Abstract: One facilitates determination of a path that comprises a plurality of specific locations (201). In an optional though preferred embodiment these specific locations comprise locations where a given functional ink will preferably be printed using a continuous printing spray. Also in an optional though preferred embodiment this path will also avoid at least one predetermined area (701) where such a functional ink should not be printed. In a preferred approach this process (100) generally provides for identifying (101) these specific locations and further identifying (102), when applicable, the one or more predetermined areas to be avoided.

Abstract: Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.

Abstract: Merchandising and marketing data collection systems (100, 400, 500, 700, 1200, 1300, 1400, 1500) collect data on shopper's (816) interaction with merchandise samples (106, 414, 1212, 1400, 1502), page store personnel, output promotional vouchers and use the merchandise samples to access information about the capabilities of the merchandise being sold.

Abstract: A protective photochromic barrier film for a light-sensitive printed electronic substrate. Light-sensitive semiconductor devices on a dielectric substrate are electrically connected by conductors. A barrier layer containing photochromic dyes covers some or all of the light-sensitive semiconductor devices. Upon exposure to visible, infrared, or ultraviolet light, the photochromic dyes change chemical structure and decrease the amount of visible or non-visible light that can impinge upon the light-sensitive electronic devices. Upon removal of the visible or non-visible light, the photochromic dyes either revert to their original structure or maintain their altered state.

Abstract: A printed multilayer electronic circuit has printed electronic components on a first level circuit. Electrical conductors are printed on the first level circuit, electrically connected to the electronic components. A layer of dielectric material is printed over the printed electrical conductors. The dielectric layer contains apertures or openings that extend vertically through the dielectric layer down to the electrical conductors. A second set of electrical conductors are then printed on the dielectric layer, situated around the apertures. Electrically conductive material is printed in the apertures so that an electrical connection is made from the second set of electrical conductors to the electrical conductors on the lower level.

Abstract: A printed electronic device and methods for determining the electrical value of the device. A dielectric material is contact printed on a substrate using a preset force. The substrate has a pressure sensitive material that is optically responsive in direct proportion to the amount of force imparted by the contact printing. The force of the contact printing causes the pressure sensitive material to form a pattern that is quantifiable to the amount of force. The pattern is then optically inspected and compared to sets of standards in order to quantify the amount of force that was used in printing. The thickness of the printed dielectric material is then calculated based on the quantified force by comparing to another set of standards. The electrical value of the printed material is calculated based on the calculated thickness of the printed dielectric material, the surface area of the printed dielectric material, and the dielectric constant of the dielectric material.

Abstract: An apparatus (200) such as a semiconductor device comprises a gate electrode (201) and at least a first electrode (202). The first electrode preferably has an established perimeter that at least partially overlaps with respect to the gate electrode to thereby form a corresponding transistor channel. In a preferred approach the first electrode has a surface area that is reduced notwithstanding the aforementioned established perimeter. This, in turn, aids in reducing any corresponding parasitic capacitance. This reduction in surface area may be accomplished, for example, by providing openings (203) through certain portions of the first electrode.

Abstract: An electroluminescent display contains an array of dynamically addressable pixels. The pixels are arranged on one side of a carrier substrate. Conductive vias in the substrate are electrically connected to each of the pixels. Each pixel consists of a bottom electrode that is coupled to a via, an electroluminescent material, and a dielectric material. A common top electrode is disposed on the dielectric material. A driver circuit conductor or connector is situated on the other side of the substrate and is electrically coupled to each of the conductive vias and to the common top electrode, so that each pixel can be individually addressed to illuminate the electroluminescent material on individual pixels.

Abstract: An electroluminescent display device contains an electroluminescent phosphor sandwiched between a pair of electrodes and a graphic arts element. The device is fabricated by bonding a generic electroluminescent base laminate containing an electrode and an electroluminescent layer, to a custom graphic arts film containing a graphic element and a corresponding electrode. The generic electroluminescent base laminate is made at a first location or time, and the custom graphic arts film is made at a second location or time.

Abstract: Two or more semiconductor devices (21 and 22) are formed on a substrate (20) and are each comprised of a plurality of printed components (23 and 24). At least one such printed component (25) is shared by both such semiconductor devices.

Abstract: An electroluminescent display device is fabricated by creating a generic electroluminescent base laminate or precursor containing an base electrode and an electroluminescent layer. A custom graphic arts film or precursor containing a graphic element and a corresponding electrode is also fabricated. The two precursors are then bonded together using an adhesive to create the customized EL display, so that only the sections of the electroluminescent display device that are associated with the corresponding electrode on the graphic arts film emit light.

Abstract: Merchandising and marketing data collection systems (100, 400, 500, 700, 1200, 1300, 1400, 1500) collect data on shopper's (816) interaction with merchandise samples (106, 414, 1212, 1400, 1502), page store personnel, output promotional vouchers and use the merchandise samples to access information about the capabilities of the merchandise being sold.

Abstract: An organic semiconductor inverting circuit includes at least three organic transistors, an output terminal (110, 210, 310, 410), a reference supply voltage input (115, 215, 315, 415), a first positive supply voltage input (120, 220, 320, 420), and a negative supply voltage input (125, 225, 325, 425). One of the three organic transistors is an input transistor having a gate to which is coupled an input terminal (105, 205, 305, 405). The output terminal (110, 210, 310, 410) is coupled to a first electrode of at least one of the at least three organic transistors.

Abstract: An exemplary system and method for defining fine printed OFET features is disclosed as comprising inter alia: printed deposition of a conductive material on a substrate; and laser-assisted ablative removal of at least a portion of the conductive material to define source and drain electrode structures. Disclosed features and specifications may be variously controlled, adapted or otherwise optionally modified to improve OFET feature definition. Exemplary embodiments of the present invention representatively provide for resolved OFET channel features that may be readily integrated with or extended to other organic electronic technologies for the improvement of device package form factors, weights and other manufacturing and/or device performance metrics.

Abstract: A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: A semiconductor device comprising a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11) formed thereon with a source electrode (14) and a drain electrode (15) overlying the gate electrode (11) and organic semiconductor material (16) disposed at least partially thereover. The source electrode (14) and the drain electrode (15) each have a non-linear boundary segment that effectively extends the channel width between these two electrodes to thereby increase the current handling capability of the resultant device. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract: The present invention is directed to semiconductor films and a process for their preparation. In accordance with the process of the present invention, semiconductor organic material is blended with a multi-component solvent blend and the blend is deposited on a receiving material to provide a continuous highly ordered film having greater periodicity than films produced with a single solvent/semiconducting material blend under similar processing conditions.