Abstract: The invention relates to the use of low levels of aliphatic primary and secondary amines to control air void formation in any polymerization reaction having carbonyl groups, and especially carboxylic acid ester group-containing monomers at a level of at least 10% of total monomer, where the monomer has a peak polymerization exotherm temperature of greater than the boiling point of the monomer. The primary or secondary amines are used in the polymerization mixture at levels of 100 to 5000 ppm, based on the carboxylic acid ester group-containing monomer. It is believed the primary and secondary amines hydrogen bond with the —C?O)O— containing monomer to increase the monomer boiling point, and decrease or even eliminate the formation of air voids due to monomer boiling. The invention is especially useful in polymerization of methymethacrylate polymers and copolymers, either neat, or as a polymer composite system.

Abstract: A method of making CF3CH2SH, comprising a step of reacting CF3CH2X, wherein X is halide or tosylate, with MSH, where M is an alkali metal such as Na or K, to yield CF3CH2SH.

Abstract: A marketing strategy automation system is disclosed. The system including a processor; a non-transitory computer readable storage medium coupled to the processor having stored thereon a plurality of instructions that, when executed by the processor, causes the processor to carry out a method, the instructions including: a strategy module; a conversion module; an execution module; and an optimization module.

Abstract: A roller assembly for a hood actuation system includes a mounting block and a fastener having a shaft extending through the mounting block. The fastener is configured to couple the mounting block to an actuator of the hood actuation system. The roller assembly also includes at least one driving roller. The shaft of the fastener extends through an opening in the at least one driving roller to couple the at least one driving roller to the mounting block.

Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (Vt) of a memory cell under a first parameter at a read temperature and measure a second Vt of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A Vt correction term for the memory cell is determined based upon the first Vt measurement and the second Vt measurement. A read Vt of the memory cell is adjusted by using the Vt correction term.

Abstract: A device includes a memory device and a controller. The memory device includes read/write circuitry and a plurality of memory dies. The controller is coupled to the memory device. The controller is configured to, responsive to determining that at least one storage element of a first die of the plurality of memory dies has a characteristic indicative of an aging condition, increase the temperature of the first die by performing memory operations on the first die until detecting a condition related to the temperature.

Abstract: The invention relates to the use of low levels of aliphatic short-chain saturated esters to control air void formation in any exothermic polymerization reaction in which the exotherm exceeds the boiling point of the monomer. One such polymerization is the bulk polymerization of one or more monomers having carboxylic acid ester monomers, at a level of at least 10% of total monomer. The aliphatic short-chain saturated esters are used in the polymerization mixture at levels of 0.5 to 10 weight percent, based on the carboxyl-containing monomer. The invention is especially useful in polymerization of methylmethacrylate polymers and copolymers, either neat, or as a polymer composite system.

Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (Vt) of a memory cell under a first parameter at a read temperature and measure a second Vt of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A Vt correction term for the memory cell is determined based upon the first Vt measurement and the second Vt measurement. A read Vt of the memory cell is adjusted by using the Vt correction term.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for dynamic read table generation. One apparatus includes a set of non-volatile storage cells. A controller for a set of non-volatile storage cells is configured to, in response to unsuccessfully reading a storage cell of the set of non-volatile storage cells using a parameter, read the storage cell using one or more shifted values. A controller for a set of non-volatile storage cells is configured to, in response to successfully reading a storage cell using one or more shifted values, add the one or more shifted values to a storage device.

Abstract: The invention relates to the use of low levels of aliphatic primary and secondary amines to control air void formation in any polymerization reaction having carbonyl groups, and especially carboxylic acid ester group-containing monomers at a level of at least 10% of total monomer, where the monomer has a peak polymerization exotherm temperature of greater than the boiling point of the monomer. The primary or secondary amines are used in the polymerization mixture at levels of 100 to 5000 ppm, based on the carboxylic acid ester group-containing monomer. It is believed the primary and secondary amines hydrogen bond with the —C?O)O— containing monomer to increase the monomer boiling point, and decrease or even eliminate the formation of air voids due to monomer boiling. The invention is especially useful in polymerization of methymethacrylate polymers and copolymers, either neat, or as a polymer composite system.

Abstract: The invention relates to the use of low levels of glycols and short chain diols to control air void formation in any polymerization reaction having carbonyl-containing monomers, and preferably carboxylic acid ester monomers, at a level of at least 10% of total monomer, where the monomer has a peak polymerization exotherm temperature of greater than the boiling point of the monomer. The glycols and short chain diols are used in the polymization mixture at levels of 0.5 to 10 weight percent, based on the carboxylic acid ester-containing monomer. It is believed the glycols and short chain diols hydrogen bond with the —(C?O)O— containing monomer to increase the monomer boiling point, and decrease or even eliminate the formation of air voids due to monomer boiling. The invention is especially useful in polymerization of methyl methacrylate polymers and copolymers, either neat, or as a polymer composite system.

Abstract: A device includes a memory and a controller coupled to the memory. The controller is configured to determine a temperature-based value of a search parameter in response to detecting that an error rate of a codeword read from the memory exceeds a threshold error rate. The controller is further configured to iteratively modify one or more memory access parameters associated with reducing temperature-dependent threshold voltage variation and to re-read the codeword using the modified one or more memory access parameters.

Abstract: A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to determining that the memory device has the characteristic indicative of the temperature crossing, determine that the memory device satisfies an availability criterion. The controller is further configured to, in response to determining that the memory device satisfies the availability criterion, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.

Abstract: A memory stack structure includes a cavity including a back gate electrode, a back gate dielectric, a semiconductor channel, and at least one charge storage element. In one embodiment, a line trench can be filled with a memory film layer, and a plurality of semiconductor channels can straddle the line trench. The back gate electrode can extend along the lengthwise direction of the line trench. In another embodiment, an isolated memory opening overlying a patterned conductive layer can be filled with a memory film, and the back gate electrode can be formed within a semiconductor channel and on the patterned conductive layer. A dielectric cap portion electrically isolates the back gate electrode from a drain region. The back gate electrode can be employed to bias the semiconductor channel, and to enable sensing of multinary bits corresponding to different amounts of electrical charges stored in a memory cell.

Abstract: A device includes a memory device and a controller. The controller is coupled to the memory device. The controller is configured to, in response to receiving a request to perform a memory access at the memory device, determine that the memory device has a characteristic indicative of a temperature crossing. The controller is also configured to, in response to the determination, increase a temperature of the memory device by performing memory operations on the memory device until detecting a condition related to the temperature.

Abstract: A method of making CF3CH2SH, comprising a step of reacting CF3CH2X, wherein X is halide or tosylate, with MSH, where M is an alkali metal such as Na or K, to yield CF3CH2SH.

Abstract: Techniques are described for determining whether a non-volatile memory device is defective due to a word line that programs too fast, leading to an uncorrectable amount of data errors when programing data to the word line. In one set of examples, a set of memory cells are programmed by a series of voltage pulses applied along a word line without locking out the set of memory cells. A verify operation is then performed to see if the number of memory cells programmed above the verify level is too large and, if so, an error status is returned. In other examples, a lower limit on the number of voltage pulses needed to complete programming is introduced, and if the programming completes in less than this number of voltage pulses, an error status returned. A lower limit on the number of voltage pulses can be on a state by state basis or for all data states to complete.

Abstract: Techniques are described for determining whether a non-volatile memory device is defective due to a word line that programs too fast, leading to an uncorrectable amount of data errors when programing data to the word line. In one set of examples, a set of memory cells are programmed by a series of voltage pulses applied along a word line without locking out the set of memory cells. A verify operation is then performed to see if the number of memory cells programmed above the verify level is too large and, if so, an error status is returned. In other examples, a lower limit on the number of voltage pulses needed to complete programming is introduced, and if the programming completes in less than this number of voltage pulses, an error status returned. A lower limit on the number of voltage pulses can be on a state by state basis or for all data states to complete.

Abstract: Liquid resin compositions that can be used in the manufacture of composite materials are described. A method of making a fiber-reinforced polymeric composite material comprises wetting a fibrous material with a liquid prepolymer composition comprising at least one (meth)acrylic monomer, at least one base, and at least one peroxy ester; and polymerizing the liquid prepolymer composition to form a fiber-reinforced polymeric composite material.

Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (Vt) of a memory cell under a first parameter at a read temperature and measure a second Vt of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A Vt correction term for the memory cell is determined based upon the first Vt measurement and the second Vt measurement. A read Vt of the memory cell is adjusted by using the Vt correction term.