Abstract: A robot system for servicing a semiconductor tool includes a cart frame. An arm support frame is fixed to the cart frame and is coupled to a robot arm. An arm frame is connected by hinges to the arm support frame at a first end and to a fixture connect interface at a second end. The fixture connect interface connects to a docking fixture of the semiconductor tool. An arm locking mechanism is attached to the arm support frame for locking the arm frame, when rotated, to an extended position or a folded position. The fixture connect interface connects the cart frame to the semiconductor tool, when the arm frame is locked in the extended position.

Abstract: A method includes generating, external to a radio frequency (RF) environment and based on a process recipe, a first signal and a second signal. The method further includes converting the first signal into an alternative signal and transmitting, over a non-conductive communication link, the alternative signal to a converter within the RF environment within a processing chamber of a substrate processing system. The method further includes converting the alternative signal into a third signal by the converter inside the RF environment within the processing chamber. The method further includes controlling a first plurality of elements disposed within the RF environment within the processing chamber via one or more first devices disposed within the RF environment within the processing chamber using the third signal and controlling a second plurality of elements of the substrate processing system via one or more second devices of the substrate processing system using the second signal.

Abstract: A gas distribution assembly for a processing chamber in a substrate processing system includes a gas plate including a plurality of holes configured to supply a gas mixture into an interior of the processing chamber and a carrier ring configured to support the gas plate. The carrier ring includes an annular body and a radially inwardly projecting portion. The radially inwardly projecting portion has a first inner diameter and the annular body has a second inner diameter greater than the first inner diameter, the radially inwardly projecting portion defines a ledge, and the gas plate is arranged on the ledge of the carrier ring. A dielectric window is arranged on the gas plate above the gas plate and the carrier ring such that the gas plate is supported between the carrier ring and the dielectric window.

Abstract: An electrostatic chuck is provided. In one example, the electrostatic chuck includes a base plate, a bond layer disposed over the base plate, a ceramic plate, and a heater. The ceramic plate includes a bottom surface disposed over the bond layer and a raised top surface for supporting a substrate. The raised top surface includes an outer diameter. The heater is disposed between the bottom surface of the ceramic plate and the bond layer. The heater element includes an inner heating element and an outer heating element. The inner heating element is arranged in a central circular area adjacent to the bottom surface of the ceramic plate and the outer heating element is arranged in an annular area that surrounds the central circular area and is adjacent to the bottom surface of the ceramic plate. An outer diameter of the outer heating element is inset from an annual heater setback region of the ceramic plate.

Abstract: A thin shadow ring for a substrate processing system includes an annular body having an inner diameter and an outer diameter. The inner diameter and the outer diameter define a cross-sectional width of the annular body between the inner diameter and the outer diameter. At least two tabs extend radially outward from the annular body. The cross-sectional width of the annular body between the inner diameter and the outer diameter is less than 1.0 inch.

Abstract: A selected reject band non-RF-coupling tile includes a ground plate disposed on a first side of a printed circuit board. The selected reject band non-RF-coupling tile also includes a planar inductor disposed on a second side of the printed circuit board. The selected reject band non-RF-coupling tile also includes a conductive via structure extending through the printed circuit board. The conductive via structure electrically connects to both the ground plate and the planar inductor at a location near an interior end of the planar inductor. The selected reject band non-RF-coupling tile is used to shield enclosure walls and/or other electrical circuitry from RF fields. The selected reject band non-RF-coupling tile is also used to encapsulate an RF carrying component to block RF fields that emanate from the RF carrying component.

Abstract: A flow optimizer is disclosed for use in plasma chamber. The flow optimizer includes a ring that is disposed between a wafer support and a dielectric window defined in the plasma chamber. The ring of the flow optimizer is configured to be positioned between the wafer support and the dielectric window so that an outer edge of the ring is adjacent to side walls of the plasma chamber and an opening of the ring is substantially aligned with a diameter of the wafer support.

Abstract: A substrate carrier is described that uses a proportional thermal fluid delivery system. In one example the apparatus includes a heat exchanger to provide a thermal fluid to a fluid channel of a substrate carrier and to receive the thermal fluid from the fluid channel, the thermal fluid in the fluid channel to control the temperature of the carrier during substrate processing. A proportional valve controls the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve in response to the measured temperature to adjust the rate of flow.

Abstract: A gas distribution device for a substrate processing system includes an upper plate including a first hole and a plurality of second holes and a lower plate. The lower plate includes a recessed region formed in one of an upper surface of the lower plate and a lower surface of the upper plate. The recessed region defines a plenum volume between the upper plate and the lower plate. The lower plate further includes a raised fence located within the recessed region. The fence separates the plenum volume into a first plenum and a second plenum, the first plenum is in fluid communication with the first hole, and the second plenum is in fluid communication with the plurality of second holes.

Abstract: A radio frequency filter is provided and includes a dielectric layer and a first inductor. The first inductor includes an input, a first coil disposed on a first side of the dielectric layer and connected to the input, and a second coil disposed on a second side of the dielectric layer opposite the first side. The first and second coils are planar, such that windings of the first coil are in a first layer and windings of the second coil are in a second layer. The first coil overlaps and is connected in series with the second coil. The first coil, the dielectric layer and the second coil collectively provide a capacitance of the radio frequency filter. The first inductor further includes a first via extending through the dielectric layer and connected to the first coil and the second coil and a first output connected to the second coil.

Abstract: Systems and methods for using a transformer to achieve uniformity in processing a substrate are described. One of the systems includes a primary winding having a first end and a second end. The first end is coupled to an output of an impedance matching circuit and the second end is coupled to a capacitor. The system further includes a secondary winding associated with the primary winding and coupled to a first end and a second end of a transformer coupled plasma (TCP) coil of a plasma chamber. The primary winding receives a modified radio frequency (RF) signal from the impedance matching circuit to generate a magnetic flux to induce a voltage in the secondary winding. An RF signal generated by the voltage is transferred from the secondary winding to the TCP coil.

Abstract: A substrate support including a body, a heating element, a first radio frequency filter, and a second radio frequency filter. The body is configured to support a substrate. The heating element is at least partially implemented in a first portion of the body. The first radio frequency filter is connected to an input of the heating element and at least partially implemented in a second portion of the body and connected to the heating element by a first via. The second radio frequency filter is connected to an output of the heating element and at least partially implemented in the second portion or a third portion of the body.

Abstract: A gas distribution plate for a substrate processing system includes an outer ring including a stepped interface on a radially inner surface thereof and N inner rings, where N is an integer greater than zero. At least one of the N inner rings is circumferentially segmented and includes an inner stepped interface and an outer stepped interface. An outer stepped interface of a radially outer one of the N inner rings is configured to rest on and mate with the inner stepped interface of the outer ring. A center portion includes an outer stepped interface on a radially outer surface thereof that is configured to rest on and mate with an inner stepped interface of a radially inner one of the N inner rings.

Abstract: Components and processes are disclosed herein for managing non-volatile and/or low-volatility byproduct materials that are generated within a plasma processing region of a plasma processing chamber during performance of various plasma-based processes on a substrate. The components include a top window structure, a liner structure, an edge ring structure, a focus ring structure, a ground ring structure, a substrate access port shield, an insert liner for a port opening in a chamber wall, and an exhaust baffle assembly for positioning within an exhaust channel connected to the chamber. One or more process-exposed surface(s) of the various components are subjected to a surface roughening/texturizing process to impart a surface roughness and/or engineered topography to the process-exposed surface that promotes adhesion and retention of plasma process byproduct materials.

Abstract: A method includes generating, external to a radio frequency (RF) environment and based on a process recipe, a first signal and a second signal. The method further includes converting the first signal into an alternative signal and transmitting, over a non-conductive communication link, the alternative signal to a converter within the RF environment within a processing chamber of a substrate processing system. The method further includes converting the alternative signal into a third signal by the converter inside the RF environment within the processing chamber. The method further includes controlling a first plurality of elements disposed within the RF environment within the processing chamber via one or more first devices disposed within the RF environment within the processing chamber using the third signal and controlling a second plurality of elements of the substrate processing system via one or more second devices of the substrate processing system using the second signal.

Abstract: A coil portion is formed. A first articulation portion extends from the coil portion. A first mounting structure extends from the first articulation portion. The first mounting structure includes a first mounting region configured to mount in contact with a terminal of a first electrical component. The first articulation portion and the first mounting structure are configured to position the first mounting region at a location outside of a strong electromagnetic field emanating from the coil portion. A second articulation portion extends from the coil portion. A second mounting structure extends from the second articulation portion. The second mounting structure includes a second mounting region configured to mount in contact with a terminal of a second electrical component. The second articulation portion and the second mounting structure are configured to position the second mounting region at a location outside of the strong electromagnetic field emanating from the coil portion.

Abstract: A substrate processing system includes a processing chamber including a dielectric window and a substrate support arranged therein to support a substrate. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A Faraday shield is arranged between the coil and the dielectric window. An RF generator is configured to supply RF power to the coil. The coil is coupled by stray capacitance and/or directly coupled to the Faraday shield. A capacitor is connected to one of the coil and the Faraday shield to adjust a position of a voltage standing wave along the coil.

Abstract: A method includes generating, based on a process recipe, a first electrical control signal by a processing device external to a particular radio frequency (RF) environment. The method further includes converting the first electrical control signal into an alternative control signal, transmitting the alternative control signal to a converter within the particular RF environment over a non-conductive communication link, and converting the alternative control signal into a second electrical control signal by the converter. The method further includes controlling a first plurality of elements via one or more switching devices using the second electrical control signal. The method further includes generating, based on the process recipe, a third signal by the processing device and controlling a second plurality of elements disposed outside of the RF environment using the third signal.

Abstract: A heating system includes a first plurality of heating elements disposed within an electrostatic chuck and an electrically conductive housing. The heating system further includes one or more switching devices to control temperatures output by the first plurality of heating elements. The heating system further includes a converter that is electrically coupled to the one or more switching devices and disposed within the electrically conductive housing. The electrically conductive housing and the first plurality of heating elements are to operate in a radio frequency (RF) environment. A second plurality of elements are to operate outside of the RF environment. The converter is to communicate with a controller outside of the RF environment via a non-conductive communication link. The controller is to receive a process recipe and is to control the first plurality of heating elements and the second plurality of elements substantially simultaneously based on the process recipe.

Abstract: An apparatus for processing substrates is provided. A plasma processing chamber is provided. At least one substrate support for supporting at least one substrate is in the plasma processing chamber. At least one gas inlet is provided for flowing gas into the plasma processing chamber. A dielectric window forms a cover for the plasma processing chamber. The dielectric window comprises an outer dielectric window ring with a central aperture and an inner concaved dielectric window extending across the central aperture, wherein the inner concaved dielectric window forms a volume in fluid communication with an interior of the plasma processing chamber, and wherein the at least one gas inlet flows gas into the volume of the inner concaved dielectric window. An outer coil assembly is adjacent to the outer dielectric window ring. An inner coil assembly surrounds the inner concaved dielectric window.