Patents by Inventor Douglas A. Keszler
Douglas A. Keszler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10782610Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: GrantFiled: October 16, 2017Date of Patent: September 22, 2020Assignee: Inpria CorporationInventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Publication number: 20200292937Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: ApplicationFiled: May 28, 2020Publication date: September 17, 2020Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Patent number: 10775696Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: January 3, 2019Date of Patent: September 15, 2020Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20200270742Abstract: An amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, and platinum; and 1 at % to 90 at % of cerium. The three elements may account for at least 50 at % of the amorphous thin metal film.Type: ApplicationFiled: June 24, 2016Publication date: August 27, 2020Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., The State of Oregon State Board of Higher Education on behalf of Oregon State UniversityInventors: James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Douglas A Keszler, John Wager, Roberto A Pugliese, William F Stickle, Greg Scott Long
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Publication number: 20200257196Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: April 29, 2020Publication date: August 13, 2020Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 10732505Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: April 29, 2020Date of Patent: August 4, 2020Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20200207634Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.Type: ApplicationFiled: December 17, 2019Publication date: July 2, 2020Applicants: University of Oregon, Oregon State UniversityInventors: Brantly Fulton, Milton N. Jackson, JR., Darren W. Johnson, Shannon W. Boettcher, Cory K. Perkins, Douglas A. Keszler, James E. Hutchison
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Patent number: 10642153Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: GrantFiled: October 22, 2015Date of Patent: May 5, 2020Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph Burton Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Publication number: 20200064733Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: ApplicationFiled: November 5, 2019Publication date: February 27, 2020Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Patent number: 10513442Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.Type: GrantFiled: July 8, 2016Date of Patent: December 24, 2019Assignees: University of Oregon, Oregon State UniversityInventors: Brantly Fulton, Milton N. Jackson, Jr., Darren W. Johnson, Shannon W. Boettcher, Cory K. Perkins, Douglas A. Keszler, James E. Hutchison
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Publication number: 20190369489Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: ApplicationFiled: August 9, 2019Publication date: December 5, 2019Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Patent number: 10449763Abstract: An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.Type: GrantFiled: June 24, 2016Date of Patent: October 22, 2019Assignees: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., Oregon State UniversityInventors: James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Roberto A Pugliese, Greg Scott Long, Douglas A Keszler, John Wager
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Patent number: 10416554Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: GrantFiled: June 13, 2018Date of Patent: September 17, 2019Assignee: Inpria CorporationInventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Publication number: 20190137870Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: January 3, 2019Publication date: May 9, 2019Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20190119101Abstract: An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.Type: ApplicationFiled: June 24, 2016Publication date: April 25, 2019Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., The State of Oregon State Board of Higher Education on behalf of Oregon State UniversityInventors: James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Roberto A Pugliese, Greg Scott Long, John Wager, Douglas A Keszler, T. Stafford Johnson, William F Stickel
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Publication number: 20190100007Abstract: An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.Type: ApplicationFiled: June 24, 2016Publication date: April 4, 2019Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., The State of Oregon State Board of Higher Education on behalf of Oregon State UniversityInventors: James Elmer Abbott, Jr., John M McGlone, Kristopher Olsen, Roberto A Pugliese, Greg Scott Long, Douglas A Keszler, John Wager
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Patent number: 10228618Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: October 12, 2016Date of Patent: March 12, 2019Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph Burton Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20190049629Abstract: Disclosed herein are embodiments of a porous aluminum oxide thin film having a surface RMS roughness value of less than 1 nm. The thin film may also comprise phosphorus. The disclosed thin films may have a refractive index of from 1 to 2, such as from 1 to 1.5. Also disclosed are embodiments of as method for making the disclosed thin films, comprising forming an aqueous solution of the alumina precursor, a surfactant and optionally a phosphorus-containing precursor, and depositing the solution on a substrate.Type: ApplicationFiled: October 15, 2018Publication date: February 14, 2019Applicant: Oregon State UniversityInventors: Cory K. Perkins, Ryan Helmut Mansergh, Juan Carlos Ramos, Douglas A. Keszler
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Publication number: 20180307137Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: ApplicationFiled: June 13, 2018Publication date: October 25, 2018Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Publication number: 20180208477Abstract: A method comprising reacting an aluminum mineral polymorph or a gallium mineral polymorph with an acid at an aluminum metal to acid molar ratio or gallium metal to acid molar ratio sufficient to produce M13 nanoscale clusters, M nano-agglomerates, or a M13 slurry, wherein M is Al or Ga.Type: ApplicationFiled: July 8, 2016Publication date: July 26, 2018Applicants: University of Oregon, Oregon State UniversityInventors: Brantly Fulton, Milton N. Jackson, Jr., Darren W. Johnson, Shannon W. Boettcher, Cory K. Perkins, Douglas A. Keszler, James E. Hutchison