Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that that has in its backbone, side chains, or both backbone and side chains, multiple hydrophilic groups that are represented by the following structure: —C—O—C—. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is has in its backbone, side chains, or both backbone and side chains, multiple secondary or tertiary amide groups that are represented by the following acetamide structure: >N—C(?O)—. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic poly(vinyl alcohol) having a degree of hydrolysis of less than 95%. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A deposition inhibitor composition includes two compatible solvents. The first solvent has a vapor pressure of at least 10 mm Hg at room temperature and the second solvent has a vapor pressure of less than that of the first solvent. The composition further includes a hydrophilic deposition inhibitor material that is dissolved in the composition. This material is soluble in an aqueous solution that comprises at least 50% by weight of water and has a free acid content of less than 2.5 meq/g. This composition is useful to provide a deposition inhibitor pattern for chemical vapor deposition methods such as an atomic-layer-deposition method for forming a patterned thin film includes applying a hydrophilic deposition inhibitor material to a substrate.

Abstract: A method for inhibiting pest infestation. The method includes introducing a pest-killing material into an interior compartment of a closed piece of luggage, thereby exterminating pests residing within the interior compartment.

Abstract: A fluid conveyance system for thin film material deposition includes a fluid distribution manifold and a substrate transport mechanism. The fluid distribution manifold includes an output face that includes a plurality of elongated slots. The output face of the fluid distribution manifold is positioned opposite a first surface of the substrate such that the elongated slots face the first surface of the substrate and are positioned proximate to the first surface of the substrate. The substrate transport mechanism causes a substrate to travel in a direction and includes a flexible mechanism that contacts a second surface of the substrate in a region that is proximate to the output face of the fluid distribution manifold.

Abstract: A fluid distribution manifold includes a first plate and a second plate. The first plate includes a length dimension, a width dimension, and a thickness that allows the first plate to be deformable over at least one of the length dimension and the width dimension of the first plate. The second plate includes a length dimension, a width dimension, and a thickness that allows the second plate to be deformable over at least one of the length dimension and the width dimension of the second plate. At least a portion of at least the first plate and the second plate define a relief pattern that defines a fluid flow directing path. The first plate and the second plate are bonded together to form a non-planar shape in a height dimension along at least one of the length dimension and the width dimension.

Abstract: A fluid distribution manifold includes a first plate and a second plate. At least a portion of at least the first plate and the second plate define a relief pattern. A metal bonding agent is disposed between the first plate and the second plate such that the first plate and the second plate form a fluid flow directing pattern defined by the relief pattern.

Abstract: A fluid conveyance device for thin film material deposition includes a substrate transport mechanism that causes a substrate to travels in a direction. A fluid distribution manifold includes an output face. The output face includes a plurality of elongated slots. At least one of the elongated slots includes a portion that is non-perpendicular and non-parallel relative to the direction of substrate travel.

Abstract: A fluid conveyance system for thin film material deposition includes a first fluid distribution manifold and a second distribution manifold. The first fluid distribution manifold includes an output face that includes a plurality of elongated slots. The plurality of elongated slots includes a source slot and an exhaust slot. The second fluid distribution manifold includes an output face that includes a plurality of openings. The plurality of openings include a source opening and an exhaust opening. The second fluid distribution manifold is positioned spaced apart from and opposite the first fluid distribution manifold such that the source opening of the output face of the second fluid distribution manifold mirrors the source slot of the output face of the first fluid distribution manifold and the exhaust opening of the output face of the second fluid distribution manifold mirrors the exhaust slot of the output face of the first fluid distribution manifold.

Abstract: A fluid conveyance system for thin film material deposition is provided. A first fluid distribution manifold includes an output face that includes a plurality of elongated slots. The plurality of elongated slots include a source slot and an exhaust slot. A gas source is in fluid communication with the source slot. The gas source is configured to provide a gas to the output face of the distribution manifold. A gas receiving chamber is in fluid communication with the exhaust slot. The gas receiving chamber is configured to collect the gas provided to the output face of the distribution manifold through the exhaust slot. A sensor positioned to sense a parameter of the gas traveling from the gas source to the gas receiving chamber. A controller is connected in electrical communication with the sensor. The controller is configured to modify an operating parameter of the conveyance system based on data received from the sensor.

Abstract: A fluid distribution manifold includes a first plate and a second plate. At least a portion of at least the first plate and the second plate define a relief pattern. At least one of the first plate and the second plate include a mirrored surface finish. A bonding agent is disposed between the first plate and the second plate such that the first plate and the second plate form a fluid flow directing pattern defined by the relief pattern.

Abstract: A fluid conveyance device for thin film material deposition includes a fluid distribution manifold, a primary chamber, and a secondary fluid source. The fluid distribution manifold includes an output face that is connected in fluid communication to the primary chamber. The secondary fluid source is connected in fluid communication to the primary chamber through a plurality of conveyance ports.

Abstract: A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

Abstract: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.

Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

Abstract: A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.