Abstract: The present invention proposes a sub-wavelength luminescence sensor, such as e.g. a luminescence biosensor or a luminescence chemical sensor, comprising at least two wire grids (1, 2) positioned perpendicular with respect to each other. The luminescence sensor, in which the excitation radiation is efficiently used and the luminescence radiation is efficiently detected, has an improved signal-to-noise ratio and a separated excitation and luminescence radiation.

Abstract: The present invention provides a luminescence sensor (2), such as e.g. a luminescence biosensor, comprising a multi-layer structure. The multi-layer structure comprises at least a first layer (2a) formed of a first material and a second layer (2b) formed of a second material. The first material has a first binding capacity towards luminophores and the second material has a second binding capacity towards luminophores, the first binding capacity being different from the second binding capacity. The luminescence sensor (2) according to the present invention shows a high sensitivity because it provides preferred binding sites for luminophores at locations where the combined excitation and detection efficiency is the highest.

Abstract: A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

Abstract: The invention relates to a radiation system for generating a beam of radiation. The radiation system includes an extreme ultraviolet source constructed and arranged to generate extreme ultraviolet radiation, a contamination barrier constructed and arranged to trap contamination from the radiation source, and a temperature sensor constructed and arranged to sense a temperature of the contamination barrier.

Abstract: A debris mitigation system for trapping contaminant material coming from a debris-generating radiation source. The system includes a contamination barrier constructed and arranged to rotate about an axis, and a magnet structure constructed and arranged to provide a magnetic field for deflecting charged debris from the radiation source. The magnet structure is constructed and arranged to provide a magnetic field through the contamination barrier. The magnetic field, when passing through the contamination barrier, is oriented along planes generally coinciding with the axis of rotation of the contamination barrier.

Abstract: An EUV illumination system, for example, for use in a photolithographic apparatus is configured to condition a radiation beam. A hydrogen radical source configured to supply gas containing hydrogen or hydrogen radicals into the illumination system. The hydrogen gas is effective to remove carbonaceous contamination from the surface of a mirror in the illumination system or to form a buffer against unwanted gases. In order to prevent damage by hydrogen that penetrates the mirror, the mirror comprises a layer made of metal non-metal compound adjacent a reflection surface of the mirror. A transition metal carbide, nitride, boride or silicide compound or mixture thereof may be used for example.

Abstract: The invention relates to a radiation system for generating electromagnetic radiation. The radiation system includes a pair of electrodes constructed and arranged to generate plasma of a first substance and a pinch in the plasma. The radiation system also includes a plasma recombination surface that is arranged proximate to the pinch, and is configured to neutralize a plurality of plasma particles.

Abstract: A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

Abstract: An EUV lithographic apparatus includes an EUV radiation source, an optical element and a cleaning device. The cleaning device includes a hydrogen radical source and a flow tube in communication with the hydrogen radical source. The cleaning device is configured to provide a flow of hydrogen radicals and the flow tube is arranged to provide a hydrogen radical flow at a predetermined position within the lithographic apparatus, for example for cleaning a collector mirror.

Abstract: A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

Abstract: An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.

Abstract: A multi-layer mirror includes on top of the multi-layer mirror a spectral purity enhancement layer, for example for application in an EUV lithographic apparatus. This spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may optionally be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. Hence, multi-layer mirrors with the following configurations are possible: multi-layer mirror/first spectral purity enhancement layer; multi-layer mirror/intermediate layer/first spectral purity enhancement layer; and multi-layer mirror/second spectral purity enhancement layer/intermediate layer/first spectral purity enhancement layer. The spectral purity of normal incidence radiation may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.

Abstract: A radiation system for providing a projection beam of radiation is disclosed. The radiation system includes an extreme ultraviolet source for providing extreme ultra violet radiation, and a contamination barrier that includes a plurality of closely packed foil plates for trapping contaminant material coming from the radiation source. The contamination barrier encloses the extreme ultraviolet radiation source.

Abstract: A cleaning arrangement is provided for use in an EUV lithographic apparatus, for example an EUV lithographic apparatus with a Sn source. The cleaning arrangement includes a gas source for a hydrogen containing gas and a hydrogen radical source. The hydrogen radical source is a source of (UV) radiation which induces photo dissociation of the hydrogen. Radicals may reduce Sn oxides (if present) and my form volatile hydrides of Sn deposition and/or carbon deposition. In this way the cleaning arrangement can be used to clean optical elements from Sn and/or C deposition. The EUV source may be used as hydrogen radical source. An optical filter is used to remove undesired EUV radiation and transmit desired UV radiation.

Abstract: A radiation system for generating a beam of radiation is disclosed. The radiation system includes a pulsed EUV source for generating EUV radiation, and a spectral filter mounted in front of the EUV source for selectively passing a spectral range of a beam of EUV radiation from the EUV source. The spectral filter is mounted on a movable mount configured to be moved in synchronicity with the pulsed EUV source to prevent debris traveling from the EUV source from impacting the spectral filter. Accordingly, the spectral filter is kept substantially free from contamination by the debris.

Abstract: A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 m3 in communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa). The cleaning arrangement may further include a gas return system.

Abstract: An optical element including an anti-reflection (AR) coating is configured to reflect Extreme-Ultra-Violet (EUV) radiation only.

Abstract: A debris trapping system for trapping debris particles released with the generation of radiation by a radiation source in a lithographic apparatus includes first and second sets of channels. Each channel of the first set enables radiation from a radiating source to propagate therethrough and has an inner wall for catching debris particles. The second set of channels is situated downstream of the first set with respect to a propagation direction of the radiation. Each channel of the second set enables radiation from the radiating source to also propagate therethrough and has an inner wall for catching debris particles. A gas supply and a gas exhaust are configured to provide between the first set and the second set of channels a gas flow having a net flow direction substantially across the propagation direction of the radiation from a radiating source.

Abstract: Particles emitted by a radiation source, and moving from the radiation source towards a processing system for processing the radiation from the radiation source, are filtered out of radiation propagating through a predetermined cross section of the radiation as emitted by the radiation source by a filter system. The filter system includes a plurality of foils and a transporter for transporting the foils along a trajectory which extends within the beam so that the foils intercept the particles within the beam. The transporter is arranged to transport the foils by a substantially translatory movement of the foils along at least a part of the trajectory.