Abstract: A micromechanical sensor device and a corresponding production method include a substrate that has a front and a rear and a plurality of pillars that are formed on the front of the substrate. On each pillar, a respective sensor element is formed, which has a greater lateral extent than the associated pillar. A cavity is provided laterally to the pillars beneath the sensor elements. The sensor elements are laterally spaced apart from each other by respective separating troughs and make electrical contact with a respective associated rear contact via the respective associated pillar.

Abstract: A method for producing a semiconductor component (166) is proposed.

Abstract: A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

Abstract: A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given (110) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given (110) surface orientation of the silicon layer.

Abstract: A diaphragm structure of a micromechanical component includes: a diaphragm integrated via at least one spring element into a layered structure, the diaphragm spanning a cavern, so that at least one section of the diaphragm edge extends up to and beyond the edge area of the cavern; and an anchoring structure formed in the overlap area between the diaphragm and the cavern edge area. The anchoring structure includes at least one anchor element structured out of the layered structure above the cavern edge area, and one through opening for the anchor element formed in the edge area of the diaphragm, so that there is a clearance between the anchor element and the through opening which allows for a mechanical stress relaxation of the diaphragm.

Abstract: A thermodiode element for a photosensor of a thermocamera usable for infrared radiation measurement includes a semiconductor substrate that has a first layer, and a second layer adjoining the first layer. The first layer has a base doping zone, and the second layer has a side doping zone that is the same doping type as the base doping zone. The second layer also has a further doping zone that is arranged as an island in the side doping zone and that has a doping type that is opposite to the doping type of the base doping zone. The base doping zone is further arranged in the first layer so as to adjoin the further doping zone.

Abstract: A micromechanical sensor system combination, and a corresponding manufacturing method, includes an interposer chip including a first front side and a first back side which includes first electrical contacts on the first front side and second electrical contacts on the first back side, the interposer chip having first electrical vias which electrically connect the first electrical contacts to the second electrical contacts; as well as a micromechanical sensor chip system including a second front side a second back side including at least one first sensor device and a second sensor device which are laterally adjacent, the first front side being attached on the second front side so that the first sensor device and the second sensor device are electrically and mechanically connected to the first electrical contacts.

Abstract: Measures are provided which are used for stabilizing the substructure of the connecting areas of ASIC elements. These measures relate to ASIC elements including an ASIC substrate, into which electrical circuit functions are integrated, and including an ASIC layer structure on the ASIC substrate, which includes multiple wiring levels for the circuit functions, which are separated from one another by insulation layers and are interconnected via metallic plugs. At least one connecting area for placing wire bonds or for wafer bonding is implemented in at least one of the uppermost wiring levels. At least one chain of metallic plugs arranged vertically in a direct line is implemented in the ASIC layer structure below the connecting area, which extends from the uppermost wiring level up to the ASIC substrate or oxide trenches introduced therein.

Abstract: To implement cavities having different internal pressures in joining two semiconductor elements, at least one of the two element surfaces to be joined is structured, so that at least one circumferential bonding frame area is recessed or elevated in comparison with at least one other circumferential bonding frame area. At least one connecting layer should then be applied to this structured element surface and at least two circumferential bonding frames should be structured out of this connecting layer on different surface levels of the element surface. The topography created in the element surface permits sequential bonding in which multiple cavities between the two elements may be successively hermetically sealed, so that a defined internal pressure prevails in each of the cavities.

Abstract: A method for producing a multi-layer electrode system includes providing a carrier substrate having a recess in a top side of the carrier substrate. At least one wall of the recess is inclined in relation to a bottom side of the carrier substrate, which is opposite to the top side. The method also includes applying a multi-layer stack, which includes at least a first electrode layer, a second electrode layer, and a piezoelectric layer arranged between the first electrode layer and the second electrode layer, to the top side of the carrier substrate. At least the wall and a bottom of the recess are covered by at least a portion of the multi-layer stack.

Abstract: A manufacturing method is described for a micromechanical component and a corresponding micromechanical component. The manufacturing method includes the steps: forming at least one crystallographically modified area in a substrate; forming an etching mask having a mask opening on a main surface of the substrate; and carrying out an etching step using the etching mask, the crystallographically modified area and a surrounding area of the substrate being removed and thus forming a cavern in the substrate.

Abstract: A packaging concept for MEMS components having at least one diaphragm structure formed in the front side of the component is provided, according to which the MEMS component is mounted on a support which at least laterally delimits a cavity adjoining the diaphragm structure. In addition, at least one electrical feedthrough is formed in the support which allows electrical contacting of the MEMS component through the support. To achieve the largest possible rear volume for the diaphragm structure of the MEMS component for a given chip surface area, and also to simplify the processing of the support, according to the invention the electrical feedthroughs are integrated into the wall of the cavity adjoining the diaphragm structure, in that at least one section of such a feedthrough is implemented in the form of an electrically conductive coating of a side wall section of the cavity.

Abstract: An MEMS component includes at least one metal-ceramic multilayer stack as a mechanical functional layer in the layered structure of the MEMS component. The metal-ceramic multilayer stack functions as a mechanical functional layer in which at least one component of the micromechanical structure of the MEMS component is configured.

Abstract: A concept is provided for the cost-effective and space-saving implementation of multisensor modules having a high-quality acoustic microphone function and having at least one further sensor function which requires a media application. A component of this type includes at least one MEMS microphone element which is mounted inside a housing across at least one sound opening formed in the housing wall so that the sound pressure application of the microphone structure of the MEMS microphone element takes place via this sound opening and the housing interior functions as the back side volume for the microphone structure. At least one leakage path is formed in the microphone structure for a slow pressure equalization between the front side and the back side of the microphone structure. At least one further MEMS sensor element is situated within the housing, whose sensor function requires a media application.

Abstract: A capacitive MEMS microphone structure is provided, which micromechanical microphone structure of component is realized in a layer construction and includes: a diaphragm structure sensitive to sound pressure, which is deflectable in a direction perpendicular to the layer planes of the layer construction; an acoustically penetrable counter-element which has through holes and is formed above or below the diaphragm structure in the layer construction; and a capacitor system for detecting the excursions of the diaphragm structure. The diaphragm structure includes a structural element in the middle area of the diaphragm structure, which structural element projects perpendicularly from the diaphragm plane and which, depending on the degree of excursion of the diaphragm structure, variably extends into a correspondingly formed and positioned through hole in the counter-element.

Abstract: A microelectronic component includes a semiconductor substrate having a top side and a reverse side, an elastically movable mass device on the top side of the substrate, at least one source region provided in or on the mass device, at least one drain region provided in or on the mass device, and a gate region suspended on a conductor track arrangement above the at least one source region and at least one drain region and spaced apart from the mass device by a gap. The conductor track arrangement is anchored on the top side of the substrate in a periphery of the mass device such that the gate region remains fixed when the mass device has been moved.

Abstract: A micromechanical microphone structure configured as a layered structure includes: a semiconductor substrate; a diaphragm structure having an acoustically active diaphragm which at least partially spans a sound opening in the back side of the substrate and is provided with a movable electrode of a microphone capacitor, which diaphragm structure has openings via which pressure compensation occurs between the back side and the front side of the diaphragm; a stationary acoustically permeable counterelement having vents, which counterelement is situated in the layered structure above the diaphragm and which functions as a carrier for a nonmovable electrode of the microphone capacitor; and at least one ridge-like structural element which is situated at the outer edge area of the diaphragm, and which protrudes from the diaphragm plane into corresponding recesses in an adjoining layer.

Abstract: A capacitive MEMS microphone element is described which may be used optionally for detecting acoustic signals (microphone mode) or for detecting ultrasound signals in a defined frequency range (ultrasound mode). In the layered structure of the MEMS microphone element, at least two carrier elements for the two electrode sides of a capacitor system are formed one above the other and at a distance from one another for signal detection. At least one of the two carrier elements is sound pressure-sensitive and at least one of the two electrode sides includes at least two electrode segments which are electrically contactable independent of one another, which together with the at least one electrode of the other electrode side form partial capacitances which are independent of one another.

Abstract: An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.

Abstract: A semiconductor device includes a carrier substrate having at least one conductor track, at least one converter element structured at least partly from a further semiconductor substrate, and conductive structures formed on a respective converter element. The at least one converter element is electrically linked to the at least one conductor track via at least one at least partly conductive supporting element arranged between a contact side of the carrier substrate and an inner side of the converter element. The inner side is oriented toward the carrier substrate. The at least one converter element is arranged on the contact side of the carrier substrate such that the inner side of the converter element is kept spaced apart from the contact side of the carrier substrate. The at least one converter element and the conductive structures formed thereon are completely embedded into at least one insulating material.