Abstract: The present disclosure provides autotaxin (ATX) inhibitor compounds and compositions including said compounds. The present disclosure also provides methods of using said compounds and compositions for inhibiting ATX. Also provided are methods of preparing said compounds and compositions, and synthetic precursors of said compounds.

Abstract: A wafer level package includes: a substrate; an element portion disposed on one surface of the substrate; a cap disposed on the substrate to cover the element portion; a connection portion electrically connected to the element portion; and a bonding portion disposed on an outer side of the connection portion, wherein the bonding portion is disposed on a first surface of one of the substrate and the cap, wherein one end portion of the connection portion is disposed on a second surface having a step difference from the first surface, and wherein the connection portion and the bonding portion are formed of a eutectic material.

Abstract: A polymer electrolyte membrane having improved chemical or mechanical durability is provided. The present disclosure relates to a polymer electrolyte membrane, and the polymer electrolyte membrane according to the present disclosure comprises a porous support and a composite layer containing a first ionomer filled in the porous support, wherein the polymer electrolyte membrane comprises a first segment having a first durability and a second segment having a second durability, and the first durability is higher than the second durability.

Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.

Abstract: A monoclonal antibody or an antigen-binding fragment thereof according to an embodiment of the present invention can bind to lymphocyte-activation gene 3 (LAG-3) including a heavy chain variable region and a light chain variable region and inhibit the activity thereof. Thus it is expected to be useful for the development of immunotherapeutic agents for various disorders that are associated with LAG-3.

Abstract: The present invention relates to an image encoding and decoding technique, and more particularly, to an image encoder and decoder using unidirectional prediction. The image encoder includes a dividing unit to divide a macro block into a plurality of sub-blocks, a unidirectional application determining unit to determine whether an identical prediction mode is applied to each of the plurality of sub-blocks, and a prediction mode determining unit to determine a prediction mode with respect to each of the plurality of sub-blocks based on a determined result of the unidirectional application determining unit.

Abstract: Disclosed herein is an image sensing apparatus including a driver disposed on a substrate and configured to drive a light emitter and a light receiver to emit a first optical signal toward an object and receive a second optical signal reflected from the object, a housing coupled to the substrate and surrounding the light emitter, the light receiver, and the driver, a diffuser disposed on the housing, and a transparent electrode disposed on the diffuser, wherein the driver includes a transparent electrode driver configured to detect whether the diffuser is damaged in a first mode and shields electromagnetic interference noise in a second mode by using the transparent electrode.

Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: An optical imaging system includes a first lens having positive refractive power, a second lens having negative refractive power, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, and an eighth lens disposed in order from an object side. A refractive index of the second lens is greater than a refractive index of each of the first lens and the third lens. The optical imaging system satisfies TTL/(2×IMG HT)<0.6 and 0<f1/f<1.4, where TTL is a distance on an optical axis from an object-side surface of the first lens to an imaging plane, IMG HT is half a diagonal length of the imaging plane, f is a total focal length of the optical imaging system, and f1 is a focal length of the first lens.

Abstract: A bulk-acoustic wave (BAW) resonator includes a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion extending externally from the central portion, and an insertion layer and a loss prevention film are disposed in the extension portion between the substrate and the second electrode. The loss prevention film is formed to have a thickness of 50 ? to 500 ?. The insertion layer is stacked on the loss prevention film, and has a side surface opposing the central portion, the side surface is formed as a first inclined surface having a first inclination angle. The loss prevention film has a side surface opposing the central portion, the side surface is formed as a second inclined surface having a second inclination angle. The second inclination angle is formed to be greater than the first inclination angle.

Abstract: A method of modifying the surface of a coating layer applied to a substrate includes a step (s1) of preparing a substrate by performing pretreatment, a step (s2) of coating the substrate with a coating layer, and a step (s3) of modifying the surface of the coating layer by vibrating the substrate in the vertical direction. The surface modification method does not include a separate chemical process.

Abstract: A method of modifying the surface of a coating layer applied to a substrate is disclosed. The surface modification method includes a step (s1) of preparing a substrate by performing pretreatment, a step (s2) of coating the substrate with a coating layer, and a step (s3) of modifying the surface of the coating layer by vibrating the substrate in the vertical direction. The surface modification method does not include a separate chemical process and is thus environmentally friendly and economically advantageous.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.