Abstract: Hybrid silicon-carbon nanostructured electrodes are fabricated by forming a suspension including carbon nanostructures and a fluid, disposing the suspension on a substrate, removing at least some of the fluid from the suspension to form a carbon nanostructure layer on the substrate, and sputtering a layer of silicon over the carbon nanostructure layer to form the hybrid silicon-carbon nanostructured electrode. Sputtering the layer of silicon facilitates fabrication of large dimension electrodes at room temperature. The hybrid silicon-carbon nanostructured electrode may be used as an anode in a rechargeable battery, such as a lithium ion battery.

Abstract: Nanowires are formed in a process including fluidized bed catalytic vapor deposition. The process may include contacting a gas-phase precursor including a metal or a semiconductor with a catalyst in a reaction chamber under conditions suitable for growth of nanowires including the metal or the semiconductor. The reaction chamber includes a support. The support can be, for example, a particulate support or a product vessel in the fluidized bed reactor. Nanowires are formed on the support in response to interaction between the gas-phase precursor and the catalyst. The nanowire-laden support is removed from the reaction chamber, and the nanowires are separated from the support. An anode or a lithium-ion battery may include nanowires formed in a fluidized bed reactor.

Abstract: An electrochemical capacitor includes a first electrode including a first flexible substrate, a second electrode including a second flexible substrate, and an electrolyte. The first electrode includes a first layer of single-walled carbon nanotubes inkjetted on the first flexible substrate and a layer of first nanowires disposed on the first layer of single-walled carbon nanotubes. The second electrode includes a second layer of single-walled carbon nanotubes inkjetted on the second flexible substrate and a layer of second nanowires disposed on the second layer of single-walled carbon nanotubes. The electrolyte is sandwiched between the layer of first nanowires and the layer of second nanowires to form the electrochemical capacitor. A flexible energy storage device includes a first flexible substrate, a second flexible substrate, and one or more electrochemical capacitors formed between the first flexible substrate and the second flexible substrate. The flexible energy storage device can be wearable.

Abstract: An asymmetric electrochemical capacitor including an anode, a cathode, and an electrolyte between the anode and the cathode. The anode includes manganese dioxide (MnO2) nanowires and single-walled carbon nanotubes. The cathode includes indium oxide (In2O3) nanowires and single-walled carbon nanotubes. The asymmetrical electrochemical capacitor can be fabricated by forming a first film including manganese dioxide nanowires and single-walled carbon nanotubes, forming a second film including indium oxide nanowires and single-walled carbon nanotubes, and providing an electrolyte between the first film and the second film such that the electrolyte is in contact with the first film and the second film.

Abstract: The present invention describes microfluidics being employed to achieve multiplex surface functionalization of nanosensor chips by selectively delivering probe molecules to individual nanosensors in an array, and microfluidics being employed to achieve delivery of a solution containing multiple analytes over individual nanosensors in an array, where each nanosensor was previously configured with a specific capture molecule.

Abstract: Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.

Abstract: Methods, materials, systems and apparatus are described for depositing a separated nanotube networks, and fabricating, separated nanotube thin-film transistors and N-type separated nanotube thin-film transistors. In one aspect, a method of depositing a wafer-scale separated nanotube networks includes providing a substrate with a dielectric layer. The method includes cleaning a surface of the wafer substrate to cause the surface to become hydrophilic. The cleaned surface of the wafer substrate is functionalized by applying a solution that includes linker molecules terminated with amine groups. High density, uniform separated nanotubes are assembled over the functionalized surface by applying to the functionalized surface a separated nanotube solution that includes semiconducting nanotubes.

Abstract: Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diodes (AMOLED) displays. In one implementation, a method of fabricating n-type dopant-doped metal oxide nanowires includes dispersing nanoparticle catalysts on a Si/SiO2 substrate. n-type dopant-doped metal oxide nanowires are grown on the Si/SiO2 substrate using a laser ablation process.

Abstract: Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.

Abstract: An electrode for use in an organic optoelectronic device is provided. The electrode includes a thin film of single-wall carbon nanotubes. The film may be deposited on a substrate of the device by using an elastomeric stamp. The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity. Electrodes according to the present invention may have conductivities, transparencies, and other features comparable to other materials typically used as electrodes in optoelectronic devices.

Abstract: The present invention relates to various methods of detecting DNA methylation and defected DNA. In one embodiment, the invention provides a nanosensor bound to a probe that is complementary to a DNA methylation sequence.

Abstract: An electrode for use in an organic optoelectronic device is provided. The electrode includes a thin film of single-wall carbon nanotubes. The film may be deposited on a substrate of the device by using an elastomeric stamp. The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity. Electrodes according to the present invention may have conductivities, transparencies, and other features comparable to other materials typically used as electrodes in optoelectronic devices.

Abstract: The present invention relates to the use of nanowires, nanotubes and nanosensor platforms. In one embodiment, the present invention provides a method of constructing a nanosensor platform. In another embodiment, the present invention provides a method of analyzing multiple biomarker signals on a nanosensor platform for the detection of a disease.

Abstract: The present invention relates to various methods of sensitizing and modifying nanosensor platforms. In one embodiment, the present invention provides a method of increasing sensitivity by inhibiting oxidation of one or more 1,4-hydroquinone (HQ) molecules, functionalizing the nanosensor by using one or more diazonium molecules, creating one or more oxidized carbon groups on the nanosensor, and/or depositing one or more metal clusters on the nanosensor.

Abstract: Among others, techniques are described for forming nanotubes. In one aspect, a method includes forming a base layer of a transition metal on a substrate. The method also includes heating the substrate with the base layer in a mixture of gases to grow nanotubes on the base layer.

Abstract: The present invention relates to the calibration of devices using a secondary binding agent or reference material. In one embodiment, the present invention provides a method of calibrating a nanosensor by providing a nanosensor comprising an analyte binder attached to a reference binder, extracting a calibration curve from binding a reference material to the reference binder, and calibrating the nanosensor by using the calibration curve to correct for device variation.

Abstract: Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes.

Abstract: Methods and devices for transparent electronics are disclosed. According to an embodiment, transparent electronics are provided based on transfer printed carbon nanotubes that can be disposed on both rigid and flexible substrates. Methods are provided to enable highly aligned single-walled carbon nanotubes (SWNTs) to be used in transparent electronics for achieving high carrier mobility while using low-temperature processing. According to one method, highly aligned nanotubes can be grown on a first substrate. Then, the aligned nanotubes can be transferred to a rigid or flexible substrate having pre-patterned gate electrodes. Source and drain electrodes can be formed on the transferred nanotubes. The subject devices can be integrated to provide logic gates and analog circuitry for a variety of applications.

Abstract: Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sensed, and used to determine either the presence of the materials and/or the concentration of the materials. The nanowires may be between 10 and 30 nm in diameter, formed using a comparable size particle of catalyst material. The nanowires may then be used as part of the channel of a field effect transistor, and the field effect transistor is itself characterized.

Abstract: Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.