Abstract: The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.

Abstract: A wafer is polished by performing a chemical reaction to change a property of a first portion of a material layer on the wafer using a first chemical substance. A first rinse is performed to remove the first chemical substance and retard the chemical reaction. A mechanical polishing process is then performed to remove the first portion of the material layer.

Abstract: A miniature piezoelectric pump module is provided and includes a piezoelectric pump, a microprocessor, a driving component and a feedback circuit. The piezoelectric pump includes two electrodes and a piezoelectric element and has the best efficiency while operating under an ideal operating voltage. The driving component is electrically connected to the microprocessor and the piezoelectric pump and includes a transform element and an inverting element. The transform element outputs an effective operating voltage to the piezoelectric pump. The inverting element controls the two electrodes to receive the effective operating voltage or to be grounded. The piezoelectric element is subjected to deformation for transporting fluid due to piezoelectric effect. The feedback circuit generates a feedback voltage according to the effective operating voltage.

Abstract: The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.

Abstract: A method of manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer; removing a portion of the dielectric layer to form an opening exposing a portion of the conductive layer; filling a ruthenium-containing material in the opening and in contact with the dielectric layer; and polishing the ruthenium-containing material using a slurry including an abrasive and an oxidizer selected from the group consisting of hydrogen peroxide (H2O2), potassium periodate (KIO4), potassium iodate (KIO3), potassium permanganate (KMnO4), iron(III) nitrate (FeNO3) and a combination thereof.

Abstract: A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.

Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including one or more oxygen molecules, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.

Abstract: A manufacturing method of a recycling nylon fiber includes steps as follows. A nylon fiber waste is provided, wherein the nylon fiber waste is an oiled nylon 6 fiber waste or an oiled nylon 66 fiber waste. A cutting step is performed, wherein a plurality of nylon fiber debris are formed. A washing step is performed, wherein an oil content of the nylon fiber debris is reduced to less than 0.22 wt %. A dehydrating and squeezing step is performed, wherein a plurality of nylon films are formed. A melting and granulating step is performed, wherein a plurality of recycling nylon particles are formed. A melting and spinning step is performed, wherein the recycling nylon fiber is obtained.

Abstract: A preparation method of a deodorizing nylon 6 fiber including providing a fabricating step of deodorizing nylon 6 chips and performing a spinning step. A porous powder of citrate is mixed with a caprolactam powder so as to obtain a raw material of a deodorizing chip. The raw material of the deodorizing chip is ground so as to obtain a size mixture of a deodorizing nylon 6. The size mixture of the deodorizing nylon 6 is polymerized so as to obtain the deodorizing nylon 6 chips. In the spinning step, a spinning material including the deodorizing nylon 6 chips is provided. The spinning material is spun so as to obtain a deodorizing nylon 6 fiber.

Abstract: A field effect transistor (FET) is provided. The active layer of this FET is composed of at least two different amorphous metal oxide semiconductor layer stacked together. Therefore, the two opposite surfaces of the active layer can have different band gap values.

Abstract: Disclosed herein is a thin film transistor, which includes a metal oxide semiconductor layer, an insulating layer, a gate electrode, a source electrode and a drain electrode. The metal oxide semiconductor layer includes a channel region having at least one first region and a second region. The first region has an oxygen vacancy concentration greater than an oxygen vacancy concentration of the second region. The second region surrounds the first region. A method for manufacturing the thin film transistor is disclosed as well.