Abstract: An electronic package is provided, including a circuit portion, an electronic element disposed on the circuit portion and a lid member disposed on the circuit portion to cover the electronic element. A separation portion is formed between the lid member and the electronic element. The lid member facilitates to prevent warping of the overall package structure. The invention further provides a method for fabricating the electronic package.

Abstract: A method for fabricating an electronic package is provided, which includes the steps of: providing a substrate having a cavity and a first via hole; disposing an electronic element in the cavity; forming a dielectric layer on the substrate and the electronic element; forming a circuit layer on the dielectric layer and forming a first conductive portion in the first via hole; forming on the substrate a second via hole communicating with the first via hole, the first and second via holes constituting a through hole; and forming a second conductive portion in the second via hole, the first and second conductive portions constituting a conductor. Since the through hole is formed through a two-step process, the invention can reduce the depth of the via holes and therefore perform laser drilling or etching processes with reduced energy, thereby avoiding damage of the conductive portions and improving the product reliability.

Abstract: A semiconductor package is provided, including: an insulating base body having a first surface with an opening and a second surface opposite to the first surface; an insulating extending body extending outward from an edge of the first surface of the insulating base body, wherein the insulating extending body is less in thickness than the insulating base body; an electronic element having opposite active and inactive surfaces and disposed in the opening with its inactive surface facing the insulating base body; a dielectric layer formed in the opening of the insulating base body and on the first surface of the insulating base body, the insulating extending body and the active surface of the electronic element; and a circuit layer formed on the dielectric layer and electrically connected to the electronic element. The configuration of the insulating layer of the invention facilitates to enhance the overall structural rigidity of the package.

Abstract: The present invention provides a semiconductor structure and a method of fabricating the same. The semiconductor structure includes a carrier, a semiconductor chip and an encapsulant. The semiconductor chip is disposed on the carrier, and has opposing non-active and active surfaces. The non-active surface is coupled to the carrier, and the active surface has a plurality of metallic pillars formed thereon. A under bump metallogy layer is formed between the metallic pillars and the active surface and on side surfaces of the metal pillars. The surface of the encapsulant is flush with end surfaces of the metallic pillars. Therefore, the product yield is increased significantly.

Abstract: A method for fabricating a package structure is provided, which includes the steps of: providing a carrier having a recess; disposing an electronic element in the recess of the carrier; forming an insulating layer in the recess to encapsulate the electronic element; forming a circuit structure on the carrier, wherein the circuit structure is electrically connected to the electronic element; forming a plurality of through holes penetrating the carrier; and forming a conductive material in the through holes to form a plurality of conductors, wherein the conductors are electrically connected to the circuit structure. By using the carrier as a substrate body, the present invention avoids warping of the package structure.

Abstract: An interposer is provided, including a substrate body, a plurality of conductive posts formed in the substrate body, and a plurality of conductive pads formed on the substrate body and electrically connected to the conductive posts. The conductive pads and the conductive posts are integrally formed. As such, no interface is formed between the conductive pads and the conductive posts, thereby preventing delamination or cracking from occurring between the conductive pads and the conductive posts.

Abstract: A method of manufacturing an interposer is provided, including forming a plurality of first openings on one surface side of a substrate, forming a first metal layer in the first openings, forming on the other surface side of the substrate a plurality of second openings that are in communication with the first openings, forming a second metal layer in the second openings, and electrically connecting the first metal layer to the second metal layer, so as to form conductive through holes. The conductive through holes are formed stage by stage, such that the fabrication time in forming the metal layers is reduced, and a metal material will not be accumulated too thick on a surface of the substrate. Therefore, the metal material has a smoother surface, and no overburden will be formed around end surfaces of the through holes. An interposer is also provided.

Abstract: A method of manufacturing an interposer is provided, including forming a plurality of first openings on one surface side of a substrate, forming a first metal layer in the first openings, forming on the other surface side of the substrate a plurality of second openings that are in communication with the first openings, forming a second metal layer in the second openings, and electrically connecting the first metal layer to the second metal layer, so as to form conductive through holes. The conductive through holes are formed stage by stage, such that the fabrication time in forming the metal layers is reduced, and a metal material will not be accumulated too thick on a surface of the substrate. Therefore, the metal material has a smoother surface, and no overburden will be formed around end surfaces of the through holes. An interposer is also provided.