality of blocks in a floorplan of a circuit; combining the selected layout blocks in accordance with the floorplan into a layout of the circuit; and storing the layout of the circuit in a cell library or using the layout of the circuit to generate a layout for an integrated circuit (IC) containing the circuit. Each of the plurality of layout blocks satisfies predetermined design rules and includes at least one of a plurality of different first block options associated with a first layout feature, and at least one of a plurality of different second block options associated with a second layout feature different from the first layout feature.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A method for assessing drug-resistant Klebsiella pneumoniae includes the following steps. A test sample is provided, wherein the test sample includes a Klebsiella pneumoniae. A spectrum analysis step is performed, wherein the test sample is detected by a mass spectrometry method so as to obtain a target mass spectrum data. An assessing step for drug-resistant Klebsiella pneumoniae is performed, wherein the target mass spectrum data is analyzed so as to assess whether the Klebsiella pneumoniae is resistant to a carbapenem antibiotic or a colistin or not. When the Klebsiella pneumoniae is resistant to the carbapenem antibiotic, the target mass spectrum data includes a first anti-carbapenem feature mark, and when the Klebsiella pneumoniae is resistant to the colistin, the target mass spectrum data includes a first anti-colistin feature mark.

Abstract: Disclosed are an interposer substrate, a package structure and a manufacturing method of a package structure. In one embodiment, the interposer substrate includes a substrate, a bridge device in the substrate, a memory in the substrate and beside the bridge device and a through substrate via in the substrate and beside the bridge device and the memory.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a semiconductor layer, a micro-electromechanical systems (MEMS) structure defined in the semiconductor layer, a bond ring over the semiconductor layer, and a cap structure over the MEMS structure and bonded to the bond ring. The MEMS structure has an upper surface and the cap structure has a lower surface facing the upper surface of the MEMS structure. Dimples of eutectic material are on the upper surface of the MEMS structure.

Abstract: A modified electrode, manufacturing method thereof and use thereof are provided. The manufacturing method includes steps of soaking a copper substrate in a solution to obtain a BiOI/copper(I) iodide, BiOI/copper(I) iodide/metallic bismuth, and copper(I) iodide/metallic bismuth composite modified electrodes by electroless plating method. The obtained electrodes, designated as bismuth-based modified electrode, can be used for the electrohydrodimerization of acrylonitrile to synthesize adiponitrile.

Abstract: A modified electrode, manufacturing method thereof and use thereof are provided. The manufacturing method includes steps of: mixing a carbon nanomaterial with 2,2?-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid), followed by drop-casting on a screen-printed carbon electrode, to obtain carbon material modified electrodes; and electrochemically pre-treating the carbon material modified electrodes by cyclic voltammetry technique, constant potential technique, or constant current technique to obtain a modified electrode. 3-Ethyl-6-sulfonate benzothiazolinone imine and 3-ethyl-6-sulfonate benzothiazolone compound are formed on a surface of the modified electrode, and the modified electrode is used for protein analysis, protein immobilization and related biosensor, electrochemical catalysis or biofuel cells.

Abstract: Alignment of devices formed on substrates that are to be bonded may be achieved through the use of scribe lines between the devices, where the scribe lines progressively increase or decrease in size from a center to an edge of one or more of the substrates to compensate for differences in the thermal expansion rates of the substrates. The devices on the substrates are brought into alignment as the substrates are heated during a bonding operation due to the progressively increased or decreased sizes of the scribe lines. The scribe lines may be arranged in a single direction in a substrate to compensate for thermal expansion along a single axis of the substrate or may be arranged in a plurality of directions to compensate for actinomorphic thermal expansion.

Abstract: A modified electrode, manufacturing method thereof and use thereof are provided. The manufacturing method includes steps of: mixing a carbon nanomaterial with 2,2?-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid), followed by drop-casting on a screen-printed carbon electrode, to obtain carbon material modified electrodes; and electrochemically pre-treating the carbon material modified electrodes by cyclic voltammetry technique, constant potential technique, or constant current technique to obtain a modified electrode. 3-Ethyl-6-sulfonate benzothiazolinone imine and 3-ethyl-6-sulfonate benzothiazolone compound are formed on a surface of the modified electrode, and the modified electrode is used for protein analysis, protein immobilization and related biosensor, electrochemical catalysis or biofuel cells.

Abstract: Alignment of devices formed on substrates that are to be bonded may be achieved through the use of scribe lines between the devices, where the scribe lines progressively increase or decrease in size from a center to an edge of one or more of the substrates to compensate for differences in the thermal expansion rates of the substrates. The devices on the substrates are brought into alignment as the substrates are heated during a bonding operation due to the progressively increased or decreased sizes of the scribe lines. The scribe lines may be arranged in a single direction in a substrate to compensate for thermal expansion along a single axis of the substrate or may be arranged in a plurality of directions to compensate for actinomorphic thermal expansion.

Abstract: A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.

Abstract: This disclosure provides a heat dissipation device configured to be in thermal contact with a heat source. The heat dissipation device includes a heat dissipation body and a cover plate. The heat dissipation body has at least one vertical channel. The heat dissipation body is configured to be in thermal contact with the heat source. The cover plate includes a first layer and a second layer that are stacked on each other. The first layer is stacked on the heat dissipation body and covers the at least one vertical channel. A thermal conductivity of the first layer is larger than a thermal conductivity of the second layer. The cover plate has at least one first through hole penetrating through the first layer and the second layer and connecting to the at least one vertical channel.

Abstract: A method for updating software comprises transmitting a first version of the software and a first decryption key to a computing system. The method further comprises generating a second version of the software and a second decryption key. The method further comprises encrypting the second version of the software and the second decryption key. The encrypted second version of the software is configured to be decrypted using the first decryption key and not the second decryption key. The method further comprises transmitting the encrypted second version of the software and the encrypted second decryption key to the computing system.

Abstract: A heat dissipation device includes a base plate and a plurality of fins arranged on the base plate. Each fin includes a fin body including a first metal sheet and a second metal sheet coupled to each other, wherein the fin body is curved and includes a first portion and a second portion transverse to the first portion, an evaporation channel defined in the first portion, one or more connecting channels disposed in the first portion and in fluid communication with the evaporation channel, a condensation channel defined in the second portion, and one or more auxiliary channels disposed in the second portion and in fluid communication with the one or more connecting channels and the condensation channel.

Abstract: A glass material with a low dielectric constant and a low fiberizing temperature includes silicon dioxide, boron trioxide, aluminum oxide, calcium oxide, phosphorus pentoxide and zinc oxide. The silicon dioxide makes up 45%-52% by weight of the glass material. The boron trioxide makes up 25%-30% by weight of the glass material. The aluminum oxide makes up 10%-14% by weight of the glass material. The calcium oxide makes up 1%-4% by weight of the glass material. The phosphorus pentoxide makes up 0-3% by weight of the glass material. The zinc oxide makes up 1%-5% by weight of the glass material. The reduced silicon dioxide content and calcium oxide content and addition of phosphorus pentoxide and zinc oxide in the glass material lower the dielectric constant and fiberizing temperature of the glass material.

Abstract: A heat dissipation device includes a base plate and a plurality of fins arranged on the base plate. Each fin includes a fin body including a first metal sheet and a second metal sheet coupled to each other, wherein the fin body is curved and includes a first portion and a second portion transverse to the first portion, an evaporation channel defined in the first portion, one or more connecting channels disposed in the first portion and in fluid communication with the evaporation channel, a condensation channel defined in the second portion, and one or more auxiliary channels disposed in the second portion and in fluid communication with the one or more connecting channels and the condensation channel.