Patents by Inventor Chongwu Zhou

Chongwu Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080261342
    Abstract: Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sensed, and used to determine either the presence of the materials and/or the concentration of the materials. The nanowires may be between 10 and 30 nm in diameter, formed using a comparable size particle of catalyst material. The nanowires may then be used as part of the channel of a field effect transistor, and the field effect transistor is itself characterized.
    Type: Application
    Filed: July 1, 2008
    Publication date: October 23, 2008
    Inventor: Chongwu Zhou
  • Patent number: 7394118
    Abstract: Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sensed, and used to determine either the presence of the materials and/or the concentration of the materials. The nanowires may be between 10 and 30 nm in diameter, formed using a comparable size particle of catalyst material. The nanowires may then be used as part of the channel of a field effect transistor, and the field effect transistor is itself characterized.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: July 1, 2008
    Assignee: University of Southern California
    Inventor: Chongwu Zhou
  • Publication number: 20080018232
    Abstract: An electrode for use in an organic optoelectronic device is provided. The electrode includes a thin film of single-wall carbon nanotubes. The film may be deposited on a substrate of the device by using an elastomeric stamp. The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity. Electrodes according to the present invention may have conductivities, transparencies, and other features comparable to other materials typically used as electrodes in optoelectronic devices.
    Type: Application
    Filed: July 18, 2007
    Publication date: January 24, 2008
    Inventors: Daihua Zhang, Koungmin Ryu, Xiaolei Liu, Evgueni Polikarpov, James Ly, Mark Thompson, Chongwu Zhou, Cody Schlenker
  • Publication number: 20050247961
    Abstract: Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sensed, and used to determine either the presence of the materials and/or the concentration of the materials. The nanowires may be between 10 and 30 nm in diameter, formed using a comparable size particle of catalyst material. The nanowires may then be used as part of the channel of a field effect transistor, and the field effect transistor is itself characterized.
    Type: Application
    Filed: March 9, 2005
    Publication date: November 10, 2005
    Inventor: Chongwu Zhou