Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Electro-optic structures may be integrally provided with such semiconductor structures, which semiconductor structures may also include light-emitting devices and control circuitry.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: The surface-mount device package comprises a pad located on a face of the surface-mount device, a solder bump bonded to the pad, and a terminal spaced radially apart from the pad. A terminal surrounds the pad in at least one common plane that bisects the pad and the terminal. An electrically resistive volume intervenes between the pad and the terminal. The pad is electrically coupled to the terminal through the resistive volume. The terminal, the pad, and the electrically resistive volume cooperate to form a passive component associated with at least one device interconnection. The passive component preferable comprises an integral resistor. The integral resistor serves to eliminate or at least substantially reduce electrical resonances and reflections that may otherwise degrade the signal integrity.

Abstract: A microelectronic assembly, such as a surface-mount device or a ball-grid array (BGA) package, has one or more integral resistors. The integral resistors are incorporated into one or more of the microelectronic assembly's electrical leads or connections. The integral resistors preferably terminate in a solderable pad. For example, the BGA package may include an IC chip and interposer. A terminal is located on a surface of the IC chip, on a surface of the interposer, or on the surface of the substrate to which the BGA is mounted. An electrically-resistive material overlies the terminal and electrically couples the terminal to a bond pad, thereby defining an integral resistor. The integral resistors reduce electrical resonances and reflections that may otherwise degrade the signal integrity and reliability of the electrical system employing the device; hence, reduce or eliminate the requirement for discrete resistors for the microelectronic assembly.

Abstract: A selectively filled thermally curable adhesive film (10) contains a fluxing agent for reflow soldering an electronic device to a substrate. The adhesive film has a central, region (12) and a boundary region (14) surrounding the central region. The central region consists of an adhesive that is filled with an inert filler to reduce the co-efficient of thermal expansion of the adhesive. The boundary region consists of an unfilled adhesive and a fluxing agent. The film may be used to adhesively bond a flip chip semiconductor die (20) to a substrate (21). When solder bumps (22) on the die are reflowed, the fluxing agent acts to remove any oxides present on the solderable surfaces of the substrate or the die.

Abstract: An electrorheological fluid that includes a dispersed particulate phase of anhydrous amorphous ceramic particles. The anhydrous amorphous ceramic particles can be of a very precisely tailored composition that is unavailable in crystalline form, for obtaining enhanced electrorheological response. The amorphous particles are substantially free of water when used, and have reduced tendency to absorb water in use. Accordingly, the electrorheological fluid containing anhydrous amorphous electrorheologically responsive ceramic particles has wide applicability for use, and enhanced durability in such use.