Abstract: A method for fault detection in a fabrication facility is provided. The method includes moving a wafer carrier along a predetermined path multiple times using a transportation apparatus. The method also includes collecting data associated with an environmental condition within the wafer carrier or around the wafer carrier using a metrology tool on the predetermined path in a previous movement of the transportation apparatus. The method further includes measuring the environmental condition within the wafer carrier or around the wafer carrier using the metrology tool during the movement of the wafer carrier. In addition, the method includes issuing a warning when the measured environmental condition is outside a range of acceptable values. The range of acceptable values is derived from the data collected in the previous movement of the transportation apparatus.

Abstract: A motor stator has a core and first, second and third hairpin wires. The core has slots, an insertion side and an extension side. Each first hairpin wire has its first hairpin first leg inserted into a third layer of the slots and its first hairpin second leg inserted into a sixth layer of the slots. Each second hairpin wire has its second hairpin first leg inserted into a fourth layer of the slots and its second hairpin second leg inserted into a fifth layer of the slots. Each third hairpin wire has its third hairpin first leg inserted into a first layer of the slots and its third hairpin second leg inserted into a second layer of the slots. At the extension side, a plurality of immediately-adjacent hairpin legs are connected to form first and second winding sets.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: A method for fault detection in a fabrication facility is provided. The method includes moving a wafer carrier using a transportation apparatus. The method further includes measuring an environmental condition within the wafer carrier or around the wafer carrier using a metrology tool positioned on the wafer carrier during the movement of the wafer carrier. The method also includes issuing a warning when the detected environmental condition is outside a range of acceptable values.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: A gate structure includes a gate dielectric layer over a semiconductor workpiece. The gate structure further includes a work function layer over the gate dielectric layer, wherein the work function layer has a U-shape profile. The gate structure further includes an adhesion layer over the work function layer, wherein a surface of the adhesion layer farthest from the work function layer is substantially free of oxygen atoms. The gate structure further includes a conductive layer over the adhesion layer, wherein the conductive layer has an I-shape profile.

Abstract: A method of making a semiconductor device includes forming an opening in a dielectric layer. The method further includes depositing a barrier layer in the opening. The method further includes depositing an adhesion layer over the barrier layer. The method further includes treating the adhesion layer using a hydrogen-containing plasma.

Abstract: Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.

Abstract: Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.

Abstract: An image sensor includes a substrate having a first region and a second region. The image sensor further includes a dielectric layer over the substrate. The image sensor further includes a conductive layer over the dielectric layer, wherein in the first region the conductive layer has a grid shape and in the second region a portion of the conductive layer is concave toward the substrate. The image sensor further includes a protective layer, wherein the protective layer is over the conductive layer in the first region, and over a top surface and along sidewalls of the conductive layer in the second region.

Abstract: A method of fabricating a semiconductor structure includes depositing a dielectric layer over a gate stack, removing a portion of the gate stack to form a trench in the dielectric layer, depositing an insulating layer in the trench, depositing an adhesion layer over the insulating layer, and performing a hydrogen-containing plasma treatment on the adhesion layer.

Abstract: An exhaust structure includes an intake section which includes an inlet, an output section which includes an outlet, and a piping section coupled to the intake section and the output section at a section interface. The piping section includes a first inner diameter from the intake section to the output section, wherein one of the intake section or the output section has a second inner diameter at the section interface. The second inner diameter includes a same value as a value of the first inner diameter. A plurality of smoothing layers are configured to resist turbulence and condensation produced by a flow of one or more gasses in the intake section, the output section, and the piping section.

Abstract: A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension. The first lateral dimension is greater than, or equal to, the second lateral dimension. The dummy gate electrode is replaced with a metal gate electrode.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: An exhaust structure includes an intake section including a first high thermal conductivity material, the intake section having an inlet, an output section including a second high thermal conductivity material, the output section having an outlet, and a piping section including a third high thermal conductivity material, the piping section being configured to communicatively couple the intake section with the output section. The exhaust structure provides a high thermal conductivity path from the inlet to the outlet, the high thermal conductivity path including the first high thermal conductivity material, the second high thermal conductivity material, and the third high thermal conductivity material.

Abstract: The present disclosure describes an bonding pad formation method that incorporates an tantalum (Ta) conductive layer to block mobile ionic charges generated during the aluminum-copper (AlCu) metal fill deposition. For example, the method includes forming one or more interconnect layers over a substrate and forming a dielectric over a top interconnect layer of the one or more interconnect layers. A first recess is formed in the dielectric to expose a line or a via from the top interconnect layer. A conductive layer is formed in the first recess to form a second recess that is smaller than the first recess. A barrier metal layer is formed in the second recess to form a third recess that is smaller than the second recess. A metal is formed to fill the third recess.

Abstract: Detection methods for an electroplating process are provided. A detection method includes immersing a substrate into an electrolyte solution to perform an electroplating process. The electrolyte solution includes an additive agent. The detection method also includes immersing a detection device into the electrolyte solution. The detection method further includes applying a first alternating current (AC) voltage or direct current (DC) voltage to the detection device to detect the concentration of the additive agent. In addition, the detection method includes applying a combination of a second AC voltage and a second DC voltage to the detection device to inspect the electrolyte solution. An impurity is detected in the electrolyte solution. The detection method also includes replacing the electrolyte solution containing the impurity with another electrolyte solution.

Abstract: A method for fault detection in a fabrication system is provided. The method includes transferring a reticle carrier containing a reticle from an original position to a destination position. The method further includes detecting environmental condition in the reticle carrier during the transfer of the reticle carrier using a metrology tool that is positioned at the reticle carrier. The method also includes issuing a warning when the detected environmental condition is outside a range of acceptable values.

Abstract: A storage server management system includes a management database for storing rack data and storage server data, wherein the rack data includes rack identifications and coordinates of multiple storage servers and the storage server data includes media access control addresses, model name and rail identifications of the multiple storage servers, multiple racks for containing the multiple storage servers, a dynamic host configuration protocol server for configuring the internet protocol addresses to the multiple storage servers, and a management console for generating a rack location map according to the rack data and the storage server data.

Abstract: A method for fault detection in a fabrication facility is provided. The method includes moving a wafer carrier using a transportation apparatus. The method further includes measuring an environmental condition within the wafer carrier or around the wafer carrier using a metrology tool positioned on the wafer carrier during the movement of the wafer carrier. The method also includes issuing a warning when the detected environmental condition is outside a range of acceptable values.