Abstract: Provided is a cache memory device including a command reception unit for packetizing each of read commands and write commands and classifying them as even or odd; a cache scheduler comprising a first reorder scheduling queue for receiving commands classified as even numbers from the command reception unit and scheduling the commands classified as even numbers for cache memory accesses and a second reorder scheduling queue for receiving commands classified as odd numbers from the command reception unit and scheduling the commands classified as odd numbers for cache memory accesses; and an access execution unit for performing cache memory accesses via a cache tag to scheduled commands classified as even numbers and scheduled commands classified as odd numbers.

Abstract: A controller includes an Error Correction Code (ECC) encoder adding a first parity to data to generate a data set, and encoding the data set to generate a first parity data set, a buffer temporarily storing the first parity data set, an ECC decoder decoding the first parity data set received from the buffer to generate a decoded data set, a first checker performing a Low Density Parity Check (LDPC) encoding on the decoded data set to generate an LDPC data set to which a second parity is added, and a second checker performing a syndrome check operation on the LDCP data set including the first and second parities.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: As one aspect of the present disclosure, a byte-addressable device is disclosed. The device may include: a volatile memory device; and a controller configured to be connected with a host processor, the volatile memory device, and a non-volatile storage device, wherein the controller may be further configured to communicate with the volatile memory device and the non-volatile storage device based on address information included in a request received from the host processor.

Abstract: The present technology relates to an electronic device. According to the present technology, a storage device having an improved operation speed may include a nonvolatile memory device, a main memory configured to temporarily store data related to controlling the nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device and the main memory under control of an external host. The main memory may aggregate and process a number of write transactions having continuous addresses, among write transactions received from the memory controller, equal to a burst length unit of the main memory.

Abstract: The present technology relates to an electronic device. A memory controller that increases a hit ratio of a cache memory includes a memory buffer configured to store command data corresponding to a request received from a host, and a cache memory configured to cache the command data. The cache memory stores the command data by allocating cache lines based on a component that outputs the command data and a flag included in the command data.

Abstract: Proposed are a substrate processing apparatus and a substrate processing method capable of efficiently preventing contamination of a substrate and a processing space caused by a reverse flow of purge gas.

Abstract: An operation method includes buffering data chunks to be programmed in the multi-level cells in a write buffer; backing up at least one backup data chunk of the data chunks to a backup memory; determining a program sequence of the data chunks, the program sequence for programming a non-backup data chunk among the data chunks to the multi-level cells through a second step program operation of the multi-step program operation; and controlling the memory device to program the data chunks in the multi-level cells, based on the program sequence, by performing first and second step program operations of the multi-step program operation in a first page of the multi-level cells, the second step program operation performed in the first page later than another first step program operation performed in a second page subsequent to the first page.

Abstract: Provided are a steel cord and a single steel wire having excellent straightness quality for reinforcing tire and a method of manufacturing the steel cord and single steel wire. The steel cord and the single steel wire include a wire undergoing through a drawing process, a heating process performed in a state in which tension is applied to the wire, and a cooling process; and a winding portion on which the wire is wound, the winding portion having a diameter greater than a diameter of the wire, wherein, when an end of the wire that has been wound on the winding portion for six months to one year is fixed on a point and the wire is pulled down vertically to 400 mm, a distance between a first axis that is perpendicular to the point and an opposite end of the wire is 30 mm or less. The method of manufacturing the steel cord and single steel wire having excellent straightness quality for reinforcing tire includes: a wire preparing process, a heating process, a cooling process, and a winding process.

Abstract: An operation method includes buffering data chunks to be programmed in the multi-level cells in a write buffer; backing up at least one backup data chunk of the data chunks to a backup memory; determining a program sequence of the data chunks, the program sequence for programming a non-backup data chunk among the data chunks to the multi-level cells through a second step program operation of the multi-step program operation; and controlling the memory device to program the data chunks in the multi-level cells, based on the program sequence, by performing first and second step program operations of the multi-step program operation in a first page of the multi-level cells, the second step program operation performed in the first page later than another first step program operation performed in a second page subsequent to the first page.

Abstract: A memory controller includes a buffer memory configured to store first meta data and second meta data having a different type from the first meta data, and a cache memory including first and second dedicated areas. The first meta data is cached in the first dedicated area and the second meta data is cached in the second dedicated area.

Abstract: A controller for controlling a memory device is provided to include: a request receiver configured to receive a request including a logical address from a host; a dependency checker configured to acquire the request from the request receiver and check a dependency of the request; a map manager configured to generate a command including a physical address mapped to the logical address of the request in response to a result of checking that the request has no dependency on the prior incomplete request; and a command submitter configured to provide the memory device with the command generated by the map manager, wherein the request receiver, the dependency checker, the map manager and the command submitter are structured to configure a data pipeline such that operations of the request receiver, the dependency checker, the map manager, and the command submitter deliver are performed in series.

Abstract: There are provided a memory system and an operating method thereof. The memory system includes: a memory device for storing data in a program operation, and reading stored data and temporarily store the read data in a read operation; and a controller for transmitting data to the memory device, wherein the controller includes: a flash direct memory access (DMA) for reading and outputting the data temporarily stored in the memory device in the read operation; a buffer memory for storing the data output from the flash DMA; and a host DMA for reading the data stored in the buffer memory and outputting the read data to a host, wherein a first operation of storing the data temporarily stored in the memory device in the buffer memory and a second operation of outputting the data stored in the buffer memory to the host are performed in parallel.

Abstract: An electronic device includes a memory controller having an improved operation speed. The memory controller includes a processor configured to generate commands for accessing data stored in a main memory, a scheduling circuit configured to store the commands and output the commands according to a preset criterion, and a filtering circuit configured to store information on an address of the main memory corresponding to a write command among the commands, provide a pre-completion response for the write command to the scheduling circuit upon receiving the write command, and provide the write command to the main memory.

Abstract: A backlight unit and a display device including the backlight unit are provided. A backlight unit includes a substrate, light sources disposed on one surface of the substrate, a first reflective film disposed on one surface of the substrate and including first openings, each of the first openings of the first reflective film exposing each of the light sources, and wavelength filter layers disposed above the first reflective film and disposed to correspond to the first openings, the wavelength filter layers are spaced apart from each other, and each of the wavelength filter layers covers at least one of the first openings.

Abstract: An electronic device includes a memory controller having an improved operation speed. The memory controller includes a main memory, a processor configured to generate commands for accessing data stored in the main memory, a scheduler configured to store the commands and output the commands according to a preset criterion, a cache memory configured to cache and store data accessed by the processor among the data stored in the main memory, and a hazard filter configured to store information on an address of the main memory corresponding to a write command among the commands, provide a pre-completion response for the write command to the scheduler upon receiving the write command, and provide the write command to the main memory.

Abstract: A lower sheet disposed below a display panel includes a heat radiation layer having a first side and a second side facing the first side. A first film layer is disposed on the first side of the heat radiation layer. A second film layer is disposed on the second side of the heat radiation layer. A first resin layer is disposed between the heat radiation layer and the first film layer. A second resin layer is disposed between the heat radiation layer and the second film layer. A sealing layer is disposed on lateral sides of the heat radiation layer. The sealing layer directly contacts an entirety of the lateral sides of the heat radiation layer, and directly contacts at least a portion of lateral sides of the first resin layer and the second resin layer.

Abstract: An electronic device includes a memory controller having an improved operation speed. The memory controller includes a processor configured to generate commands for accessing data stored in a main memory, a scheduling circuit configured to store the commands and output the commands according to a preset criterion, and a filtering circuit configured to store information on an address of the main memory corresponding to a write command among the commands, provide a pre-completion response for the write command to the scheduling circuit upon receiving the write command, and provide the write command to the main memory.

Abstract: A controller includes an Error Correction Code (ECC) encoder adding a first parity to data to generate a data set, and encoding the data set to generate a first parity data set, a buffer temporarily storing the first parity data set, an ECC decoder decoding the first parity data set received from the buffer to generate a decoded data set, a first checker performing a Low Density Parity Check (LDPC) encoding on the decoded data set to generate an LDPC data set to which a second parity is added, and a second checker performing a syndrome check operation on the LDCP data set including the first and second parities.

Abstract: An operation method includes buffering data chunks to be programmed in the multi-level cells in a write buffer; backing up at least one backup data chunk of the data chunks to a backup memory; determining a program sequence of the data chunks, the program sequence for programming a non-backup data chunk among the data chunks to the multi-level cells through a second step program operation of the multi-step program operation; and controlling the memory device to program the data chunks in the multi-level cells, based on the program sequence, by performing first and second step program operations of the multi-step program operation in a first page of the multi-level cells, the second step program operation performed in the first page later than another first step program operation performed in a second page subsequent to the first page.