Abstract: A local interconnection to a device region in/on a substrate is formed by depositing either silicon oxynitride or silicon oxime as an etch stop layer, at a temperature of less than about 480.degree. C. to increase the hot carrier injection (HCI) lifetime of the resulting semiconductor device. A dielectric layer is then deposited over the etch stop layer and through-holes are etched exposing the etch stop layer using a first etching process. A second etching process is then conducted, which etches through the etch stop layer exposing at least one device region. The resulting through-hole is then filled with conductive material(s) to form a local interconnection.

Abstract: During damascene formation of local interconnects in a semiconductor wafer, a punch-through region can be formed into the substrate as a result of exposing the oxide spacers that are adjacent to a transistor gate to one or more etching plasmas that are used to etch one or more overlying dielectric layers. A punch-through region can damage the transistor circuit. Improved, multipurpose spacers are provided to reduce the chances of over-etching. The multipurpose spacers are made of silicon oxime. The etching plasmas that are used to etch one or more overlying dielectric layers tend to have a higher selectivity ratio to the multipurpose spacers than to the conventional oxide spacers. Additionally, the multipurpose spacers do not tend to degrade the hot carrier injection (HCI) properties as would a typical nitride spacer.

Abstract: A semiconductor memory device such as a flash Electrically Erasable Programmable Read-Only Memory (Flash EEPROM) includes a floating gate with high data retention. A tungsten damascene local interconnect structure includes a silicon oxynitride etch stop layer which is formed using Plasma Enhanced Chemical Vapor Deposition (PECVD) at a temperature of at least 480.degree. C. such that the etch stop layer has a very low concentration of hydrogen ions. The minimization of hydrogen ions, which constitute mobile positive charge carriers, in the etch stop layer, minimizes recombination of the hydrogen ions with electrons on the floating gate, and thereby maximizes data retention of the device.

Abstract: A gate is formed on a semiconductor substrate by using a bottom anti-reflective coating (BARC) to better control the critical dimension (CD) of the gate as defined via a deep-UV resist mask formed thereon. The wafer stack includes a gate oxide layer over a semiconductor substrate, a polysilicon gate layer over the gate oxide layer, a SiON BARC over the conductive layer, a thin oxide film over the SiON BARC. The resist mask is formed on the oxide film. The SiON BARC improves the resist mask formation process. The wafer stack is then shaped to form one or more polysilicon gates by sequentially etching through selected portions of the oxide film, the BARC, and the gate conductive layer as defined by the etch windows in the resist mask. Once properly shaped, the remaining portions of the resist mask, oxide film and SiON BARC are removed.

Abstract: During damascene formation of local interconnects in a semiconductor wafer, a punch-through region can be formed into the substrate as a result of exposing the oxide spacers that are adjacent to a transistor gate to one or more etching plasmas that are used to etch one or more overlying dielectric layers. A punch-through region can damage the transistor circuit. In order to prevent punch-through, the oxide spacers are removed prior to forming an overlying dielectric layer.

Abstract: A silicon oxime film is formed by plasma enhanced chemical vapor deposition. The silicon oxime film is useful as an anti-reflection layer during photolithography, as an etch stop, and as a protection layer.