Abstract: A memory storage device, a memory control circuit unit and a data storage method for a rewritable non-volatile memory module are disclosed. The method includes: receiving first data; mapping a logical unit of the first data to a first physical unit in a first management unit and not storing the first data to the rewritable nonvolatile memory module if a data content of the first data is identical to a data content of second data stored in the first physical unit. The method also includes storing logical-to-physical bit map information to a second physical unit in the first management unit, wherein the logical-to-physical bit map information corresponds to at least one logical-to-physical mapping table and is configured for identifying valid data in the first management unit. Identifiers or symbols of data content may be compared to determine if first and second data are identical.

Abstract: A data protecting method, a memory control circuit unit and a memory storage apparatus are provided. The method includes generating a first temporary parity code group based on first data written into a first super physical unit; generating a second temporary parity code group by performing a logic operation on second data written into a second super physical unit and the first temporary parity code group; and generating an updated parity code group by performing the logic operation on the second temporary parity code group and the first data when data of the first super physical unit all become invalid data.

Abstract: A data encoding method, a memory control circuit unit and a memory storage device are provided. The method includes: writing a first data into a first physical programming units; writing a second data into a second physical programming units; encoding by using the first data without using the second data to generate a first encoded data; encoding by using the second data and a first sub-data of the first data to generate a second encoded data; and writing the first encoded data and the second encoded data into a third physical programming unit and a fourth physical programming unit.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of a rewritable non-volatile memory module at least into a first area and a second area, wherein the second area is programmed with a single-page programming mode and the first area is programmed with a multi-page programming mode. The method further includes receiving first data; and determining whether the number of a physical erasing unit having only part of physical programming units being programmed among the physical erasing units of the first area is less than a predetermined value, and if yes, writing the first data into the physical erasing units of the second area.

Abstract: A data encoding method, a memory control circuit unit and a memory storage device are provided. The method includes: writing a first data into a first physical programming units; writing a second data into a second physical programming units; encoding by using the first data without using the second data to generate a first encoded data; encoding by using the second data and a first sub-data of the first data to generate a second encoded data; and writing the first encoded data and the second encoded data into a third physical programming unit and a fourth physical programming unit.

Abstract: A data storing method, a memory control circuit unit and a memory storage device are provided. The method includes: receiving a first write command from a host system; determining whether to write a first data corresponding to the first write command by using a first mode or write the first data by using a second mode according to an available buffer memory state; writing the first data into a first physical erasing unit among a plurality of physical erasing units by using the first mode when the first data is determined to be written by using the first mode; and writing the first data into a second physical erasing unit among the physical erasing units by using the second mode when the first data is determined to be written by using the second mode.

Abstract: An exemplary embodiment of the disclosure provides a data storage method for a rewritable non-volatile memory module. The method includes: receiving first data; mapping a logical unit of the first data to a first physical unit of a first management unit and not storing the first data to the rewritable non-volatile memory module if a data content of the first data is identical to a data content of second data, and the second data is stored in the first physical unit; and storing logical-to-physical bit map information to a second physical unit in the first management unit, and the logical-to-physical bit map information corresponds to at least one logical-to-physical mapping table and is configured for identifying valid data in the first management unit.

Abstract: A mapping table updating method for a rewritable non-volatile memory module is provided. The method includes: allocating a mapping table storage area for storing a physical address-logical address mapping table in a buffer memory. The method also includes: determining whether a remaining storage space of the mapping table storage area is less than a threshold. If the remaining storage space is less than the threshold, mapping information of the physical address-logical address mapping table stored in the mapping table storage area is updated into at least one logical address-physical address mapping table, and the mapping information of the physical address-logical address mapping table stored in the mapping table storage area is cleared. The method also includes: storing updated mapping information corresponding to a programmed active physical erasing unit into the mapping table storage area.

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided.

Abstract: A data protecting method, a memory storage apparatus and a memory control circuit unit are provided. The method includes: determining whether a first procedure being executed or about to be executed by the memory storage device is a first type procedure; and if the first procedure being executed or about to be executed by the memory storage device is the first type procedure, temporarily stopping receiving a first data corresponding to a first write command before the first procedure is finished.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The method includes: compressing data to generate first data; determining whether a data length of the first data meets a predetermined condition. The method also includes: if the data length of the first data meets the predetermined condition, writing the first data into a first physical erasing unit among a plurality of physical erasing units; if the data length of the first data does not meet the predetermined condition, generating dummy data according to a predetermined rule, padding the first data with the dummy data to generate second data and writing the second data into the first physical erasing unit. A data length of the second data meets the predetermined condition.

Abstract: A mapping table loading method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: receiving a first command; loading a first sub-logical address-physical address mapping table corresponding to the first command if an operating mode of a non-volatile rewritable memory module is a first operating mode; and loading a first logical address-physical address mapping table corresponding to the first command if the operating mode of the non-volatile rewritable memory module is a second operating mode, wherein the first logical address-physical address mapping table includes the first sub-logical address-physical address mapping table.

Abstract: A data reading method for a rewritable non-volatile memory module is provided. The method includes: receiving a read command instructing reading data from a plurality of logical addresses; selecting a plurality of logical addresses meeting a preset condition among the logical addresses, wherein the selected logical addresses include a first logical address mapping to a first physical programming unit and a second logical address mapping to a second physical programming unit, wherein the preset condition includes that the first physical programming unit belongs to a first plane, the second physical programming unit belongs to a second plane, the first plane and the second plane are different and belong to a same die, and a first address index value of the first physical programming unit is different from a second address index value of the second physical programming unit; and reading data belonging to the selected logical addresses in parallel.

Abstract: A memory management method, a memory control circuit unit and a memory storage device are provided. The method includes: configuring a plurality of first type super physical units and at least one second type super physical unit, where one first type super physical unit includes at least two available physical erasing units which may be programmed simultaneously, and one second type super physical unit includes at least two available physical erasing units which may not be programmed simultaneously. The method also includes: configuring the first type super physical unit as to be programmed based on a first programming mode or a second programming mode, and configuring the second type super physical unit as to be programmed only based on the first programming mode.

Abstract: A data programming method and a memory storage device are provided. The method includes: programming a plurality of first type physical units in a rewritable non-volatile memory module to store first data; encoding the first data to generate encoded data; receiving second data; and programming at least one of a plurality of second type physical units in the rewritable non-volatile memory module corresponding to the first type physical units to store at least a part of the second data after the first data is encoded. Therefore, the correcting ability for correcting errors in pair physical units in multi-channel programming procedure may be improved.

Abstract: A mapping table accessing method for a rewritable non-volatile memory module is provided. The method includes: storing a mapping record corresponding to a first physical erasing unit into the first physical erasing unit, wherein the mapping record of the first physical erasing unit is a mapping relation of physical programming units in the first physical erasing unit. The method further includes: storing a mapping record corresponding to a second physical erasing unit into the second physical erasing unit, wherein the mapping record of the second physical erasing unit is a mapping relation of physical programming units in the second physical erasing unit. A size of the mapping record of the first physical erasing unit is different from a size of the mapping record of the second physical erasing unit.

Abstract: A decoding method, a memory controlling circuit unit and a memory storage device are provided. The decoding method includes: performing a first type decoding operation for a first frame including a first codeword to obtain a second codeword. The method also includes: recording error estimate information corresponding to the first frame according to an execution result of the first type decoding operation. The method further includes: updating the first codeword in the first frame to the second codeword if the error estimate information matches a first condition; and performing a second type decoding operation for a block code including the first frame.

Abstract: A memory management method, a memory control circuit unit and a memory storage device are provided, wherein the memory storage device includes a rewritable non-volatile memory module and a buffer memory. The method includes: loading at least one first address information of at least one first logical-physical mapping table from the rewritable non-volatile memory module to a first buffer area when the memory storage device is operated in a first mode, wherein the first address information has a first data quantity; and loading at least one second address information of at least one second logical-physical mapping table from the rewritable non-volatile memory module to the first buffer area when the memory storage device is operated in a second mode, wherein the second address information has a second data quantity, and the first data quantity is less than the second data quantity.

Abstract: A trim command processing method for a memory storage apparatus having a rewritable non-volatile memory module having a plurality of physical programming units is provided. The method includes receiving a command from a host system; starting a trim operation to perform an operation corresponding to a trim command according to a record related to the trim command in a trim table if an operation corresponding the command is performed on the rewritable non-volatile memory module with a first mode; and not starting aforesaid trim operation if the operation corresponding the command is performed on the rewritable non-volatile memory module with a second mode.

Abstract: A data storage method, a memory storage device and a memory control circuit unit are provided. The method includes: determining a first space in a first physical unit of a rewritable non-volatile memory module; and storing at least part of data stored in at least one physical unit of the rewritable non-volatile memory module to a second space in the first physical unit, and the second space is not belonging to the first space, and the first space is for ensuring that valid data stored in at least one second physical unit among the at least one physical unit can be stored to the first physical unit. Therefore, it is ensured that at least one spare physical unit of the memory storage device can be released by a data merging operation of multiple source nodes.