Abstract: A mapping table accessing method for a rewritable non-volatile memory module is provided. The method includes: storing a mapping record corresponding to a first physical erasing unit into the first physical erasing unit, wherein the mapping record of the first physical erasing unit is a mapping relation of physical programming units in the first physical erasing unit. The method further includes: storing a mapping record corresponding to a second physical erasing unit into the second physical erasing unit, wherein the mapping record of the second physical erasing unit is a mapping relation of physical programming units in the second physical erasing unit. A size of the mapping record of the first physical erasing unit is different from a size of the mapping record of the second physical erasing unit.

Abstract: A mapping table updating method for a rewritable non-volatile memory module is provided. The method includes: allocating a mapping table storage area for storing a physical address-logical address mapping table in a buffer memory. The method also includes: determining whether a remaining storage space of the mapping table storage area is less than a threshold. If the remaining storage space is less than the threshold, mapping information of the physical address-logical address mapping table stored in the mapping table storage area is updated into at least one logical address-physical address mapping table, and the mapping information of the physical address-logical address mapping table stored in the mapping table storage area is cleared. The method also includes: storing updated mapping information corresponding to a programmed active physical erasing unit into the mapping table storage area.

Abstract: A memory management method is provided according to an exemplary embodiment. The method includes: receiving a write command and determining whether a usage status of physical units associated to a storage area conforms to a first predetermined status; storing write data corresponding to the write command to at least one of physical units associated to a temporary area if the usage status of the physical units associated to the storage area conforms to the first predetermined status; associating the at least one physical unit storing the write data to the storage area; and allocating at least one logical unit to map the at least one physical unit associated to the storage area.

Abstract: A data writing method for a rewritable non-volatile memory module, and a memory control circuit unit and a memory storage apparatus using the same are provided. The method includes grouping physical erasing units of the rewritable non-volatile memory module into a temporary area and a storage area. The method also includes selecting a first physical erasing unit from the temporary area, copying a plurality of valid data of the first physical erasing unit to a second physical erasing unit of the temporary area, and performing an erasing operation on the first physical erasing unit. The method further includes selecting a third physical erasing unit from the temporary area, copying a plurality of valid data of the third physical erasing unit to a forth physical erasing unit of the storage area, and performing the erasing operation on the third physical erasing unit.

Abstract: A data accessing method for a memory storage apparatus is provided. The method includes using a first check code circuit to generate a first check code corresponding to a first data stream and generating a first data set based on the first data stream and the first check code. The method also includes using a second check code circuit to obtain the first data stream and the first check code from the first data set and check the first data stream according to the first check code. The method still includes using a third check code circuit to generate a second check code according to the checked first data stream and generating a data frame based on the checked first data stream and the second check code and thereby programming the data frame into a physical programming unit.

Abstract: A data accessing method, a memory storage device and a memory controlling circuit unit are provided. The data accessing method includes: determining whether a first physical programming unit storing first data belongs to a first type physical programming unit or a second type physical programming unit; if the first physical programming unit belongs to the first type physical programming unit, generating a first verification code corresponding to the first data and a second verification code for being combined with the first verification code, and writing the first data and the first verification code into the first physical programming unit; and if the first data is decoded unsuccessfully by using the first verification code, combining the second verification code and the first verification code to decode the first data.

Abstract: A data storing method, a memory control circuit unit and a memory storage device are provided. The method includes: generating a parity according to first data. The method also includes: when programming the first data into first physical programming unit, programming at least one mark into redundancy bit area of the first physical programming unit. The method further includes: programming the parity into at least one second physical programming unit arranged after the first physical programming unit, and the at least one mark indicates that the parity is programmed into the at least one second physical programming unit.

Abstract: A data access method for a rewritable non-volatile memory module is provided. The method includes: filling dummy data to first data in order to generate second data, and writing the second data and an error checking and correcting code (ECC code) corresponding to the second data into a first physical programming unit. The method also includes: reading data stream from the first physical programming unit, wherein the data stream includes third data and the ECC code. The method further includes: adjusting the third data according to a pattern of the dummy data in order to generate fourth data when the third data cannot be corrected by using the ECC code, and using the ECC code to correct the fourth data in order to obtain corrected data, wherein the corrected data is identical to the second data.

Abstract: A memory controlling method, a memory storage device and a memory controlling circuit unit are provided. The method includes: providing a first clock signal to a rewritable non-volatile memory module and reading a first data in the rewritable non-volatile memory module according to the first clock signal; providing a second clock signal to the rewritable non-volatile memory module and writing a second data into the rewritable non-volatile memory module according to the second clock signal. A frequency of the second clock signal is different from a frequency of the first clock signal. Accordingly, an operation speed of the rewritable non-volatile memory module may be increased and probabilities of having errors for some operations are decreased.

Abstract: A storage apparatus is provided. The controller of the storage apparatus includes an error correction module and a data disordering module. The error correction module is configured to perform an error correction procedure for a data packet to be written into a flash memory module of the storage apparatus for generating sequence data codes containing the data packet and corresponding error correcting codes, wherein the data packet includes a data area recording data to be written and a spare area recording data related to the data packet. The data disordering module is configured to convert the sequence data codes into non-sequence data codes, wherein the data of the data area and the spare area and error correcting codes are dispersed in the non-sequence data codes. Accordingly, it is possible to effectively increase the safety of the data packet.

Abstract: A data access method for a rewritable non-volatile memory module is provided. The method includes: filling dummy data to first data in order to generate second data, and writing the second data and an error checking and correcting code (ECC code) corresponding to the second data into a first physical programming unit. The method also includes: reading data stream from the first physical programming unit, wherein the data stream includes third data and the ECC code. The method further includes: adjusting the third data according to a pattern of the dummy data in order to generate fourth data when the third data cannot be corrected by using the ECC code, and using the ECC code to correct the fourth data in order to obtain corrected data, wherein the corrected data is identical to the second data.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The method includes: compressing data to generate first data; determining whether a data length of the first data meets a predetermined condition. The method also includes: if the data length of the first data meets the predetermined condition, writing the first data into a first physical erasing unit among a plurality of physical erasing units; if the data length of the first data does not meet the predetermined condition, generating dummy data according to a predetermined rule, padding the first data with the dummy data to generate second data and writing the second data into the first physical erasing unit. A data length of the second data meets the predetermined condition.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The method includes: if data belongs to a first pattern, using a first compression/decompression circuit to compress the data to generate compressed data and writing the compressed data into the rewritable non-volatile memory module; and if data belongs to a second pattern, using a second compression/decompression circuit to compress the data to generate another compressed data and writing the another compressed data into the rewritable non-volatile memory module, wherein the compression speed of the first compression/decompression circuit is higher than that of the second compression/decompression circuit, and the compression rate of the first compression/decompression circuit is lower than that of the second compression/decompression circuit.

Abstract: A data management method is provided, and the method includes: receiving first data and identifying a first address. The method also includes: determining whether the first data is incompressible; and, if the first data is incompressible, determining whether the first address is meeting a requirement of start address. The method further includes: if the first address is not meeting the requirement of start address, storing the padding data starting from the first address, and storing the first data starting from a following address, wherein the following address is meeting the requirement of start address.

Abstract: A data writing method for writing data into a memory cell of a rewritable non-volatile memory module, and a memory control circuit unit and a memory storage apparatus using the same area provided. The method includes recording a wear degree of the memory cell and detecting an operating temperature of the memory storage apparatus. The method further includes adjusting at least one predetermined operation parameter corresponding to the rewritable non-volatile memory module to generate at least one adjusted operation parameter corresponding to the rewritable non-volatile memory module and writing the data into the memory cell based on the at least one adjusted operation parameter if the operating temperature of the memory storage apparatus is larger than a predetermined temperature. Accordingly, the method can accurately store data into the rewritable non-volatile memory module, thereby lowing the operating temperature of the memory storage apparatus.

Abstract: A data accessing method, a memory storage device and a memory controlling circuit unit are provided. The data accessing method includes: determining whether a first physical programming unit storing first data belongs to a first type physical programming unit or a second type physical programming unit; if the first physical programming unit belongs to the first type physical programming unit, generating a first verification code corresponding to the first data and a second verification code for being combined with the first verification code, and writing the first data and the first verification code into the first physical programming unit; and if the first data is decoded unsuccessfully by using the first verification code, combining the second verification code and the first verification code to decode the first data.

Abstract: A data management method is provided. The method includes: dividing each of physical programming units into a data bits area and a spare bits area; generating first data management information corresponding to first data according to a first write command and the first data; determining whether the first data is compressible; and generating first data compression information corresponding to the first data. The method further includes: if the first data is compressible, compressing the first data to generate first compressed data, programming the first compressed data and the first data management information corresponding to the first data into a first data bits area of a first physical programming unit among the physical programming units, and programming the first data compression information into the first spare bits area of the first physical programming unit.

Abstract: A storage unit management method for managing a plurality of physical units in a rewritable non-volatile memory module is provided, wherein the physical units are at least grouped into a data area and a spare area. The method includes configuring a plurality of logical units for mapping to the physical units belonging to the data area, and determining whether the rewritable non-volatile memory module contains cold data. The method further includes performing a first wear-leveling procedure on the physical units if it is determined that the rewritable non-volatile memory module does not contain any cold data, and performing a second wear-leveling procedure on the physical units if it is determined that the rewritable non-volatile memory module contains the cold data.

Abstract: A memory management method, a memory storage device and a memory controlling circuit unit are provided. The method includes: defining a first data management rule for a first type physical unit and a second data management rule for a second type physical unit, and a data density of the first type physical unit is lower than the data density of the second type physical unit; if a first physical unit belongs to the first type physical unit, managing the first physical unit according to the first data management rule to make the data stored in the first physical unit conforming to a first reliability level; and if the first physical unit belongs to the second type physical unit, managing the first physical unit according to the second data management rule to make the data stored in the first physical unit conforming to a second reliability level.

Abstract: A data management method, a memory controller and a memory storage apparatus are provided. The method includes grouping a plurality of physical units of a rewritable non-volatile memory module into at least a data area and a free area. The method also includes configuring a plurality of logical units for mapping a part of the physical units. The method further includes receiving at least two pieces of update data, which are corresponding to different logical pages of the logical units. The method further includes getting a physical unit from the physical units. The method further includes writing the at least two pieces of update data into the same one physical page of the gotten physical unit. Accordingly, the use efficiency of the physical units could be improved.