Abstract: A grid structure in a pixel array may be at least partially angled or tapered toward a top surface of the grid structure such that the width of the grid structure approaches a near-zero width near the top surface of the grid structure. This permits the spacing between color filter regions in between the grid structure to approach a near-zero spacing near the top surfaces of the color filter regions. The tight spacing of color filter regions provided by the angled or tapered grid structure provides a greater surface area and volume for incident light collection in the color filter regions. Moreover, the width of the grid structure may increase at least partially toward a bottom surface of the grid structure such that the wider dimension of the grid structure near the bottom surface of the grid structure provides optical crosstalk protection for the pixel sensors in the pixel array.

Abstract: A circuit board structure includes a first sub-circuit board, a second sub-circuit board, and a third sub-circuit board. The first sub-circuit board has an upper surface and a lower surface opposite to each other, and includes at least one first conductive through hole. The second sub-circuit board is disposed on the upper surface of the first sub-circuit board and includes at least one second conductive through hole. The third sub-circuit board is disposed on the lower surface of the first sub-circuit board and includes at least one third conductive through hole. At least two of the first conductive through hole, the second conductive through hole, and the third conductive through hole are alternately arranged in an axial direction perpendicular to an extending direction of the first sub-circuit board. The first, second and third sub-circuit boards are electrically connected to one another.

Abstract: A clip for securing one or more cables associated with a computing device includes a baseplate, a first wall, and a second wall. The first wall and the second wall extend from the baseplate. The first wall has a first inward projection at a distal end thereof. The second wall has a second inward projection at a distal end thereof. The first wall is generally parallel to the second wall. The first wall and the second wall are spaced apart from each other by an interior space configured to receive the one or more cables. The first inward projection and the second inward projection aid in preventing the one or more cables from moving outside of the interior space.

Abstract: Disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. The semiconductor device comprises a source structure that includes a support source layer, a gate stack structure on the support source layer, a memory channel structure that penetrates through the gate stack structure and the support source layer, and a separation structure that penetrates through the gate stack structure and the support source layer. The support source layer includes a first source part through which the memory channel structure penetrates, and a second source part through which the separation structure penetrates. A top surface of the first source part is at a level lower than that of a top surface of the second source part.

Abstract: In an embodiment, a package includes an integrated circuit device attached to a substrate; an encapsulant disposed over the substrate and laterally around the integrated circuit device, wherein a top surface of the encapsulant is coplanar with the top surface of the integrated circuit device; and a heat dissipation structure disposed over the integrated circuit device and the encapsulant, wherein the heat dissipation structure includes a spreading layer disposed over the encapsulant and the integrated circuit device, wherein the spreading layer includes a plurality of islands, wherein at least a portion of the islands are arranged as lines extending in a first direction in a plan view; a plurality of pillars disposed over the islands of the spreading layer; and nanostructures disposed over the pillars.

Abstract: A display device includes a display panel and a gate driver. The gate driver includes an N-th stage (where N is a natural number) configured to output an N-th scan gate signal and output an N-th sensing gate signal. The N-th stage includes a compensator, a sixth transistor including a control electrode connected to a first node, and a ninth transistor including a control electrode connected to the first node. In a variable frequency mode, the compensator outputs a second signal to the first node in response to a first signal, and the sixth transistor does not output the N-th scan gate signal when the ninth transistor outputs the N-th sensing gate signal based on the sensing clock signal, the voltage of the first node, and the voltage of the second node.

Abstract: A method to obtain a cache miss ratio curve where a memory blocks of a cache have variable block sizes. By stacking sets of counters, each set being for a different block size, a stack distance for variable block sizes can be obtained and used to determine a miss ratio curve. Such curve can then be used to select a cache size that is appropriate for an application without requiring excessive memory. Methods can be used for batches of request, can apply limits to block sizes, and rounding for intermediary block sizes, they can be used with pruning, and their space complexity can be held constant.

Abstract: A trench silicon carbide metal-oxide semiconductor field effect transistor includes a silicon carbide semiconductor substrate and a trench metal-oxide semiconductor field effect transistor, the field effect transistor includes a trench vertically arranged and penetrating along a first horizontal direction, a gate insulating layer formed on an inner wall of the trench, a first poly gate formed on the gate insulating layer, a shield region formed outsides and below the trench, and a field plate arranged between a bottom wall of the trench and the shield region, and the field plate has semiconductor doping and is laterally in contact to a current spreading layer to deplete electrons of the current spreading layer when a reverse bias voltage is applied.

Abstract: A particle removal method for removing particles on the backside of a reticle is provided. The method includes disposing the reticle on a reticle holder. In addition, the method includes moving a baffle defining an enclosed area that encompasses a particle to be removed on a backside of the reticle. The method further includes spraying, by a solution spraying module of a particle removal device, a solution onto the particle. The method further includes sucking, by a sucking module of the particle removal device, the solution on the reticle with the particle. The method further includes emitting, by the particle removal device, a gas onto the backside of the reticle for drying the backside.

Abstract: A consumption prediction method includes the following steps: calculating a personal preference correlation coefficient; inputting historical environment data, a historical consumption record and the personal preference correlation coefficient into a first neural network model; a training model is generated by the first neural network model; and determining whether the accuracy rate of the training model is higher than the training threshold. When the accuracy rate of the training model is higher than the training threshold, the training model is regarded as a prediction model.

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.

Abstract: A display panel includes a display area and a peripheral area adjacent to the display area and includes a transistor, a light emitting device including a first electrode and a second electrode disposed on the first electrode and electrically connected to the transistor, a separator, a power line at least partially disposed in the peripheral area, and a separation conductive layer including a first portion disposed on the separator and a second portion disposed in the peripheral area. An outer side surface of the separator includes a connection area, and an interior angle between the connection area and a lower surface of the separator is smaller than an interior angle between an inner side surface of the separator and the lower surface of the separator.

Abstract: For a given application, increasing the size of a cache is beneficial up to a certain point and the number of hits does not increase significantly with a greater cache size. This disclosure provides a method to determine a miss ratio curve, for a cache having data blocks with a time-to-live. A hashed value of a data block's key address can be used to generate a 2D HLL counter for storing expiry times of the data blocks. The 2D HLL counter can be converted to a 1D array, from which a stack distance can be calculated. A frequency distribution of stack distances can then be converted into a miss ratio curve, from which an appropriate cache size can be selected.

Abstract: A display panel includes a transistor, a light emitting device, an insulating layer including a first opening, and a connection wiring at least partially covered by the insulating layer and electrically connecting the light emitting device and the transistor. The connection wiring includes a first connection part electrically connected to the light emitting device and including a line opening, a second connection part electrically connected to the transistor, and a connection part extending from the first connection part to the second connection part. An inner side surface of the connection wiring, which defines the line opening, includes an opening portion overlapping the first opening and a cover portion covered by the insulating layer.

Abstract: A gate driver includes: a signal generator configured to generate a gate signal, and output the gate signal to a first output terminal; and an inverted signal generator configured to generate an inverted gate signal based on the gate signal, and output the inverted gate signal to a second output terminal, wherein the inverted signal generator includes: a first transistor connected between a first node connected to the second output terminal and a first driving power supply terminal, and including a PMOS transistor; and a second transistor connected between the first node and a second driving power supply terminal, and including an NMOS transistor, and wherein a second node connected to the first output terminal is connected to a gate electrode of each of the first and second transistors.

Abstract: A first and second patterned circuit layer are formed on a first surface and a second surface of a base material. A first adhesive layer is formed on the first patterned circuit layer. A portion of the first surface is exposed by the first patterned circuit layer. The metal reflection layer covers the first insulation layer and a reflectance thereof is greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer, and the first adhesive layer is disposed between the first patterned circuit layer and the first insulation layer. A transparent adhesive layer and a protection layer are formed on the metal reflection layer. The transparent adhesive layer is disposed between the metal reflection layer and the protection layer. The protection layer comprises a transparent polymer. The light transmittance is greater than or equal to 80%.

Abstract: A display panel includes first and second pixels each including a light emitting device including a first electrode and a second electrode and a transistor electrically connected to the second electrode, a first insulating layer disposed on the transistor of each of the first and second pixels, a conductive pattern disposed on the first insulating layer and including a first pattern corresponding to the first pixel and a second pattern corresponding to the second pixel and spaced apart from the first pattern, and a separator disposed between the first pattern and the second pattern and contacting a portion of the first insulating layer, which is exposed and not covered by the first and second patterns, to separate the second electrode of the first pixel from the second electrode of the second pixel.

Abstract: A display panel includes a base layer including a first display region, a second display region adjacent to the first display region, and a non-display region adjacent to the first display region and the second display region, a demultiplexer circuit overlapping the second display region, a first pixel including a first pixel driver overlapping the first display region, and a first light emitting element overlapping the first display region and electrically connected with the first pixel driver, and a second pixel including a second pixel driver overlapping the first display region, and a second light emitting element and a third light emitting element that are electrically connected with the second pixel driver. At least one of the second light emitting element and the third light emitting element overlaps the second display region and is disposed on the demultiplexer circuit.

Abstract: A multilayer capacitor includes a body including dielectric layers and internal electrodes and external electrodes disposed on an external surface of the body and connected to the internal electrodes. The body includes a first surface and a second surface to which the internal electrodes are exposed, the first surface and the second surface opposing each other in a first direction, a third surface and a fourth surface opposing each other in a second direction which is a direction in which the dielectric layers are stacked, and a fifth surface and a sixth surface opposing each other in a third direction. At least one of the internal electrodes include a first bottleneck structure having a first directional length of a third-directional outer region smaller than an inner region thereof and a second bottleneck structure having a third directional length of a first directional outer region smaller than an inner region thereof.