Abstract: A curved display and a method for binding a cover glass of the curved display are provided. The curved display includes a display module, a frame body and a cover glass. The frame body has a first flat surface and a second flat surface opposite to the first flat surface, in which the first flat surface is adhered to the display module. The cover glass has a binding flat surface and an application surface opposite to the binding flat surface, in which the binding flat surface is adhered to the second flat surface of the frame body, and the application surface is a surface with curvature. The second flat surface of the frame body is set with a first alignment mark, and the binding flat surface of the cover glass is set with a second alignment mark, and the first alignment mark corresponds to the second alignment mark.

Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

Abstract: One or more embodiments of the present disclosure describe an artificial intelligence assisted substrate defect repair apparatus and method. The AI assisted defect repair apparatus employs an object detection algorithm. Based on the plurality of images taken by detectors located at different respective positions, the detectors capture various views of an object including a defect. The composition information as well as the morphology information (e.g., shape, size, location, height, depth, width, length, or the like) of the defect and the object are obtained based on the plurality of images. The object detection algorithm analyzes the images and determines the type of defect and the recommends a material (e.g., etching gas) and the associated information (e.g., supply time of the etching gas, flow rate of the etching gas, etc.) for fixing the defect.

Abstract: The present disclosure provides a photomask and a method for fabricating a semiconductor structure with a photomask. The photomask includes a substrate, and a polymer layer over a surface of the substrate, wherein the polymer layer includes a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the surface of the photomask.

Abstract: A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.

Abstract: The present disclosure provides a photomask, including a front side having a patterned layer, a back side opposite to the front side, a sidewall connecting the front side and the back side, a reflective layer between the front side and the back side, and a polymer layer on the backside of the photomask.

Abstract: The present disclosure provides an apparatus for mounting a pellicle to a photomask, including a presser, a pellicle stage facing the presser, and a flexible material layer between the presser and the pellicle stage, wherein the flexible material layer includes a compartment filled with gas.

Abstract: A photomask cleaning tool includes various components to automatically remove a particle from a pellicle, such as a multi-jet nozzle to standardize and control the use of a gas to remove the particle, an ultrasonic probe to loosen the particle from the surface of the pellicle, a plurality of multi-jet nozzles to direct gas toward the particle from different directions, a control system to control the automated blower for various sizes and shapes of photomasks and for optimized particle removal techniques, and/or the like. In this way, the photomask cleaning tool is capable of removing a particle from a pellicle of a photomask in a manner that increases the effectiveness of removing the particle and reduces the likelihood of damage to the pellicle, which would otherwise result in expensive and time-consuming photomask rework.

Abstract: A method for generating extreme ultraviolet (EUV) radiation includes introducing a fuel droplet; applying a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris of the fuel droplet; and forming an energy field proximal to the location of the first laser beam strike to trap the movable debris. An EUV radiation source includes a fuel droplet generator, a first laser, a collector and an energy field. The fuel droplet generator is configured to provide a fuel droplet. The first laser is configured to generate a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris. The collector is configured to reflect the EUV radiation. The energy field is configured to trap the movable debris, wherein the energy field is proximal to the location of the first laser beam strike.

Abstract: A reticle pod is provided. The reticle pod includes a container and a fluid regulating module mounted to the container. The fluid regulating module includes a first cap, a second cap and a sealing film. The first cap and the second cap are connected to each other. A flowing path is formed between the first cap and the second cap for allowing a fluid passing through the fluid regulating module. The sealing film is positioned between the first cap and the second cap and configured for regulating a flow of the fluid passing through the flowing path.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating; a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device, including a first chamber for accommodating a mask, and a first ionizer in the first chamber, wherein the first ionizer is adjacent to the mask.

Abstract: A curved display and a method for binding a cover glass of the curved display are provided. The curved display includes a display module, a frame body and a cover glass. The frame body has a first flat surface and a second flat surface opposite to the first flat surface, in which the first flat surface is adhered to the display module. The cover glass has a binding flat surface and an application surface opposite to the binding flat surface, in which the binding flat surface is adhered to the second flat surface of the frame body, and the application surface is a surface with curvature. The second flat surface of the frame body is set with a first alignment mark, and the binding flat surface of the cover glass is set with a second alignment mark, and the first alignment mark corresponds to the second alignment mark.

Abstract: A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.

Abstract: The present disclosure provides an apparatus for mounting a pellicle to a photomask, including a presser, a pellicle stage facing the presser, and a flexible material layer between the presser and the pellicle stage, wherein the flexible material layer includes a compartment filled with gas.

Abstract: The present disclosure provides a photomask, including a front side having a patterned layer, a back side opposite to the front side, a sidewall connecting the front side and the back side, a reflective layer between the front side and the back side, and a polymer layer on the backside of the photomask.

Abstract: The present disclosure provides an apparatus for mounting a pellicle to a photomask, including a cover having a first side and a second side opposite to the first side, wherein the second side is configured to face the photomask, and an air pad disposed between the first side and the second side, wherein the air pad comprises a compartment filled with air.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device, including a first chamber for accommodating a mask, and a first ionizer in the first chamber, wherein the first ionizer is adjacent to the mask.

Abstract: The present disclosure provides a method of treating a mask for photolithography. The method includes disposing the mask on a stage in a tool. The mask includes a pellicle and a substrate. The method further includes providing oxygen gas in a space between the pellicle and the substrate, and splitting the oxygen gas in the space to form an oxygen atom or an ozone molecule. The method further includes exposing surfaces of the pellicle and the substrate to the oxygen atom or the ozone molecule for a predetermined duration. A mask treating system is also provided.

Abstract: A method for generating extreme ultraviolet (EUV) radiation includes introducing a fuel droplet; applying a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris of the fuel droplet; and forming an energy field proximal to the location of the first laser beam strike to trap the movable debris. An EUV radiation source includes a fuel droplet generator, a first laser, a collector and an energy field. The fuel droplet generator is configured to provide a fuel droplet. The first laser is configured to generate a first laser beam to strike the fuel droplet at a location to generate EUV radiation and form a movable debris. The collector is configured to reflect the EUV radiation. The energy field is configured to trap the movable debris, wherein the energy field is proximal to the location of the first laser beam strike.