Abstract: Provided is a substrate structure including a substrate body, electrical contact pads and an insulating protection layer disposed on the substrate body, wherein the insulating protection layer has openings exposing the electrical contact pads, and at least one of the electrical contact pads has at least a concave portion filled with a filling material to prevent solder material from permeating along surfaces of the insulating protection layer and the electric contact pads, thereby eliminating the phenomenon of solder extrusion. Thus, bridging in the substrate structure can be eliminated even when the bump pitch between two adjacent electrical contact pads is small. As a result, short circuits can be prevented, and production yield can be increased.

Abstract: The present invention provides a semiconductor package and a method of fabricating the same, including: placing in a groove of a carrier a semiconductor element having opposing active and non-active surfaces, and side surfaces abutting the active surface and the non-active surface; applying an adhesive material in the groove and around a periphery of the side surfaces of the semiconductor element; forming a dielectric layer on the adhesive material and the active surface of the semiconductor element; forming on the dielectric layer a circuit layer electrically connected to the semiconductor element; and removing a first portion of the carrier below the groove to keep a second portion of the carrier on a side wall of the groove intact for the second portion to function as a supporting member. The present invention does not require formation of a silicon interposer, and therefore the overall cost of a final product is much reduced.

Abstract: A fabrication method of a semiconductor package is disclosed, which includes the steps of: disposing a plurality of first semiconductor elements on an interposer; forming a first encapsulant on the interposer for encapsulating the first semiconductor elements; disposing a plurality of second semiconductor elements on the first semiconductor elements; forming a second encapsulant on the first semiconductor elements and the first encapsulant for encapsulating the second semiconductor elements; and thinning the interposer, thereby reducing the overall stack thickness and preventing warpage of the interposer.

Abstract: A method for fabricating a package structure is provided, which includes: providing a first carrier having a circuit layer thereon; forming a plurality of conductive posts on the circuit layer and disposing at least an electronic element on the first carrier; forming an encapsulant on the first carrier to encapsulate the conductive posts, the circuit layer and the electronic element; and removing the first carrier, thereby dispensing with the conventional hole opening process for forming the conductive posts and hence reducing the fabrication costs.

Abstract: A method for fabricating a conductive via structure is provided, which includes the steps of: forming in an encapsulant a plurality of openings penetrating therethrough; forming a dielectric layer on the encapsulant and in the openings of the encapsulant; forming a plurality of vias in the dielectric layer in the openings of the encapsulant; and forming a conductive material in the vias to thereby form conductive vias. Therefore, by filling the openings having rough wall surfaces with the dielectric layer so as to form the vias having even wall surfaces, the present invention improves the quality of the conductive vias.

Abstract: A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.

Abstract: A method for fabricating a package structure is provided, including the steps of: sequentially forming a metal layer and a dielectric layer on a first carrier, wherein the dielectric layer has a plurality of openings exposing portions of the metal layer; disposing an electronic element on the dielectric layer via an active surface thereof and mounting a plurality of conductive elements of metal balls on the exposed portions of the metal layer; forming an encapsulant on the dielectric layer for encapsulating the electronic element and the conductive elements; removing the first carrier; and patterning the metal layer into first circuits and forming second circuits on the dielectric layer, wherein the second circuits are electrically connected to the electronic element and the first circuits. The invention dispenses with the conventional laser ablation process so as to simplify the fabrication process, save the fabrication cost and increase the product reliability.

Abstract: A semiconductor package is provided, including: a carrier; at least an interposer disposed on the carrier; an encapsulant formed on the carrier for encapsulating the interposer while exposing a top side of the interposer; a semiconductor element disposed on the top side of the interposer; and an adhesive formed between the interposer and the semiconductor element. By encapsulating the interposer with the encapsulant, warpage of the interposer is avoided and a planar surface is provided for the semiconductor element to be disposed thereon, thereby improving the reliability of electrical connection between the interposer and the semiconductor element.

Abstract: A semiconductor package is disclosed, which includes: a carrier having at least an opening; a plurality of conductive traces formed on the carrier and in the opening; a first semiconductor element disposed in the opening and electrically connected to the conductive traces; a second semiconductor element disposed on the first semiconductor element in the opening; and a redistribution layer structure formed on the carrier and the second semiconductor element for electrically connecting the conductive traces and the second semiconductor element. Since the semiconductor elements are embedded and therefore positioned in the opening of the carrier, the present invention eliminates the need to perform a molding process before forming the redistribution layer structure and prevents the semiconductor elements from displacement.

Abstract: A fabrication method of a semiconductor package is disclosed, which includes the steps of: disposing a plurality of first semiconductor elements on an interposer; forming a first encapsulant on the interposer for encapsulating the first semiconductor elements; disposing a plurality of second semiconductor elements on the first semiconductor elements; forming a second encapsulant on the first semiconductor elements and the first encapsulant for encapsulating the second semiconductor elements; and thinning the interposer, thereby reducing the overall stack thickness and preventing warpage of the interposer.

Abstract: A conductive bump structure used to be formed on a substrate having a plurality of bonding pads. The conductive bump structure includes a first metal layer formed on the bonding pads, a second metal layer formed on the first metal layer, and a third metal layer formed on the second metal layer. The second metal layer has a second melting point higher than a third melting point of the third metal layer. Therefore, a thermal compression bonding process is allowed to be performed to the third metal layer first so as to bond the substrate to another substrate, and then a reflow process can be performed to melt the second metal layer and the third metal layer into each other so as to form an alloy portion, thus avoiding cracking of the substrate.

Abstract: A semiconductor package is disclosed, which includes: a carrier having at least an opening; a plurality of conductive traces formed on the carrier and in the opening; a first semiconductor element disposed in the opening and electrically connected to the conductive traces; a second semiconductor element disposed on the first semiconductor element in the opening; and a redistribution layer structure formed on the carrier and the second semiconductor element for electrically connecting the conductive traces and the second semiconductor element. Since the semiconductor elements are embedded and therefore positioned in the opening of the carrier, the present invention eliminates the need to perform a molding process before forming the redistribution layer structure and prevents the semiconductor elements from displacement.

Abstract: A method for fabricating a package structure is provided, which includes: providing a first carrier having a circuit layer thereon; forming a plurality of conductive posts on the circuit layer and disposing at least an electronic element on the first carrier; forming an encapsulant on the first carrier to encapsulate the conductive posts, the circuit layer and the electronic element; and removing the first carrier, thereby dispensing with the conventional hole opening process for forming the conductive posts and hence reducing the fabrication costs.

Abstract: A fabrication method of a semiconductor package is disclosed, which includes the steps of: providing a carrier; disposing at least a semiconductor element on the carrier; forming an encapsulant on the carrier and the semiconductor element for encapsulating the semiconductor element; removing the carrier; disposing a pressure member on the encapsulant; and forming an RDL structure on the semiconductor element and the encapsulant, thereby suppressing internal stresses through the pressure member so as to mitigate warpage on edges of the encapsulant.

Abstract: A method for fabricating a package structure is provided, including the steps of: disposing on a carrier a semiconductor chip having an active surface facing the carrier; forming a patterned resist layer on the carrier; forming on the carrier an encapsulant exposing an inactive surface of the semiconductor chip and a surface of the patterned resist layer; and removing the carrier to obtain a package structure. Thereafter, redistribution layers can be formed on the opposite sides of the package structure, and a plurality of through holes can be formed in the patterned resist layer by drilling, thus allowing a plurality of conductive through holes to be formed in the through holes for electrically connecting the redistribution layers on the opposite sides of the package structure. Therefore, the invention overcomes the conventional drawback of surface roughness of the through holes caused by direct drilling the encapsulant having filler particles.

Abstract: A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.

Abstract: A fabrication method of a semiconductor package is disclosed, which includes the steps of: disposing a plurality of first semiconductor elements on an interposer; forming a first encapsulant on the interposer for encapsulating the first semiconductor elements; disposing a plurality of second semiconductor elements on the first semiconductor elements; forming a second encapsulant on the first semiconductor elements and the first encapsulant for encapsulating the second semiconductor elements; and thinning the interposer, thereby reducing the overall stack thickness and preventing warpage of the interposer.

Abstract: A method for fabricating an electronic package is provided, which includes the steps of: providing an insulating layer having at least an electronic element embedded therein; forming at least a first via hole on one side of the insulating layer; forming a first conductor in the first via hole of the insulating layer; forming on the insulating layer a first circuit structure electrically connected to the electronic element and the first conductor; and forming a second via hole on the other side of the insulating layer, wherein the second via hole communicates with the first via hole. As such, the second via hole and the first via hole constitute a through hole. Since the through hole is fabricated through two steps, the aspect ratio (depth/width) of the through hole can be adjusted according to the practical need so as to improve the process yield.

Abstract: A semiconductor package is provided, which includes: a carrier; a frame having a plurality of openings, wherein the frame is bonded to the carrier and made of a material different from that of the carrier; a plurality of electronic elements disposed in the openings of the frame, respectively; an encapsulant formed in the openings of the frame for encapsulating the electronic elements; and a circuit layer formed on and electrically connected to the electronic elements. By accurately controlling the size of the openings of the frame, the present invention increases the accuracy of positioning of the electronic elements so as to improve the product yield in subsequent processes.

Abstract: A semiconductor package is provided. The semiconductor package includes a semiconductor chip having opposite first and second surfaces; an RDL structure formed on the first surface of the semiconductor chip and having opposite third and fourth surfaces and a plurality of first conductive through holes penetrating the third and fourth surfaces thereof, wherein the RDL structure is formed on the semiconductor chip through the fourth surface thereof and electrically connected to the semiconductor chip through a plurality of first conductive elements, and the third surface of the RDL structure has a redistribution layer formed thereon; a plurality of conductive bumps formed on the redistribution layer; and an encapsulant formed on the first surface of the semiconductor chip for encapsulating the RDL structure, wherein the conductive bumps are embedded in and exposed from the encapsulant. The invention effectively prevents warpage of the semiconductor package and improves the electrical connection significantly.