Patents by Inventor Dan Millward
Dan Millward has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11139159Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.Type: GrantFiled: October 19, 2018Date of Patent: October 5, 2021Assignee: Micron Technology, Inc.Inventors: Joseph Neil Greeley, Dan Millward, Wayne Huang
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Publication number: 20190047025Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.Type: ApplicationFiled: October 19, 2018Publication date: February 14, 2019Applicant: Micron Technology, Inc.Inventors: Joseph Neil Greeley, Dan Millward, Wayne Huang
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Patent number: 10137481Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.Type: GrantFiled: January 26, 2015Date of Patent: November 27, 2018Assignee: Micron Technology, Inc.Inventors: Joseph Neil Greeley, Dan Millward, Wayne Huang
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Patent number: 9418848Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.Type: GrantFiled: October 1, 2015Date of Patent: August 16, 2016Assignees: Micron Technology, Inc., Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
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Publication number: 20160027638Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.Type: ApplicationFiled: October 1, 2015Publication date: January 28, 2016Inventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
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Patent number: 9235134Abstract: Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.Type: GrantFiled: August 16, 2010Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan Millward
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Patent number: 9234273Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.Type: GrantFiled: November 24, 2010Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventors: Dan Millward, Stefan Uhlenbrock, Timothy A. Quick
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Patent number: 9184058Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.Type: GrantFiled: December 23, 2013Date of Patent: November 10, 2015Assignee: Micron Technology, Inc.Inventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
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Patent number: 9177794Abstract: A method of patterning a substrate includes forming spaced first features over a substrate. Individual of the spaced first features include sidewall portions of different composition than material that is laterally between the sidewall portions. A mixture of immiscible materials is provided between the spaced first features. At least two of the immiscible materials are laterally separated along at least one elevation between adjacent spaced first features. The laterally separating forms a laterally intermediate region including one of the immiscible materials between two laterally outer regions including another of the immiscible materials along the one elevation. The laterally outer regions are removed and material of the spaced first features is removed between the sidewall portions to form spaced second features over the substrate. Other embodiments are disclosed.Type: GrantFiled: January 13, 2012Date of Patent: November 3, 2015Assignee: Micron Technology, Inc.Inventor: Dan Millward
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Patent number: 9096730Abstract: Some embodiments include methods of forming patterns. A block copolymer film may be formed over a substrate, with the block copolymer having an intrinsic glass transition temperature (Tg,0) and a degradation temperature (Td). A temperature window may be defined to correspond to temperatures (T) within the range of Tg,0?T?Td. While the block copolymer is in the upper half of the temperature window, solvent may be dispersed into the block copolymer to a process volume fraction that induces self-assembly of the block copolymer into a pattern. A defect specification may be defined, and the process volume fraction of solvent may be at level that achieves self-assembly within the defect specification. In some embodiments, the solvent may be removed from within the block copolymer while maintaining the defect specification.Type: GrantFiled: March 20, 2014Date of Patent: August 4, 2015Assignee: Micron Technology, Inc.Inventors: Dan Millward, Scott E. Sills
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Publication number: 20150179467Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.Type: ApplicationFiled: December 23, 2013Publication date: June 25, 2015Applicants: Micron Technology, Inc., Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLCInventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
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Publication number: 20150128992Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.Type: ApplicationFiled: January 26, 2015Publication date: May 14, 2015Inventors: Joseph Neil Greeley, Dan Millward, Wayne Huang
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Patent number: 8974678Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.Type: GrantFiled: June 7, 2013Date of Patent: March 10, 2015Assignee: Micron Technology, Inc.Inventor: Dan Millward
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Patent number: 8940102Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.Type: GrantFiled: June 27, 2012Date of Patent: January 27, 2015Assignee: Micron Technology, Inc.Inventors: Neil Joseph Greeley, Dan Millward, Wayne Huang
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Publication number: 20150015860Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: ApplicationFiled: September 29, 2014Publication date: January 15, 2015Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael D. Hyatt, Jianming Zhou
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Publication number: 20140349486Abstract: Some embodiments include methods of forming patterns utilizing copolymer. A main body of copolymer may be formed across a substrate, and self-assembly of the copolymer may be induced to form a pattern of structures across the substrate. A uniform thickness throughout the main body of the copolymer may be maintained during the inducement of the self-assembly. In some embodiments, the uniform thickness may be maintained through utilization of a wall surrounding the main body of copolymer to impede dispersal of the copolymer from the main body. In some embodiments, the uniform thickness may be maintained through utilization of a volume of copolymer in fluid communication with the main body of copolymer.Type: ApplicationFiled: August 8, 2014Publication date: November 27, 2014Inventors: Scott E. Sills, Dan Millward
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Patent number: 8883372Abstract: A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.Type: GrantFiled: June 5, 2012Date of Patent: November 11, 2014Assignee: Nanya Technology Corp.Inventors: Scott Light, Dan Millward, Anton Devilliers, Yuan He, Michael Hyatt, Lijing Gou, Kaveri Jain, Zishu Zhang, Jianming Zhou
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Patent number: 8853311Abstract: In one embodiment, a block copolymer-containing composition includes PS-b-PXVP and a lithium salt, where “X” is 2 or 4. All lithium salt is present in the composition at no greater than 1 ppm by weight. In one embodiment, a homogenous block copolymer-including comprising has PS-b-PXVP present in the composition at no less than 99.99998% by weight, where “X” is 2 or 4. Methods of forming such compositions are disclosed.Type: GrantFiled: September 11, 2012Date of Patent: October 7, 2014Assignee: Micron Technology, Inc.Inventors: Dan Millward, Scott Sills
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Patent number: 8845908Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imagable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imagable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imagable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: GrantFiled: August 24, 2010Date of Patent: September 30, 2014Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou
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Patent number: 8834956Abstract: Some embodiments include methods of forming patterns utilizing copolymer. A main body of copolymer may be formed across a substrate, and self-assembly of the copolymer may be induced to form a pattern of structures across the substrate. A uniform thickness throughout the main body of the copolymer may be maintained during the inducement of the self-assembly. In some embodiments, the uniform thickness may be maintained through utilization of a wall surrounding the main body of copolymer to impede dispersal of the copolymer from the main body. In some embodiments, the uniform thickness may be maintained through utilization of a volume of copolymer in fluid communication with the main body of copolymer.Type: GrantFiled: June 22, 2009Date of Patent: September 16, 2014Assignee: Micron Technology, Inc.Inventors: Scott Sills, Dan Millward