Patents by Inventor Chih-Wei Chao
Chih-Wei Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978833Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.Type: GrantFiled: December 1, 2021Date of Patent: May 7, 2024Assignee: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Senpeng Huang, Junpeng Shi, Weng-Tack Wong, Shunyi Chen, Zhenduan Lin, Chih-wei Chao, Chen-ke Hsu
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Publication number: 20240136191Abstract: A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Min-Hsiu Hung, Chien Chang, Yi-Hsiang Chao, Hung-Yi Huang, Chih-Wei Chang
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Publication number: 20240113056Abstract: A semiconductor package including a first interposer comprising a first substrate, first optical components over the first substrate, a first dielectric layer over the first optical components, and first conductive connectors embedded in the first dielectric layer, a photonic package bonded to a first side of the first interposer, where a first bond between the first interposer and the photonic package includes a dielectric-to-dielectric bond between a second dielectric layer on the photonic package and the first dielectric layer, and a second bond between the first interposer and the photonic package includes a metal-to-metal bond between a second conductive connector on the photonic package and a first one of the first conductive connectors and a first die bonded to the first side of the first interposer.Type: ApplicationFiled: March 3, 2023Publication date: April 4, 2024Inventors: Hsing-Kuo Hsia, Chen-Hua Yu, Chih-Wei Tseng, Jui Lin Chao
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Publication number: 20240103236Abstract: A method includes forming an optical engine, which includes a photonic die. The photonic die further includes a grating coupler. The method further includes forming a fiber unit including a fiber platform having a groove, and an optical fiber attached to the fiber platform. The optical fiber extends into the groove. The fiber platform further includes a reflector. The fiber unit is attached to the optical engine, and the reflector is configured to deflect a light beam, so that the light beam emitted by a first one of the optical fiber and the grating coupler is received by a second one of the optical fiber and the grating coupler.Type: ApplicationFiled: January 3, 2023Publication date: March 28, 2024Inventors: Chih-Wei Tseng, Jui Lin Chao, Hsing-Kuo Hsia, Chen-Hua Yu
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Publication number: 20240085621Abstract: A method includes encapsulating a first device die and a second device die in an encapsulant, and forming an interconnect structure over and electrically connecting to the first device die and the second device die. A waveguide is formed in the interconnect structure. An optical-engine based interconnect component is bonded to the interconnect structure. The optical-engine based interconnect component forms a part of a signal path that connects the first device die to the second device die.Type: ApplicationFiled: January 6, 2023Publication date: March 14, 2024Inventors: Hsing-Kuo Hsia, Chen-Hua Yu, Chih-Wei Tseng, Jui Lin Chao
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Publication number: 20230396035Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.Type: ApplicationFiled: August 11, 2023Publication date: December 7, 2023Inventors: Hui CHEN, Junpeng SHI, Xinglong LI, CHI-WEI LIAO, Weng-Tack WONG, CHIH-WEI CHAO, Chen-ke HSU
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Patent number: 11769985Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.Type: GrantFiled: January 27, 2022Date of Patent: September 26, 2023Inventors: Hui Chen, Junpeng Shi, Xinglong Li, Chi-Wei Liao, Weng-Tack Wong, Chih-Wei Chao, Chen-ke Hsu
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Patent number: 11742196Abstract: In an embodiment, a method includes: receiving a wafer from a first dilution tank; immersing the wafer in a deionization tank, wherein the deionization tank comprises a tank solution that comprises a deionizing solution; determining a metal ion concentration within the tank solution; performing remediation within the deionization tank in response to determining that the metal ion concentration is greater than a threshold value; and moving the wafer to a second dilution tank.Type: GrantFiled: May 24, 2018Date of Patent: August 29, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Wei Chao, Shu-Yen Wang
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Publication number: 20220362815Abstract: The present disclosure describes a wafer cleaning process in which a drained cleaning solution, which is used to remove metal contaminants from the wafer, is sampled and analyzed to determine the concentration of metal ions in the solution. The wafer cleaning process includes dispensing, in a wafer cleaning station, a chemical solution on one or more wafers; collecting the dispensed chemical solution; determining a concentration of contaminants in the chemical solution; in response to the concentration of the contaminants being greater than a baseline value, adjusting one or more parameters in the cleaning process; and in response to the concentration of the contaminants being equal to or less than the baseline value, transferring the one or more wafers out of the wafer cleaning station.Type: ApplicationFiled: July 28, 2022Publication date: November 17, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Wei Chao, Shu-Yen Wang
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Publication number: 20220359188Abstract: In an embodiment, a method includes: receiving a wafer from a first dilution tank; immersing the wafer in a deionization tank, wherein the deionization tank comprises a tank solution that comprises a deionizing solution; determining a metal ion concentration within the tank solution; performing remediation within the deionization tank in response to determining that the metal ion concentration is greater than a threshold value; and moving the wafer to a second dilution tank.Type: ApplicationFiled: July 22, 2022Publication date: November 10, 2022Inventors: Chih-Wei CHAO, Shu-Yen WANG
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Publication number: 20220302097Abstract: An LED device includes a substrate, a conductive layer, an LED chip, and a discharge element. The substrate has upper and lower surfaces and four edges interconnected to one another and surrounding the upper surface. The conductive layer is formed on the upper surface, and has first and second regions electrically separated by a trench. The trench has a first segment inclined relative to each edge of the substrate by a predetermined angle ranging between 0 and 90 degrees, and a second segment connected to the first segment. The LED chip is disposed across the first segment, and the discharge element is disposed across the second segment, both interconnecting the first and second regions.Type: ApplicationFiled: June 1, 2022Publication date: September 22, 2022Inventors: Shunyi CHEN, Junpeng SHI, Weng-Tack WONG, Chen-ke HSU, Chih-Wei CHAO
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Patent number: 11362074Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.Type: GrantFiled: May 19, 2020Date of Patent: June 14, 2022Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Shunyi Chen, Junpeng Shi, Weng-Tack Wong, Chen-ke Hsu, Chih-Wei Chao
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Publication number: 20220149586Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.Type: ApplicationFiled: January 27, 2022Publication date: May 12, 2022Inventors: Hui CHEN, Junpeng SHI, Xinglong LI, CHI-WEI LIAO, Weng-Tack WONG, CHIH-WEI CHAO, Chen-ke HSU
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Publication number: 20220093832Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.Type: ApplicationFiled: December 1, 2021Publication date: March 24, 2022Inventors: Senpeng HUANG, Junpeng SHI, Weng-Tack WONG, Shunyi CHEN, Zhenduan LIN, Chih-wei CHAO, Chen-ke HSU
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Patent number: 11271362Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.Type: GrantFiled: March 26, 2020Date of Patent: March 8, 2022Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Hui Chen, Junpeng Shi, Xinglong Li, Chi-Wei Liao, Weng-Tack Wong, Chih-Wei Chao, Chen-ke Hsu
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Patent number: 11217732Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(W)/S(?max), ?0.Type: GrantFiled: March 5, 2020Date of Patent: January 4, 2022Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Senpeng Huang, Junpeng Shi, Weng-Tack Wong, Shunyi Chen, Zhenduan Lin, Chih-Wei Chao, Chen-Ke Hsu
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Publication number: 20210184087Abstract: A packaged ultraviolet light-emitting device includes a support member, at least one ultraviolet light-emitting chip, and an encapsulating cover. The support member has opposite top and bottom surfaces, a side surface interconnecting the top and bottom surfaces, and at least one indentation. The ultraviolet light-emitting chip is disposed on the top surface of the support member. The encapsulating cover is made from a fluorine-containing resin, and is disposed over and in contact with the ultraviolet light-emitting chip and the top surface and the indentation of the support member. The encapsulating cover extends into the indentation. A production method of the packaged ultraviolet light-emitting device is also disclosed.Type: ApplicationFiled: March 1, 2021Publication date: June 17, 2021Inventors: Jianbin TU, Yanqiu LIAO, Junpeng SHI, Chih-wei CHAO, Weng-Tack WONG
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Patent number: 11005008Abstract: A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)?B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.Type: GrantFiled: June 26, 2019Date of Patent: May 11, 2021Assignee: Xiamen San'An Optoelectronics Co., Ltd.Inventors: Senpeng Huang, Zhen-duan Lin, Weng-Tack Wong, Junpeng Shi, Shunyi Chen, Chih-Wei Chao, Chen-ke Hsu
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Patent number: 10785685Abstract: A cloud radio access network system includes remote signal sources, a baseband processing unit pool, an access management server, a software defined network controller and a network signal forwarder. Each remote signal source is configured to transmit an access signal. The baseband processing unit pool provides a baseband processing signal. The access management server provides an access state signal. Different maximum transmission rates are transmitted via the access state signal. When the baseband processing unit pool has authenticated one remote signal source, the baseband processing unit pool transmits an authentication notification signal to the access management server. Then, the access management server informs the software defined network controller according to the authentication notification signal to increase an upper limit of a signal transmission rate between the baseband processing unit pool and the authenticated remote signal source to a higher one of the maximum transmission rates.Type: GrantFiled: December 12, 2018Date of Patent: September 22, 2020Assignee: ALPHA NETWORKS INC.Inventors: Chih-Wei Chao, Li-Chung Hsu, Yu-Hsin Kuo, Po-Wei Shih, Shih-Chi Lee
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Publication number: 20200279838Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.Type: ApplicationFiled: May 19, 2020Publication date: September 3, 2020Inventors: Shunyi CHEN, Junpeng SHI, Weng-Tack WONG, Chen-ke HSU, Chih-Wei CHAO