Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more sensors, which are used to monitor the process in the process chamber. The sensors are connected to the computer system in a client/server relationship, in a way that allows the sensors to be hot swappable plug and play sensors. The computer system exchanges various messages with the sensors, synchronizes with the sensors, and integrates and utilizes data sent from the sensors.

Abstract: In a plasma processing system, a method for dynamically establishing a baseline is provided. The method includes processing a first substrate. The method also includes collecting a first signal data for the first substrate. The method further includes comparing the first signal data against the baseline. The method moreover includes including the first signal data in a recalculation of the baseline if the first signal data is within a confidence level range, which is in between a top level above the baseline and a bottom level below the baseline.

Abstract: A computer-implemented method for facilitating plasma processing tool component management across plurality of tools is provided. The method includes receiving first component data for first plurality of components, including identification and usage history, at first database associated with first tool. The method also includes receiving second component data for second plurality of components at second database associated with second tool, which is different from first tool. The method further includes synchronizing first and second component data with third database. The synchronizing includes synchronizing between third database and at least one of first and second database rules that govern usage of at least one component of first and second plurality of components. The third database is coupled to exchange data with plurality of tools.

Abstract: A targeted data collection system configured to collect processing data in a plasma processing system is provided. The system includes a data collection host and a plurality of plasma processing components having a plurality of sensors such that each of the plurality of plasma processing components having at least one sensor. Each of the sensors implements at least one intelligent targeted data agent that governs sensor data collection behavior. The system further includes a communication network coupling data collection host and plurality of sensors for bi-directional communication such that a given sensor of plurality of sensors receive information from data collection host pertaining to plasma processing system conditions occurring elsewhere from given sensor. Information received from data collection host causes the given processor to collect sensor in a first manner different from a second manner employed by sensor prior to receiving e information from the data collection host.

Abstract: A method for configuring a plasma cluster tool is disclosed. The method includes generating a key file from option specifications, the key file encapsulating configuration restrictions specifically imposed on the plasma cluster tool. The method also includes generating at least one system-wide configuration file and at least one component-level configuration file using the key file. The method additionally includes generating run-time executable objects from a database of option definition files, the at least one system-wide configuration file and the at least one component-level configuration file. Furthermore, the method includes employing the run-time executable objects to configure the plasma cluster tool.

Abstract: A method of optimizing a set of steps in a semi-conductor processing system comprising a software control program, wherein the semi-conductor processing system includes a first function, a second function, and a third function, and further includes a memory for storing a set of variables, and wherein the set of steps further includes a first step, a second step, and a third step. The invention includes generating the first step on an editor application, wherein the first function is added to the first step, and if required, a first set of user input instructions is added. The invention also includes generating the second step on the editor application, wherein the second function is added to the second step, and if required, a second set of user input instructions is added; and generating the third step on the editor application, wherein the third function is added to the third step, and if required, a third set of user input instructions is added.

Abstract: A method for configuring a specific plasma cluster tool having a plurality of modules. The method includes providing a set of module option definition files, the set of module option definition files containing generic configuration definitions for generic plasma cluster tools. The method further includes providing a set of tool-specific protection information, the set of tool-specific protection information including data that specifically identifies the particular plasma cluster tool for which the configuring is intended. The method further includes providing a set of tool-specific options specifications, the set of tool-specific options specifications specifying options that are specified for the specific plasma cluster tool. The method additionally includes generating a key file, the key file encapsulating configuration restrictions imposed on the specific plasma cluster tool, the key file being configured to be a required file in the configuring the specific plasma tool.

Abstract: A method for configuring a plasma cluster tool is disclosed. The method includes generating a key file from option specifications, the key file encapsulating configuration restrictions specifically imposed on the plasma cluster tool. The method also includes generating at least one system-wide configuration file and at least one component-level configuration file using the key file. The method additionally includes generating run-time executable objects from a database of option definition files, the at least one system-wide configuration file and the at least one component-level configuration file. Furthermore, the method includes employing the run-time executable objects to configure the plasma cluster tool.

Abstract: A method for configuring a specific plasma cluster tool having a plurality of modules. The method includes providing a set of module option definition files, the set of module option definition files containing generic configuration definitions for generic plasma cluster tools. The method further includes providing a set of tool-specific protection information, the set of tool-specific protection information including data that specifically identifies the particular plasma cluster tool for which the configuring is intended. The method further includes providing a set of tool-specific options specifications, the set of tool-specific options specifications specifying options that are specified for the specific plasma cluster tool. The method additionally includes generating a key file, the key file encapsulating configuration restrictions imposed on the specific plasma cluster tool, the key file being configured to be a required file in the configuring the specific plasma tool.

Abstract: An automated process control system configured for controlling a plasma processing system having a chamber, the chamber being configured for processing a substrate. The automatic process control system includes a first sensor disposed within the chamber, the first sensor being configured for making a first plurality of measurements pertaining to a first parameter associated with a structure disposed at least partially within the chamber. The performing the first plurality of measurements is performed during the processing of the substrate. The automatic process control system further includes first logic coupled to receive the first plurality of measurements from the first sensor. The first logic is configured for analyzing using SPC methodologies the first plurality of measurements during the processing.

Abstract: A method for determining an endpoint for etching a layer includes steps of estimating the etch endpoint and, during etch, directing radiant energy at two or more wavelengths onto the layer to be etched, detecting the last intensity maximum reflected at a first wavelength prior to the estimated etch endpoint, and detecting the intensity maximum reflected at a second wavelength first occurring after the last intensity maximum at the first wavelength.

Abstract: An automated process control system configured for controlling a plasma processing system having a chamber, the chamber being configured for processing a substrate. The automatic process control system includes a first sensor disposed within the chamber, the first sensor being configured for making a first plurality of measurements pertaining to a first parameter associated with a structure disposed at least partially within the chamber. The performing the first plurality of measurements is performed during the processing of the substrate. The automatic process control system further includes first logic coupled to receive the first plurality of measurements from the first sensor. The first logic is configured for analyzing using SPC methodologies the first plurality of measurements during the processing.

Abstract: An automated process control system configured for controlling a plasma processing system having a chamber, the chamber being configured for processing a substrate. The automatic process control system includes a first sensor disposed within the chamber, the first sensor being configured for making a first plurality of measurements pertaining to a first parameter associated with a structure disposed at least partially within the chamber. The performing the first plurality of measurements is performed during the processing of the substrate. The automatic process control system further includes first logic coupled to receive the first plurality of measurements from the first sensor. The first logic is configured for analyzing using SPC methodologies the first plurality of measurements during the processing.

Abstract: A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (CPU) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment.

Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.

Abstract: The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.