Patents by Inventor Douglas A. Keszler
Douglas A. Keszler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10025179Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: GrantFiled: December 29, 2015Date of Patent: July 17, 2018Assignee: Inpria CorporationInventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Publication number: 20180039172Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: ApplicationFiled: October 16, 2017Publication date: February 8, 2018Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Patent number: 9823564Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: GrantFiled: September 18, 2015Date of Patent: November 21, 2017Assignee: Inpria CorporationInventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Publication number: 20170102612Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: October 12, 2016Publication date: April 13, 2017Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph Burton Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 9511585Abstract: The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.Type: GrantFiled: July 12, 2013Date of Patent: December 6, 2016Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: James Elmer Abbott, Jr., Arun K. Agarwal, Roberto A. Pugliese, Greg Scott Long, Stephen Horvath, Douglas A. Keszler, John Wager, Kristopher Olsen, John McGlone
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Publication number: 20160216606Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: ApplicationFiled: December 29, 2015Publication date: July 28, 2016Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
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Publication number: 20160168675Abstract: The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of four metals or metalloids including: 5 at % to 85 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 85 at % of a first metal; 5 at % to 85 at % of a second metal; and 5 at % to 85 at % of a third metal wherein each metal is independently selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the first metal, the second metal, and the third metal are different metals. Typically, the four elements account for at least 70 at % of the amorphous thin metal film.Type: ApplicationFiled: July 12, 2013Publication date: June 16, 2016Applicants: Hewlett-Packard Development Company, L.P., Oregon State UniversityInventors: James Elmer ABBOTT, JR., Arun K. AGARWAL, Roberto A. PUGLIESE, Greg Scott LONG, Stephen HORVATH, Douglas A. KESZLER, John WAGER, Kristopher OLSEN, John MCGLONE
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Publication number: 20160160331Abstract: The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum; and 5 at % to 90 at % of a second metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the second metal is different than the first metal. Typically, the three elements account for at least 70 at % of the amorphous thin metal film.Type: ApplicationFiled: July 12, 2013Publication date: June 9, 2016Applicants: Hewlett-Packard Development Company, L.P., Oregon State UniversityInventors: James Elmer ABBOTT, JR., Arun K. AGARWAL, Roberto A. PUGLIESE, Greg Scott LONG, Stephen HORVATH, John WAGER, Douglas A. KESZLER, Kristopher OLSEN, John MCGLONE
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Patent number: 9340678Abstract: One disclosed embodiment concerns an aqueous inorganic coating precursor solution comprising a mixture of water, polynuclear aluminum hydroxide cations, and polyatomic ligands selected from nitrate (NO3?), nitrite (NO2?), or combinations thereof. In certain embodiments, the composition has a molar concentration ratio of polyatomic ligands to aluminum of less than 3; an aluminum cation concentration of from about 0.01 M to about 3.5 M; and/or a polyatomic anion concentration of from about 0.1 to about 2.5 times the aluminum cation concentration. Embodiments of a method for forming the precursor solution also are disclosed. For example, certain embodiments comprise adding a metal having a sufficient reduction potential to reduce nitric acid to an aqueous solution comprising aluminum nitrate (Al(NO3)3).Type: GrantFiled: June 14, 2011Date of Patent: May 17, 2016Assignee: State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon State UniversityInventors: Douglas A. Keszler, Wei Wang
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Publication number: 20160116839Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: ApplicationFiled: October 22, 2015Publication date: April 28, 2016Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph Burton Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Patent number: 9310684Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: GrantFiled: August 22, 2013Date of Patent: April 12, 2016Assignee: Inpria CorporationInventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy Anderson, Andrew Grenville
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Publication number: 20160075136Abstract: The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.Type: ApplicationFiled: July 12, 2013Publication date: March 17, 2016Applicants: Hewlett-Packard Development Company, L.P., Oregon State UniversityInventors: James Elmer ABBOTT, JR., Arun K. AGARWAL, Roberto A. PUGLIESE, Greg Scott LONG, Stephen HORVATH, Douglas A. KESZLER, John WAGER, Kristopher OLSEN, John MCGLONE
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Patent number: 9281207Abstract: Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible metal oxide layers are generally placed under relatively thin etch resist layers to provide desired etch contrast with underlying substrates and/or antireflective properties. In some embodiments, the metal oxide hardmasks can be used along with an additional hardmask and/or antireflective layers. The metal oxide hardmasks can be etched with wet or dry etching. Desirable processing improvements can be obtained with the solution processible hardmasks.Type: GrantFiled: February 28, 2012Date of Patent: March 8, 2016Assignee: Inpria CorporationInventors: Jason K. Stowers, Stephen T. Meyers, Michael Kocsis, Douglas A. Keszler, Andrew Grenville
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Publication number: 20160027937Abstract: Novel compounds having a formula M1dM2eM3fChg where M1 is a transition metal, a group III, group IV, or group V element, M2 is a group 13, group 14, or group 15 element, and M3 and Ch independently are group 15 or group 16 elements, and a method for making the same are disclosed. The compounds may have a tetrahedrite crystal structure. Also disclosed are novel compounds having a formula A13MCha4 where A1, is a transition metal, M is a transition metal, a group 14 element, a group 15 element or a combination thereof, and Cha is a group 16 element. Also disclosed are methods of making and using the compounds. The compounds may form part of a device. Some devices may comprise both a tetrahedrite and a A13MCha4 compound. Some devices may have an electrical output, for example a photovoltaic device, such as a thin film solar cell.Type: ApplicationFiled: October 7, 2015Publication date: January 28, 2016Applicant: Oregon State UniversityInventors: Douglas A. Keszler, Jeoseok Heo, Robert S. Kokenyesi, Ram Ravichandran
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Publication number: 20160011505Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: ApplicationFiled: September 18, 2015Publication date: January 14, 2016Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Patent number: 9228273Abstract: Described are nonlinear optical (NLO) crystals, including aluminum-borate NLO crystals, that have low concentrations of contaminants that adversely affect the NLO crystal's optical properties, such as compounds that contain transition-metal elements and/or lanthanides, other than yttrium, lanthanum, and lutetium. Some NLO crystals with low concentrations of these contaminants are capable of second harmonic generation at very short wavelengths. Also described are embodiments of a method for making these NLO crystals. Some embodiments involve growing a single NLO crystal, such as an aluminum-borate NLO crystal, from a mixture containing a solvent that is substantially free of harmful contaminants. The described NLO crystals can be used, for example, in laser devices.Type: GrantFiled: November 21, 2011Date of Patent: January 5, 2016Assignee: State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon State UniversityInventors: Douglas A. Keszler, Ning Ye
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Patent number: 9176377Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: GrantFiled: August 5, 2010Date of Patent: November 3, 2015Assignee: Inpria CorporationInventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Patent number: 8969865Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.Type: GrantFiled: July 31, 2006Date of Patent: March 3, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Gregory Herman, David Punsalan, Randy Hoffman, Jeremy Anderson, Douglas Keszler, David Blessing
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Publication number: 20150056542Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.Type: ApplicationFiled: August 22, 2013Publication date: February 26, 2015Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy Anderson, Andrew Grenville
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Publication number: 20140302310Abstract: Nanolaminates comprised of alternating layers of amorphous, multi-component metallic films (AMMFs) and metal oxide films are disclosed as metamaterials whose physical properties can be engineered to customize the resulting electrical, average dielectric, and thermal properties. In certain configurations using AMMFs, the construct may be an optical or an electronic element, such a metal-insulator-metal (MIM) diode, for example.Type: ApplicationFiled: March 19, 2012Publication date: October 9, 2014Applicant: The State of Oregon Acting by and Through the State Board of Higher Education on Behalf of Or...Inventors: E. William Cowell, III, John F. Wager, Douglas A. Keszler, Nicholas A. Kuhta, Christopher C. Knutson