Patents by Inventor Chun-Yi Yang

Chun-Yi Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10461183
    Abstract: A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: October 29, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsai-Feng Yang, Chih-Heng Shen, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang
  • Publication number: 20190273059
    Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.
    Type: Application
    Filed: May 22, 2019
    Publication date: September 5, 2019
    Inventors: Ming-Hong Chang, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang, Chien-Li Kuo
  • Patent number: 10312207
    Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hong Chang, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang, Chien-Li Kuo
  • Publication number: 20190019770
    Abstract: An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.
    Type: Application
    Filed: January 30, 2018
    Publication date: January 17, 2019
    Inventors: Ming-Hong Chang, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang, Chien-Li Kuo
  • Publication number: 20180151724
    Abstract: A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.
    Type: Application
    Filed: January 29, 2018
    Publication date: May 31, 2018
    Inventors: Tsai-Feng YANG, Chih-Heng SHEN, Chun-Yi YANG, Kun-Ming HUANG, Po-Tao CHU, Shen-Ping WANG
  • Patent number: 9928334
    Abstract: A method for redistribution layer routing is proposed. The method at least comprises inputting information regarding a redistribution layer layout, at least one netlist, and a constraint file. Next, it is creating a concentric-circle model based on the information, the netlist and the constraint file. Subsequently, it is assigning at least one pre-assignment net to at least one redistribution layer according to the concentric-circle model. Finally, the redistribution layer routing is performed.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: March 27, 2018
    Inventors: Bo-Qiao Lin, Ting-Chou Lin, Chun-Yi Yang, Yao-Wen Chang
  • Publication number: 20180032660
    Abstract: A method for redistribution layer routing is proposed. The method at least comprises inputting information regarding a redistribution layer layout, at least one netlist, and a constraint file. Next, it is creating a concentric-circle model based on the information, the netlist and the constraint file. Subsequently, it is assigning at least one pre-assignment net to at least one redistribution layer according to the concentric-circle model. Finally, the redistribution layer routing is performed.
    Type: Application
    Filed: July 29, 2016
    Publication date: February 1, 2018
    Applicant: AnaGlobe Technology, Inc.
    Inventors: Bo-Qiao Lin, Ting-Chou Lin, Chun-Yi Yang, Yao-Wen Chang
  • Patent number: 9882046
    Abstract: A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion are formed having a same doping type and a different doping concentration than the drain rectangular portion.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: January 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsai-Feng Yang, Chih-Heng Shen, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang
  • Patent number: 9608060
    Abstract: A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the semiconductor device. The isolating structure has a roughness surface at a sidewall of the isolating structure, and the roughness surface includes carbon atoms thereon.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: March 28, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chieh Chou, Tsai-Feng Yang, Chun-Yi Yang, Kun-Ming Huang, Shen-Ping Wang, Lieh-Chuan Chen, Po-Tao Chu
  • Publication number: 20170062334
    Abstract: The present disclosure relates to a semiconductor device. A fuse layer is arranged within a first dielectric layer. A bond pad is arranged on the first dielectric layer. A second dielectric layer is arranged along sidewall and upper surfaces of the bond pad. A passivation layer is arranged over the first and second dielectric layers, and the passivation layer having a bond pad opening overlying the bond pad and a fuse opening overlying the fuse layer. The bond pad has a bottom surface that is co-planar with a bottom surface of the passivation layer.
    Type: Application
    Filed: November 14, 2016
    Publication date: March 2, 2017
    Inventors: Tai-I Yang, Chun-Yi Yang, Chih-Hao Lin, Hong-Seng Shue, Ruei-Hung Jang
  • Publication number: 20160225899
    Abstract: A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion are formed having a same doping type and a different doping concentration than the drain rectangular portion.
    Type: Application
    Filed: April 8, 2016
    Publication date: August 4, 2016
    Inventors: Tsai-Feng Yang, Chih-Heng Shen, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang
  • Publication number: 20160133698
    Abstract: A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the semiconductor device. The isolating structure has a roughness surface at a sidewall of the isolating structure, and the roughness surface includes carbon atoms thereon.
    Type: Application
    Filed: November 6, 2014
    Publication date: May 12, 2016
    Inventors: Yu-Chieh CHOU, Tsai-Feng YANG, Chun-Yi YANG, Kun-Ming HUANG, Shen-Ping WANG, Lieh-Chuan CHEN, Po-Tao CHU
  • Patent number: 9312348
    Abstract: A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain region comprises a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion have a same doping type and a different doping concentration than the drain rectangular portion.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: April 12, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsai-Feng Yang, Chun-Yi Yang, Kun-Ming Huang, Shen-Ping Wang, Chih-Heng Shen, Po-Tao Chu
  • Publication number: 20150236107
    Abstract: A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain region comprises a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion have a same doping type and a different doping concentration than the drain rectangular portion.
    Type: Application
    Filed: March 20, 2014
    Publication date: August 20, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsai-Feng YANG, Chun-Yi YANG, Kun-Ming HUANG, Shen-Ping WANG, Chih-Heng SHEN, Po-Tao CHU
  • Patent number: 7838947
    Abstract: During fabrication of a mask read-only memory (ROM) device, a dielectric layer is grown on a substrate. Strip-stacked layers are formed on the dielectric layer, with each strip-stacked layer including a polysilicon and a silicon nitride layer. Source/drain regions are formed in the substrate between the strip-stacked layers, and spacers are then deposited between the strip-stacked layers. The strip-stacked layers are patterned into gates, which are disposed over every code position, with silicon nitride pillars being disposed on the gates. Additional spacers are formed on gate sidewalls. The silicon nitride pillars are removed, exposing the gates. A mask is then formed to cover active code positions, in accordance with the desired programming code. Insulating layers are then deposited through the mask onto the exposed gates. When the mask is removed, word lines are formed, interconnecting the gates without the insulating layers.
    Type: Grant
    Filed: February 22, 2007
    Date of Patent: November 23, 2010
    Assignee: Macronix International Co., Ltd.
    Inventor: Chun-Yi Yang
  • Publication number: 20090088044
    Abstract: An interactive intellectual robotic toy and control method of the same includes a main processor. At least one memory unit connects the main processor for storing motion data and sound data. A control module respectively connects the main processor and a driver module, and the driver module further connects motors. The control module receives the motion data stored in the memory unit under control of the main processor. An audio handling module connects the main processor and a speaker, the audio handling unit receives the sound data stored in the memory unit under control of the main processor. A USB module connects the main processor for renewing the data stored in the memory unit. A RFID module has a reading module connecting the main processor, a first RF antenna connecting the reading module and identification modules, each identification module has a design, a tag with an electronic code corresponding to the design, and a second RF antenna.
    Type: Application
    Filed: October 2, 2007
    Publication date: April 2, 2009
    Applicant: CHENG UEI PRECISION INDUSTRY CO., LTD.
    Inventors: Chun-Yi Yang, Feng-Jen Wang, Shih-Chieh Jang
  • Publication number: 20070172994
    Abstract: During fabrication of a mask read-only memory (ROM) device, a dielectric layer is grown on a substrate. Strip-stacked layers are formed on the dielectric layer, with each strip-stacked layer including a polysilicon and a silicon nitride layer. Source/drain regions are formed in the substrate between the strip-stacked layers, and spacers are then deposited between the strip-stacked layers. The strip-stacked layers are patterned into gates, which are disposed over every code position, with silicon nitride pillars being disposed on the gates. Additional spacers are formed on gate sidewalls. The silicon nitride pillars are removed, exposing the gates. A mask is then formed to cover active code positions, in accordance with the desired programming code. Insulating layers are then deposited through the mask onto the exposed gates. When the mask is removed, word lines are formed, interconnecting the gates without the insulating layers.
    Type: Application
    Filed: February 22, 2007
    Publication date: July 26, 2007
    Inventor: Chun-Yi Yang
  • Patent number: 7192811
    Abstract: During fabrication of a mask read-only memory (ROM) device, a dielectric layer is grown on a substrate. Strip-stacked layers are formed on the dielectric layer, with each strip-stacked layer including a polysilicon and a silicon nitride layer. Source/drain regions are formed in the substrate between the strip-stacked layers, and spacers are then deposited between the strip-stacked layers. The strip-stacked layers are patterned into gates, which are disposed over every code position, with silicon nitride pillars being disposed on the gates. Additional spacers are formed on gate sidewalls. The silicon nitride pillars are removed, exposing the gates. A mask is then formed to cover active code positions, in accordance with the desired programming code. Insulating layers are then deposited through the mask onto the exposed gates. When the mask is removed, word lines are formed, interconnecting the gates without the insulating layers.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: March 20, 2007
    Assignee: Macronix International Co., Ltd.
    Inventor: Chun-Yi Yang
  • Patent number: 6849526
    Abstract: A buried bit line and a fabrication method thereof, wherein the device includes a substrate, a shallow doped region disposed in the substrate, a deep doped region disposed in the substrate below a part of the shallow doped region, wherein the shallow doped region and the deep dope region together form a bit line of the memory device.
    Type: Grant
    Filed: February 17, 2004
    Date of Patent: February 1, 2005
    Assignee: Macronix International Co., Ltd.
    Inventors: Jiun-Ren Lai, Chun-Yi Yang, Shi-Xian Chen, Gwen Chang
  • Publication number: 20040256637
    Abstract: During fabrication of a mask read-only memory (ROM) device, a dielectric layer is grown on a substrate. Strip-stacked layers are formed on the dielectric layer, with each strip-stacked layer including a polysilicon and a silicon nitride layer. Source/drain regions are formed in the substrate between the strip-stacked layers, and spacers are then deposited between the strip-stacked layers. The strip-stacked layers are patterned into gates, which are disposed over every code position, with silicon nitride pillars being disposed on the gates. Additional spacers are formed on gate sidewalls. The silicon nitride pillars are removed, exposing the gates. A mask is then formed to cover active code positions, in accordance with the desired programming code. Insulating layers are then deposited through the mask onto the exposed gates. When the mask is removed, word lines are formed, interconnecting the gates without the insulating layers.
    Type: Application
    Filed: June 23, 2003
    Publication date: December 23, 2004
    Inventor: Chun-Yi Yang