Abstract: The disclosure provides an illumination system of a microlithographic projection device having an image plane, in which a mask can be arranged, and a first object plane, which is optically conjugate to the image plane. A first illumination optical unit illuminates the first object plane with first projection light so that the first projection light has a first illumination angle distribution in the image plane. A second illumination optical unit illuminates a second object plane, which is optically conjugate to the image plane, with second projection light so that the second projection light has a second illumination angle distribution differing from the first illumination angle distribution in the image plane. An optical integrator is arranged exclusively in the light path of the first projection light.

Abstract: A microlithographic exposure system includes a catadioptric projection objective that includes a plurality of lenses and at least one concave mirror arranged as first, second, and third objective parts. The system also includes a plurality of manipulators each coupled to a respective optical element, each manipulator coupled to a lens being configured to adjust the respective lens, and a manipulator coupled to the at least one concave mirror being configured to vary a shape of the concave mirror. A scanning system is configured to move the mask and wafer relative to the objective. A control system is programmed to synchronize operation of the manipulators and the scanning system to vary a field curvature and a distortion of the catadioptric projection objective, and least one of the lenses is adjusted during motion of the mask and wafer relative to the objective.

Abstract: A method of reducing image placement errors in a microlithographic projection exposure apparatus includes providing a mask, a light sensitive layer and a microlithographic projection exposure apparatus which images features of the mask onto the light sensitive surface using projection light. Subsequently, image placement errors associated with an image of the features formed on the light sensitive surface are determined either by simulation or metrologically. Then an input state of polarization of the projection light is changed to an elliptical output state of polarization which is selected such that the image placement errors are reduced.

Abstract: A tugboat for assisting cargo vessels has the following features: at least one propelling unit and a tow line for establishing a pulling connection between the cargo vessel and the tugboat. A measuring device measures the bollard pull and a central processing unit records the measurement result and forms a control command relating to the propelling force and/or the propelling direction for propelling purposes.

Abstract: A projection exposure method includes exposing an exposure area of a radiation sensitive substrate with at least one image of a pattern of a mask in a scanning operation. The scanning operation includes moving the mask relative to an effective object field of the projection objective and simultaneously moving the substrate relative to an effective image field of the projection objective in respective scanning directions. The projection exposure method also includes changing imaging properties of the projection objective actively during the scanning operation according to a given time profile to change dynamically at least one aberration of the projection objective between a beginning and an end of the scanning operation.

Abstract: A method of operating a projection exposure tool for microlithography is provided. The projection exposure tool has a projection objective for imaging object structures on a mask into an image plane using electromagnetic radiation, during which imaging the electromagnetic radiation causes a change in optical properties of the projection objective.

Abstract: A projection exposure method includes exposing an exposure area of a radiation sensitive substrate with at least one image of a pattern of a mask in a scanning operation. The scanning operation includes moving the mask relative to an effective object field of the projection objective and simultaneously moving the substrate relative to an effective image field of the projection objective in respective scanning directions. The projection exposure method also includes changing imaging properties of the projection objective actively during the scanning operation according to a given time profile to change dynamically at least one aberration of the projection objective between a beginning and an end of the scanning operation.