Patents by Inventor Chun-Hung Liao
Chun-Hung Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11697183Abstract: A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.Type: GrantFiled: June 27, 2019Date of Patent: July 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: An-Hsuan Lee, Ming-Shiuan She, Chen-Hao Wu, Chun-Hung Liao, Shen-Nan Lee, Teng-Chun Tsai
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Patent number: 11688607Abstract: The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.Type: GrantFiled: July 27, 2020Date of Patent: June 27, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chun-Hung Liao, Chung-Wei Hsu, Tsung-Ling Tsai, Chen-Hao Wu, An-Hsuan Lee, Shen-Nan Lee, Teng-Chun Tsai, Huang-Lin Chao
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Publication number: 20230058800Abstract: The method includes receiving a semiconductor device having a first surface and a second surface. The first surface is a top surface including a conductive material exposed thereon; and the second surface is an embedded surface including the conductive material and a dielectric material. The method also includes selecting a first polishing slurry to achieve a first polishing rate of the conductive material in the first polishing slurry and a second polishing rate of the dielectric material in the first polishing slurry. The method further includes selecting a second polishing slurry to achieve a third polishing rate of the conductive material in the second polishing slurry and a fourth polishing rate of the dielectric material in the second polishing slurry. The method additionally includes polishing the first surface with the first polishing slurry until the second surface is exposed; and polishing the second surface with the second polishing slurry.Type: ApplicationFiled: November 7, 2022Publication date: February 23, 2023Inventors: An-Hsuan Lee, Chun-Hung Liao, Chen-Hao Wu, Shen-Nan Lee, Teng-Chun Tsai, Huang-Lin Chao
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Publication number: 20230021172Abstract: The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.Type: ApplicationFiled: July 16, 2021Publication date: January 19, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hung LIAO, Chen-Hao Wu, An-Hsuan Lee, Huang-Lin Chao
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Patent number: 11525072Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.Type: GrantFiled: February 15, 2021Date of Patent: December 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: An-Hsuan Lee, Shen-Nan Lee, Chen-Hao Wu, Chun-Hung Liao, Teng-Chun Tsai, Huang-Lin Chao
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Patent number: 11495471Abstract: A semiconductor substrate has an exposed surface having a compositionally uniform metal, and an embedded surface having the metal and an oxide. The exposed surface is polished using a first slurry including a first abrasive and a first amine-based alkaline until the embedded surface is exposed. The embedded surface is polished using a second slurry including a second abrasive and a second amine-based alkaline. The second abrasive is different from the first abrasive. The second amine-based alkaline is different from the first amine-based alkaline. The metal and the oxide each has a first and a second removal rate in the first slurry, respectively, and a third and fourth removal rate in the second slurry, respectively. A ratio of the first removal rate to the second removal rate is greater than 30:1, and a ratio of the third removal rate to the fourth removal rate is about 1:0.5 to about 1:2.Type: GrantFiled: August 12, 2020Date of Patent: November 8, 2022Inventors: An-Hsuan Lee, Chun-Hung Liao, Chen-Hao Wu, Shen-Nan Lee, Teng-Chun Tsai, Huang-Lin Chao
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Publication number: 20220195246Abstract: A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.Type: ApplicationFiled: March 7, 2022Publication date: June 23, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hung Liao, An-Hsuan Lee, Shen-Nan Lee, Teng-Chun Tsai, Chen-Hao Wu, Huang-Lin Chao
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Publication number: 20220157653Abstract: A semiconductor device structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes a source/drain structure formed beside the gate structure. The structure also includes a contact structure formed over the source/drain structure. The structure also includes a dielectric structure extending into the contact structure. The dielectric structure and the source/drain structure are separated by the contact structure.Type: ApplicationFiled: November 13, 2020Publication date: May 19, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hung LIAO, Lin-Yu HUANG, Chia-Hao CHANG, Huang-Lin CHAO
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Patent number: 11286922Abstract: A miniature piezoelectric pump module is provided and includes a piezoelectric pump, a microprocessor, a driving component and a feedback circuit. The piezoelectric pump includes two electrodes and a piezoelectric element and has the best efficiency while operating under an ideal operating voltage. The driving component is electrically connected to the microprocessor and the piezoelectric pump and includes a transform element and an inverting element. The transform element outputs an effective operating voltage to the piezoelectric pump. The inverting element controls the two electrodes to receive the effective operating voltage or to be grounded. The piezoelectric element is subjected to deformation for transporting fluid due to piezoelectric effect. The feedback circuit generates a feedback voltage according to the effective operating voltage.Type: GrantFiled: November 8, 2019Date of Patent: March 29, 2022Assignee: MICROJET TECHNOLOGY CO., LTD.Inventors: Hao-Jan Mou, Shen-Wen Chen, Shih-Chang Chen, Chun-Hung Liao, Chi-Feng Huang, Yung-Lung Han, Chun-Yi Kuo
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Patent number: 11267987Abstract: A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.Type: GrantFiled: March 2, 2020Date of Patent: March 8, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hung Liao, An-Hsuan Lee, Shen-Nan Lee, Teng-Chun Tsai, Chen-Hao Wu, Huang-Lin Chao
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Publication number: 20210332811Abstract: A driving system for driving piezoelectric pump includes one or more mechanical devices and a driving circuit system electrically connected to the at least one mechanical device. The driving circuit system includes a pump-driving unit, a linear voltage-stabilizing unit, a microcontroller unit, a current-sensing unit, and a connection unit.Type: ApplicationFiled: April 20, 2021Publication date: October 28, 2021Inventors: Hao-Jan Mou, Shih-Chang Chen, Che-Wei Huang, Chun-Hung Liao, Wei-Chuan Liao, Chi-Feng Huang, Yung-Lung Han, Tsung-I Lin, Chin-Wen Hsieh
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Publication number: 20210171800Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.Type: ApplicationFiled: February 15, 2021Publication date: June 10, 2021Inventors: An-Hsuan Lee, Shen-Nan Lee, Chen-Hao Wu, Chun-Hung Liao, Teng-Chun Tsai, Huang-Lin Chao
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Publication number: 20210130650Abstract: A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.Type: ApplicationFiled: March 2, 2020Publication date: May 6, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hung Liao, An-Hsuan Lee, Shen-Nan Lee, Teng-Chun Tsai, Chen-Hao Wu, Huang-Lin Chao
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Publication number: 20210098283Abstract: A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.Type: ApplicationFiled: November 20, 2020Publication date: April 1, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shen-Nan LEE, Teng-Chun TSAI, Chen-Hao WU, Chu-An LEE, Chun-Hung LIAO, Tsung-Ling TSAI
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Publication number: 20210098266Abstract: A semiconductor substrate has an exposed surface having a compositionally uniform metal, and an embedded surface having the metal and an oxide. The exposed surface is polished using a first slurry including a first abrasive and a first amine-based alkaline until the embedded surface is exposed. The embedded surface is polished using a second slurry including a second abrasive and a second amine-based alkaline. The second abrasive is different from the first abrasive. The second amine-based alkaline is different from the first amine-based alkaline. The metal and the oxide each has a first and a second removal rate in the first slurry, respectively, and a third and fourth removal rate in the second slurry, respectively. A ratio of the first removal rate to the second removal rate is greater than 30:1, and a ratio of the third removal rate to the fourth removal rate is about 1:0.5 to about 1:2.Type: ApplicationFiled: August 12, 2020Publication date: April 1, 2021Inventors: An-Hsuan Lee, Chun-Hung Liao, Chen-Hao Wu, Shen-Nan Lee, Teng-Chun Tsai, Huang-Lin Chao
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Patent number: 10964549Abstract: A wafer is polished by performing a chemical reaction to change a property of a first portion of a material layer on the wafer using a first chemical substance. A first rinse is performed to remove the first chemical substance and retard the chemical reaction. A mechanical polishing process is then performed to remove the first portion of the material layer.Type: GrantFiled: February 25, 2019Date of Patent: March 30, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Shen-Nan Lee, Teng-Chun Tsai, Chu-An Lee, Chen-Hao Wu, Chun-Hung Liao, Huang-Lin Chao
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Patent number: 10920105Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.Type: GrantFiled: June 28, 2019Date of Patent: February 16, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: An-Hsuan Lee, Shen-Nan Lee, Chen-Hao Wu, Chun-Hung Liao, Teng-Chun Tsai, Huang-Lin Chao
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Patent number: 10847410Abstract: A method of manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer; removing a portion of the dielectric layer to form an opening exposing a portion of the conductive layer; filling a ruthenium-containing material in the opening and in contact with the dielectric layer; and polishing the ruthenium-containing material using a slurry including an abrasive and an oxidizer selected from the group consisting of hydrogen peroxide (H2O2), potassium periodate (KIO4), potassium iodate (KIO3), potassium permanganate (KMnO4), iron(III) nitrate (FeNO3) and a combination thereof.Type: GrantFiled: September 13, 2018Date of Patent: November 24, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shen-Nan Lee, Teng-Chun Tsai, Chen-Hao Wu, Chu-An Lee, Chun-Hung Liao, Tsung-Ling Tsai
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Publication number: 20200357653Abstract: The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.Type: ApplicationFiled: July 27, 2020Publication date: November 12, 2020Inventors: CHUN-HUNG LIAO, CHUNG-WEI HSU, TSUNG-LING TSAI, CHEN-HAO WU, AN-HSUAN LEE, SHEN-NAN LEE, TENG-CHUN TSAI, HUANG-LIN CHAO
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Publication number: 20200294821Abstract: A post CMP cleaning apparatus is provided. The post CMP cleaning apparatus includes a cleaning stage. The post CMP cleaning apparatus also includes a rotating platen disposed in the cleaning stage, and the rotating platen is configured to hold and rotate a semiconductor wafer. The post CMP cleaning apparatus further includes a vibrating device disposed over the rotating platen. The post CMP cleaning apparatus further includes a solution delivery module disposed near the vibrating device and configured to deliver a cleaning fluid to the semiconductor wafer. The vibrating device is configured to provide the cleaning fluid with a specific frequency which is at least greater than 100 MHz while the rotating platen is rotating the semiconductor wafer, so that particles on the semiconductor wafer are removed by the cleaning fluid.Type: ApplicationFiled: March 14, 2019Publication date: September 17, 2020Inventors: Chen-Hao WU, Chu-An LEE, Chun-Hung LIAO, Shen-Nan LEE, Teng-Chun TSAI, Huang-Lin CHAO, Chih-Hung CHEN