Abstract: Due to the threat of virus attacks and ransom ware, an apparatus and methods for protecting backup storage devices from malicious software virus attacks is explored. An independent backup storage system is connected to a primary storage server over an undiscoverable communications line. The backup storage system is a read-only backup storage system most of the time buffering the backup storage system from a virus or attack on the primary storage server. The backup storage system changes from a read-only backup storage system to a read/write backup storage system only during a backup window of time where data is backed up to the backup storage system. A snapshot of the backup data is maintained in the backup storage system and can be made available at numerous points of time in the past if the data primary storage server becomes corrupted.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.

Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.

Abstract: A computerized mat cutter machine system includes a mat table having a cutter surface, at least one clamp moveable between a clamped position to secure a matboard to the mat table and a non-clamped position, a cutter head for performing at least one of cutting and finishing a design in the matboard, and a clamp controller bus for communicatively coupling a board controller to a clamp controller of the at least one clamp. The clamp controller bus includes a first bus configured as a dual ended serial differential bus that allows signals to flow from the board controller to the clamp controller, and a second bus configured as an analog bus that allows signals to flow from the clamp controller to the board controller.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: A magazine-based data storage library in connection with a disk drive-based archive storage system is described that essentially generates parity data for tape formatted data streams (stored to tape cartridges) that do not align by way of data blocks or file marks. Data streams intended for tape storage sent to tape cartridges are also sent to a disk drive storage system via an encoder where parity of the data streams can be generated. More specifically, the encoder digitally formats tape blocks and tape marks (as well as other tape formatted structure) in a digital stream of data that can be added to other encoded digital streams of data to generate parity. To reconstruct a specific tape cartridge from a tape set, the encoded data from each of the tapes in the tape set are subtracted from the parity data and the remaining encoded data is decoded and sent to a designated tape cartridge.

Abstract: Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship d ? V 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, d ? V 0 dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: A pickleball paddle. The paddle includes a ball striking portion, or head, and a handle. A first planar face resides on a first side of the head, and a second planar face resides on a second side of the head opposite the first side. The paddle also includes a transition portion comprising a frame. In one aspect, the frame comprises two members that extend into the handle, and that also extend up to the head and form a hoop around the head. Preferably, the frame forms an open throat at the transition section, between the two frame members. The first planar face has a control response and a power response, while the second planar face also has a control response and a power response. In one arrangement, the control response of the first face is greater than the control response of the second face.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.

Abstract: Example methods and systems for computing a reaction time from an indexed event occurring in an indexed recording to a reaction signal are described. An example method includes receiving a sample of ambient content of a computing device, determining a position identification of the sample of ambient content into an indexed recording to which the sample of ambient content matches, based on the position identification, synchronizing display of content on a user interface of the computing device to the indexed recording, and computing the reaction time. The reaction signal is generated by the computing device and is indicative of a user's response to the indexed event.

Abstract: A centralized server, such as in a cloud environment, is provided generally connected to a plurality of clients that independently maintain data that is also maintained in the centralized server. The centralized server possessing an authoritative Bloom filter series comprising at least a plurality of Bloom filters each with successive Bloom filter entries that periodically provide and update a copy of the authoritative Bloom filter series at each of the clients. Each client checks to see if a data file is present locally by searching for a corresponding Bloom filter entry in the copy of the Bloom filter series before seeking the data file in the centralized server.

Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.