Abstract: In a packetized memory device, row and column address paths receive row and column addresses from an address capture circuit. Each of the row and column address paths includes a respective address latch that latches the row or column address from the address capture circuitry, thereby freeing the address capture circuitry to capture a subsequent address. The latched row and column addresses are then provided to a combining circuit. Additionally, redundant row and column circuits receive these latched addresses and indicate to the combining circuit whether or not to substitute a redundant row. The combining circuit, responsive to a strobe then transfers the redundant row address or latched row address to a decoder to activate the array.

Abstract: A lead frame assembly including at least two layers. A first of the lead frame layers includes a first wide, electrically conductive bus and a plurality of leads that extend substantially unidirectionally from a single edge of the lead frame assembly. The second lead frame layer includes a second wide, electrically conductive bus that is superimposed over the first bus and a plurality of lead fingers extending substantially unidirectionally from a single edge of the lead frame assembly. Preferably, the lead fingers of both the first and second layers extend in substantially the same direction. An insulator element is disposed between the first and second buses. One of the buses is connectable to a power supply source (VCC), while the other is connectable to a power supply ground (VSS). Thus, the co-extensive portions of the first and second buses form a decoupling capacitor.

Abstract: A test socket for testing a packaged semiconductor device. The test socket includes a test substrate, at least one support member, and at least one securing member. Terminals of the test substrate are electrically connectable to a testing device. The terminals may by located within recesses that are configured to receive leads. The shapes of each support member and securing member may be complementary to the respective shapes of the bottom and top surfaces of leads extending from the packaged semiconductor device. Upon placement of a packaged semiconductor device on the test substrate, the leads are aligned with and positioned against their corresponding terminals and the support member. The securing elements are then placed against the leads to bias each lead against its corresponding terminal.

Abstract: A technique for shifting the phase of a periodic signal. A periodic signal, such as a clock signal, may be provided in a synchronous system, such as a memory system implementing a Synchronous Dynamic Random Access Memory (SDRAM) device. It may be advantageous to be able to phase shift the signal. The present technique implements a delay line which includes a plurality of delay elements coupled in series. The periodic signal is delivered to the delay line and the time between transitions from high to low or low to high is stored in one of a number of latches coupled to the delay line at various points. A number of tapping elements are also coupled to the delay line at some incremental point corresponding to a correlative latch. By varying the proximity of each tapping element and corresponding latch along the delay line, various phase shifts of the periodic signal can be produced.

Abstract: The read latency of a plurality of memory devices in a high speed synchronous memory subsystem is equalized through the use of at least one flag signal. The flag signal has equivalent signal propagation characteristics read clock signal, thereby automatically compensating for the effect of signal propagation. After detecting the flag signal, a memory device will begin outputting data associated with a previously received read command in a predetermined number of clock cycles. For each of the flag signal, the memory controller, at system initialization, determines the required delay between issuing a read command and issuing the flag signal to equalize the system read latencies. The delay(s) are then applied to read transactions during regular operation of the memory system.

Abstract: The read latency of a plurality of memory devices in a high speed synchronous memory subsystem is equalized through the use of at least one flag signal. The flag signal has equivalent signal propagation characteristics read clock signal, thereby automatically compensating for the effect of signal propagation. After detecting the flag signal, a memory device will begin outputting data associated with a previously received read command in a predetermined number of clock cycles. For each of the flag signal, the memory controller, at system initialization, determines the required delay between issuing a read command and issuing the flag signal to equalize the system read latencies. The delay(s) are then applied to read transactions during regular operation of the memory system.

Abstract: A data capture circuit for an integrated circuit is disclosed which includes providing respective data paths between a latch and clock terminal and a latch and an associated data terminal, the length of each of the paths for a given latch device being approximately equal.

Abstract: An antifuse detection circuit is described which uses a latching circuit and two antifuses. The antifuses are coupled between the latch circuit and ground. The latching circuit described is a differential circuit which can detect which one of the two antifuses has been programmed. The circuit accurately detects an antifuse which has a relatively high resistance after being programmed.

Abstract: A test socket for testing a packaged semiconductor device. The test socket includes a test substrate, at least one support member, and at least one securing member. Terminals of the test substrate are electrically connectable to a testing device. The terminals may by located within recesses that are configured to receive leads. The shapes of each support member and securing member may be complementary to the respective shapes of the bottom and top surfaces of leads extending from the packaged semiconductor device. Upon placement of a packaged semiconductor device on the test substrate, the leads are aligned with and positioned against their corresponding terminals and the support member. The securing elements are then placed against the leads to bias each lead against its corresponding terminal.

Abstract: In a packetized memory device, row and column address paths receive row and column addresses from an address capture circuit. Each of the row and column address paths includes a respective address latch that latches the row or column address from the address capture circuitry, thereby freeing the address capture circuitry to capture a subsequent address. The latched row and column addresses are then provided to a combining circuit. Additionally, redundant row and column circuits receive these latched addresses and indicate to the combining circuit whether or not to substitute a redundant row. The combining circuit, responsive to a strobe then transfers the redundant row address or latched row address to a decoder to activate the array.

Abstract: An attenuating circuit for reducing the inductively induced voltage transients in an electrical signal. The attenuating circuit is formed by a primary circuit and a smoothing circuit both coupled to a voltage source through an inductive conductor. The primary circuit operates in two states having a first and second current draw, respectively. The smoothing circuit also has a first and second state and a first and second current draw, respectively. The current draws of the primary circuit and the smoothing circuit are such that the total current draw on the voltage source through the inductive conductor maintains relatively constant regardless of the state that the primary circuit is in, thus minimizing any induced voltage transients as a result of the conductor's inductance.

Abstract: An attenuating circuit for reducing the inductively induced voltage transients in an electrical signal. The attenuating circuit is formed by a primary circuit and a smoothing circuit both coupled to a voltage source through an inductive conductor. The primary circuit operates in two states having a first and second current draw, respectively. The smoothing circuit also has a first and second state and a first and second current draw, respectively. The current draws of the primary circuit and the smoothing circuit are such that the total current draw on the voltage source through the inductive conductor maintains relatively constant regardless of the state that the primary circuit is in, thus minimizing any induced voltage transients as a result of the conductor's inductance.

Abstract: An antifuse detection circuit is described which uses a latching circuit and two antifuses. The antifuses are coupled between the latch circuit and ground. The latching circuit described is a differential circuit which can detect which one of the two antifuses has been programmed. The circuit accurately detects an antifuse which has a relatively high resistance after being programmed.

Abstract: A test socket for testing a packaged semiconductor device. The test socket includes a test substrate, at least one support member, and at least one securing member. Terminals of the test substrate are electrically connectable to a testing device. The terminals may by located within recesses that are configured to receive leads. The shapes of each support member and securing member may be complementary to the respective shapes of the bottom and top surfaces of leads extending from the packaged semiconductor device. Upon placement of a packaged semiconductor device on the test substrate, the leads are aligned with and positioned against their corresponding terminals and the support member. The securing elements are then placed against the leads to bias each lead against its corresponding terminal.

Abstract: A test socket for testing a packaged semiconductor device. The test socket includes a test substrate, at least one support member, and at least one securing member. Terminals of the test substrate are electrically connectable to a testing device. The terminals may by located within recesses that are configured to receive leads. The shapes of each support member and securing member may be complementary to the respective shapes of the bottom and top surfaces of leads extending from the packaged semiconductor device. Upon placement of a packaged semiconductor device on the test substrate, the leads are aligned with and positioned against their corresponding terminals and the support member. The securing elements are then placed against the leads to bias each lead against its corresponding terminal.

Abstract: A memory device having a first set of programmable elements programmed to store an address of a column having a bad memory cell, and a second set of programmable elements programmed to store a segment-in-time (SIT) of the bad memory cell, the SIT of the bad memory cell indicating a relative position of the bad memory cell within a plurality of memory cells being accessed in a memory access. The SIT allows the memory device to selectively repair a bad memory cell within a column of memory cells accessed during a memory operation.

Abstract: An attenuating circuit for reducing the inductively induced voltage transients in an electrical signal. The attenuating circuit is formed by a primary circuit and a smoothing circuit both coupled to a voltage source through an inductive conductor. The primary circuit operates in two states having a first and second current draw, respectively. The smoothing circuit also has a first and second state and a first and second current draw, respectively. The current draws of the primary circuit and the smoothing circuit are such that the total current draw on the voltage source through the inductive conductor maintains relatively constant regardless of the state that the primary circuit is in, thus minimizing any induced voltage transients as a result of the conductor's inductance.

Abstract: A method for storing a temperature threshold in an integrated circuit includes measuring operating parameters of the integrated circuit versus temperature, calculating a maximum temperature at which the integrated circuit performance exceeds predetermined specifications and storing parameters corresponding to the maximum temperature in a comparison circuit in the integrated circuit by selectively blowing fusable devices in the comparison circuit. The fusable devices may be antifuses. As a result, the integrated circuit is able to provide signals to devices external to the integrated circuit to indicate that the integrated circuit may be too hot to operate properly.

Abstract: A test socket for testing a vertical surface mount packaged semiconductor device, the test socket including a test substrate, a support member, and clamps. The test substrate includes terminals which are electrically connectable to a testing device. The shape of the support member is complementary to the shape of the bottom surface of leads extending from the vertical surface mount packaged semiconductor device. The shape of the clamps is complementary to the top surface of the leads. The test substrate may also define lead alignment notches around one or more of the terminals. Upon placement of a vertical surface mount packaged semiconductor device on the test substrate, the leads are aligned with their corresponding terminals, then placed against the terminals and the support member. The clamps are then placed against the leads, biasing each of the leads against the support member and its corresponding terminal.

Abstract: A method for storing a temperature threshold in an integrated circuit includes measuring operating parameters of the integrated circuit versus temperature, calculating a maximum temperature at which the integrated circuit performance exceeds predetermined specifications and storing parameters corresponding to the maximum temperature in a comparison circuit in the integrated circuit by selectively blowing fusable devices in the comparison circuit. The fusable devices may be antifuses. As a result, the integrated circuit is able to provide signals to devices external to the integrated circuit to indicate that the integrated circuit may be too hot to operate properly.