Abstract: A rectangular monobloc optical lens and a manufacturing method thereof are disclosed. A monobloc optical lens includes a rectangular surround and a central mirror-surface area. The rectangular surround is mounted inside a clipping part of a lens holder. The central mirror-surface area consists of a convex aspherical surface and a concave aspherical surface while the convex aspherical surface faces an image side and the concave aspherical surface faces an object side. The manufacturing method includes the steps of: cutting a sheet made from glass material into a plurality of rectangular sheet units; then setting the rectangular sheet unit into a mold for lens for hot pressing. Thereby, the manufacturing process is simplified and the cost is reduced. Moreover, the lens has high resolution and the volume of the lens is effectively reduced so as to increase the applications of the lens.

Abstract: An apparatus-testing mask and a method for calibrating essential parameters of exposure apparatuses on the optics principle base are provided. The mask includes a light-transparent substrate and calibration patterns disposed on the light-transparent substrate. Wherein, each of the calibration patterns includes a recognition pattern having symmetricity, a comparison pattern disposed around the recognition pattern and two pairs of calibration reticles disposed around the comparison pattern and extending along four directions (for example, 0°, 45°, 90° and 135°), respectively. By using the mask to calibrate the exposure apparatuses, the uptime of the exposure apparatuses is enhanced, the masks used for calibration are unified and some essential parameters of an exposure apparatus, such as focal length, skew degree and phase error are able to be calibrated using an auto-feedback system.

Abstract: A rectangular monobloc optical lens and a manufacturing method thereof are disclosed. A monobloc optical lens includes a rectangular surround and a central mirror-surface area. The rectangular surround is mounted inside a clipping part of a lens holder. The central mirror-surface area consists of a convex aspherical surface and a concave aspherical surface while the convex aspherical surface faces an image side and the concave aspherical surface faces an object side. The manufacturing method includes the steps of: cutting a sheet made from glass material into a plurality of rectangular sheet units; then setting the rectangular sheet unit into a mold for lens for hot pressing. Thereby, the manufacturing process is simplified and the cost is reduced. Moreover, the lens has high resolution and the volume of the lens is effectively reduced so as to increase the applications of the lens.

Abstract: A method for evaluating threshold voltage distribution of memory cells. The method comprises connecting all sources and drains of memory cells in a memory array to a fixed voltage; measuring charge pumping current characteristic of a single memory cell versus a first gate voltage and second gate voltage respectively. The total charge pumping current characteristic of a memory array is then measured versus a first gate voltage and second gate voltage respectively. The charge pumping current characteristics of the single memory cell is compared to that of the memory array to obtain a range of threshold voltage distribution.

Abstract: A method for evaluating threshold voltage distribution of memory cells. The method comprises connecting all sources and drains of memory cells in a memory array to a fixed voltage; measuring charge pumping current characteristic of a single memory cell versus a first gate voltage and second gate voltage respectively. The total charge pumping current characteristic of a memory array is then measured versus a first gate voltage and second gate voltage respectively. The charge pumping current characteristics of the single memory cell is compared to that of the memory array to obtain a range of threshold voltage distribution.

Abstract: A weak programming method of a non-volatile memory. A first voltage is applied to a substrate during a first duration, while a control-gate voltage, such as zero volt, is applied to the gate, such that the leakage of the bit line is reduced and electron-hole pairs are generated. In the second duration, a second voltage is applied to the substrate, and a third voltage is applied to the gate to enhance the capability of injecting electrons into the floating gate of the non-volatile memory. Therefore, the distribution of the threshold voltage is more concentrated. The second voltage has a polarity the same as that of the first voltage, while the polarity of the third voltage is opposite to that of the second voltage.

Abstract: A weak programming method of a non-volatile memory. A first voltage is applied to a substrate during a first duration, while a control-gate voltage, such as zero volt, is applied to the gate, such that the leakage of the bit line is reduced and electron-hole pairs are generated. In the second duration, a second voltage is applied to the substrate, and a third voltage is applied to the gate to enhance the capability of injecting electrons into the floating gate of the non-volatile memory. Therefore, the distribution of the threshold voltage is more concentrated. The second voltage has a polarity the same as that of the first voltage, while the polarity of the third voltage is opposite to that of the second voltage.