Abstract: The present invention discloses a method for manufacturing a capacitor of a semiconductor memory device. The disclosed present invention comprises steps of forming a lower electrode made of a conductive polysilicon film or a conductive amorphous silicon film on a semiconductor substrate; forming a nitride film over the lower electrode; depositing an amorphous TaON thin film over the nitride film; subjecting the amorphous TaON thin film to a thermal treatment to effect a crystallization thereof; and forming a laminated structure composed of a TiON film and a doped silicon film for an upper electrode on the crystallized TaON thin film.

Abstract: The present invention relates to a method of manufacturing a capacitor in a semiconductor device capable of improving the leak current characteristic while preventing degradation of a dielectric characteristic of a Ta2O5 capacitor. The present invention includes forming a Ta2O5 dielectric film on a lower electrode and then forming a TaN upper electrode on the Ta2O5 dielectric film using a H2TaF7 reactive source gas or a NH3 gas. Thus, the present invention can improve the leak current characteristic since the TaN thin film has a large work function than the TiN thin film used as the conventional upper electrode. Also, as the H2TaF7 gas used in the present invention can be used as the source gas for depositing the Ta2O3 dielectric film, the Ta2O5 dielectric film and the TaN upper electrode can be simultaneously formed in in-situ at the same chamber.

Abstract: A method for manufacturing a capacitor using a tantalum oxy nitride (TaON) film in a process for a semiconductor device. More particularly, a method for manufacturing a capacitor which reduces a number of steps and thus increases yield by in-situ performing P-doping after forming a MPS (Metastable Poly Silicon) on a lower electrode and forming a nitride film before forming a tantalum oxy nitride film to prevent the concentration of phosphor contained in the lower electrode from being reduced by removing the phosphor on the surface of the lower electrode in a cleaning process between the above two steps, for thereby increasing the capacitance of the capacitor.

Abstract: The present invention discloses a method for manufacturing a capacitor of a semiconductor memory device.

Abstract: Disclosed herein is a method of forming a capacitor for a semiconductor memory device. The method comprises a step of:forming a lower electrode on the semiconductor substrate; forming an O3-oxide film on the lower electrode; forming Si—O—N bonds on the surface of the O3-oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O2 gas and an NH3 gas; and forming an upper electrode on the TaON film.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: A method for forming a gate insulating film for a semiconductor device comprising forming an insulating film of silicon nitride or silicon oxynitride in the active regions of the semiconductor substrate; forming an amorphous TaON insulating film on the insulating film; and crystallizing the amorphous TaON insulating film. Using TaON as the primary gate insulating film provides a high dielectric constant (∈=20˜25), and thus produces a gate insulating film having properties superior to those possible with silicon dioxide gate films and thus more suitable for use in highly integrated semiconductor devices.

Abstract: A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.

Abstract: A method for forming a gate insulating film for a semiconductor device comprising forming an insulating film of silicon nitride or silicon oxynitride in the active regions of the semiconductor substrate; forming an amorphous TaON insulating film on the insulating film; and crystallizing the amorphous TaON insulating film. Using TaON as the primary gate insulating film provides a high dielectric constant (&egr;=20˜25), and thus produces a gate insulating film having properties superior to those possible with silicon dioxide gate films and thus more suitable for use in highly integrated semiconductor devices.

Abstract: An strain measuring apparatus for analyzing the stability of a steel structure and a method thereof employs a controller for receiving a variation difference amount from the strain gauge input unit measured using a strain gauge between a strain degree obtained by applying a weight to a steel structure and a strain degree obtained by applying a weight to a steel structure having a hole formed at a predetermined portion and measuring a strain existing in the steel structure based on the variation amount using particular equations. A control command input unit inputs an initialization command for initialing the existing strain measuring apparatus, a radius of the hole formed in the steel structure, a distance between the center of the hole and the center of the strain gauge attached to the steel structurc and an external operating signal including a proceeding command which represents a testing procedure into the controller.